HAT2114R, HAT2114RJ: Silicon N Channel Power MOS FET High Speed Power Switching
HAT2114R, HAT2114RJ: Silicon N Channel Power MOS FET High Speed Power Switching
HAT2114R, HAT2114RJ: Silicon N Channel Power MOS FET High Speed Power Switching
Features
• Low on-resistance
• Capable of 4.5V gate drive
• High density mounting
• “J” is for Automotive application
High temperature D-S leakage guarantee
Avalanche rating
Outline
SOP-8
5
7 6
8
3 4
1 2
7 8 5 6
D D D D
2 4
G G
1, 3 Source
2, 4 Gate
S1 S3 5, 6, 7, 8 Drain
MOS1 MOS2
Ratings
Item Symbol HAT2114R HAT2114RJ Unit
Drain to source voltage VDSS 60 60 V
Gate to source voltage VGSS ±20 ±20 V
Drain current ID 6 6 A
Note1
Drain peak current ID (pulse) 48 48 A
Note4
Avalanche current IAP — 6 A
Note4
Avalanche energy EAR — 3.08 mJ
Note2
Channel dissipation Pch 2 2 W
Channel dissipation PchNote3 3 3 W
Channel temperature Tch 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
4. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Main Characteristics
(A)
3.0 PW 1m s
=1 s
3
0m
Drain Current ID
DC
Channel Dissipation
1 Op s
era
2.0 tio
2
0.3 n
Dr
(P
W No
ive
ive )
0.03 limited by RDS(on)
er
1.0 Op
at
er
ion
at 0.01 Ta = 25°C
ion
0.003 1 shot Pulse
1 Drive Operation
0.001
0 50 100 150 200 0.1 0.3 1 3 10 30 100
Case Temperature Ta (°C) Drain to Source Voltage VDS (V)
(A)
Drain Current ID
Drain Current ID
6 6
3V
4 4
Tc = 75°C 25°C
2 2
−25°C
VGS = 2.5 V
0 2 4 6 8 10 0 1 2 3 4 5
Drain to Source voltage VDS (V) Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance
Gate to Source Voltage vs. Drain Current
0.3 1.0
RDS(on) (Ω)
VDS(on) (V)
0.2 0.2
ID = 5 A 0.1
2A
10 V
1A 0.02
0 0.01
5 10 15 20 1 3 10 30 100
Gate to Source Voltage VGS (V) Drain Current ID (A)
Pulse Test
0.08 20
1, 2 ,5A
10 Tc = -25°C
0.06
25°C
VGS = 4.5 V 5
75°C
0.04
1, 2, 5 A 2
0.02
10 V 1 VDS = 10 V
0 Pulse Test
0.5
-40 0 40 80 120 160 0.1 0.3 1 3 10 30 100
Case Temperature Tc (°C) Drain Current ID (A)
Capacitance C (pF)
1000
200 Ciss
500
100 200
50 100 Coss
50
Crss
20 VGS = 0
20
f = 1 MHz
10 10
0.1 0.3 1 3 10 30 100 0 10 20 30 40 50
Reverse Drain Current IDR (A) Drain Source Voltage VDS (V)
VGS (V)
80 V = 50 V 16 300
Switching Time t (ns)
DD VGS
25 V
100
Drain to Source Voltage
10 V
Gate to Source Voltage
60 12 td(off)
V DS 30
tr
40 8 td(on)
10 tf
20 VDD = 50V 4
3 VGS = 10 V, VDD = 30 V
25V
10V PW = 5 µs, duty < 1 %
0 1
0 8 16 24 32 40 0.1 0.3 1 3 10 30 100
Gate Charge Qg (nc) Drain Current ID (A)
5V
8 1.6
VGS = 0, -5 V
4 0.8
0
0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150
Source Drain Voltage VSD (V) Channel Temperature Tch (°C)
90%
Vin Monitor Vout
Monitor
D.U.T. Vin 10%
Rg RL
Vout 10% 10%
Vin V DS
10 V = 30V 90% 90%
td(on) tr td(off) tf
D=1
1 0.5
0.2
0.1
0.1
0.05
0.02 θch-f(t) = γs (t) • θch - f
θch-f = 125°C/W, Ta = 25°C
0.01
0.01 When using the glass epoxy board
(FR4 40x40x1.6mm)
e
p uls
h ot PDM D=
PW
0.001 1s T
PW
T
0.0001
10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 10000
Pulse Width PW (S)
D=1
1
0.5
0.2
0.1
0.1
0.05
0.02 θch-f(t) = γs (t) • θch - f
θch-f = 166°C/W, Ta = 25°C
0.01
0.01 When using the glass epoxy board
(FR4 40x40x1.6mm)
lse PDM D=
PW
0.001 t pu T
ho
1s PW
T
0.0001
10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 10000
Pulse Width PW (S)
Package Dimensions
As of January, 2003
Unit: mm
4.90
5.3 Max
8 5
3.95
1 4
*0.22 ± 0.03
0.20 ± 0.03
1.75 Max
+ 0.10
6.10 – 0.30
0.75 Max
1.08
0˚ – 8˚
+ 0.11
0.14 – 0.04
+ 0.67
1.27 0.60 – 0.20
*0.42 ± 0.08
0.40 ± 0.06
0.15
0.25 M
Package Code FP-8DA
JEDEC Conforms
*Dimension including the plating thickness JEITA —
Base material dimension Mass (reference value) 0.085 g
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