Mosfet Basics Slides
Mosfet Basics Slides
Mosfet Basics Slides
Structure of MOSFET
Operation of MOSFET
PMOS Transistor
CMOS Technology
1
Metal-Oxide-Semiconductor (MOS) Capacitor
I Qv
dV
v n
dx
dV ( x)
I D WCox VGS V ( x) VTH n
dx
I D nCox 2(VGS VTH )VDS VDS2
1 W
2 L
16
Parabolic ID-VDS Relationship
1
Ron
W
nCox VGS VTH
L
At small VDS, the transistor can be viewed as a resistor,
with the resistance depending on the gate voltage.
It finds application as an electronic switch.
19
Application of Electronic Switches
1 W
I D nCox VGS VTH 1 VDS
2
2 L
The original observation that the current is constant in the
saturation region is not quite correct. The end point of the
channel actually moves toward the source as V D increases,
increasing ID. Therefore, the current in the saturation region
is a weak function of the drain voltage.
25
and L
W W 2I D
g m n Cox VGS VTH g m 2 n Cox ID gm
L L VGS VTH
1
ro
I D
When the bias point is not perturbed significantly, small-
signal model can be used to facilitate calculations.
To represent channel-length modulation, an output
resistance is inserted into the model.
29