Preliminary Datasheet

RJK0632JPD
60 V, 20 A Silicon N Channel MOS FET R07DS0342EJ0200
Rev.2.00
High Speed Power Switching Oct 16, 2014

Features
• For Automotive application
• AEC-Q101 compliant
• Low on-resistance : RDS(on) = 29 mΩ typ.
• Capable of 4.5 V gate drive
• Low input capacitance : Ciss = 440 pF typ.

Outline

RENESAS Package code: PRSS0004ZD-C

(Package name: DPAK (S))
4 2, 4
D

1. Gate
1 1G 2. Drain
2
3 3. Source
4. Drain

S
3

Absolute Maximum Ratings

(Ta = 25°C)
Item Symbol Value Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS ±20 V
Drain current ID 20 A
Drain peak current ID (pulse) Note1 80 A
Body-drain diode reverse drain current IDR 20 A
Body-drain diode reverse drain peak current IDR (pulse) Note1 80 A
Avalanche current IAP Note2 14 A
2
Avalanche energy EAR Note 16.8 mJ
Note3
Channel dissipation Pch 25 W
Channel temperature Tch Note4 175 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
4. AEC-Q101 compliant

Thermal Impedance Characteristics

• Channel to case thermal impedance θch-c: 6.00°C/W

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RJK0632JPD Preliminary

Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Gate to source leak current IGSS — — ±10 μA VGS = ±20 V, VDS = 0
Zero gate voltage drain current IDSS — — 1 μA VDS = 60 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V
Static drain to source on state RDS(on) — 29 35 mΩ ID = 10 A, VGS= 10 V Note5
resistance
Static drain to source on state RDS(on) — 41 55 mΩ ID = 10 A, VGS= 4.5 V Note5
resistance
Input capacitance Ciss — 440 — pF VDS = 10 V, VGS = 0
Output capacitance Coss — 135 — pF f = 1 MHz
Reverse transfer capacitance Crss — 85 — pF
Total gate charge Qg — 10 — nC VDD = 25 V, VGS = 10 V,
Gate to source charge Qgs — 1.4 — nC ID = 20 A
Gate to drain charge Qgd — 3.0 — nC
Turn-on delay time td(on) — 8.5 — ns ID= 10 A, RL = 3 Ω
Rise time tr — 12 — ns VGS = 10 V, RG = 4.7 Ω
Turn-off delay time td(off) — 40 — ns
Fall time tf — 11 — ns
Body-drain diode forward voltage VDF — 0.95 1.24 V IF = 20 A, VGS = 0 Note5
Body-drain diode reverse recovery trr — 30 — ns IF = 20 A, VGS = 0,
time diF/dt = 100 A/μs
Note: 5. Pulse test

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RJK0632JPD Preliminary

Main Characteristics

Power vs. Temperature Derating Maximum Safe Operation Area

50 1000
Tc = 25°C
Pch (W)

1 shot Pulse
40 100

Drain Current ID (A)

10
μs
10
Channel Dissipation

0
30 10

μs
1
m
s
20 1 Operation
in this area
is limited RDS(on)
PW = 10 ms
10 0.1

DC Operation
0.01
0 50 100 150 200 0.1 1 10 100

Case Temperature Tc (°C) Drain to Source Voltage VDS (V)

Typical Output Characteristics Typical Transfer Characteristics

20 100
10 V
5V 3.3 V
16 10
Drain Current ID (A)

Drain Current ID (A)

Tc = 175°C

12 1 25°C

8 VGS = 2.6 V 0.1 −40°C

4 0.01
Tc = 25°C VDS = 10 V
Pulse Test Pulse Test
0.001
0 5 10 0 1 2 3 4

Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)

Drain Source Saturation Voltage vs. Static Drain to Source State Resistance
Gate to Source Voltage vs. Drain Current
RDS(on) (mΩ)

RDS(on) (mΩ)
Static Drain to Source On State Resistance

Static Drain to Source On State Resistance

200 1000
ID = 10 A Tc = 25°C
Pulse Test Pulse Test
160

120
100
Tc = 175°C
80 VGS = 4.5 V

25°C
40 10 V

0 −40°C 10
0 4 8 12 16 20 1 10 100

Gate to Source Voltage VGS (V) Drain Current ID (A)

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RJK0632JPD Preliminary

Static Drain to Source on State Resistance Typical Capacitance vs.

vs. Temperature Drain to Source Voltage
Static Drain to Source On State Resistance
RDS(on) (mΩ)
100 10000
Pulse Test Tc = 25°C
ID = 10 A VGS = 0
80

Capacitance C (pF)
f = 1 MHz
VGS = 4.5 V
1000
60 Ciss

40
Coss
10 V 100

20 Crss

0 10
−50 0 50 100 150 200 0 5 10 15 20 25 30

Case Temperature Tc (°C) Drain to Source Voltage VDS (V)

Reverse Drain Current vs.

Dynamic Input Characteristics Source to Drain Voltage
50 20 20
Drain to Source Voltage VDS (V)

Gate to Source Voltage VGS (V)

Tc = 25°C VGS Tc = 25°C

ID = 10 A Reverse Drain Current IDR (A) 10 V Pulse Test
40 VDD = 25 V 16 16
10 V
5V
30 12 12
VDS

20 8 8
VGS = 0, −5 V

10 VDD = 25 V 4 4
10 V
5V
0
0 0 0.4 0.8 1.2 1.6 2.0
4 8 12 16 20

Gate Charge Qg (nC) Source to Drain Voltage VSD (V)

Avalanche Energy vs.

Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)

100
IAP = 14 A
VDD = 25 V
80 duty < 0.1 %
Rg ≥ 50 Ω

60

40

20

0
25 50 75 100 125 150 175

Channel Temperature Tch (°C)

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RJK0632JPD Preliminary

Normalized Transient Thermal Impedance γs (t)

Normalized Transient Thermal Impedance vs. Pulse Width
10

D=1
1
0.5

0.2
0.1 θch – c(t) = γs (t) • θch – c
0.1 0.05 θch – c = 6.00°C/W, Tc = 25°C
e
uls
tp PW
0.01 ho PDM D=
1s T
0.02 PW
T
0.01
10 μ 100 μ 1m 10 m 100 m 1 10

Pulse Width PW (s)

Avalanche Test Circuit Avalanche Waveform

VDSS
L 1
VDS EAR = L • IAP2 •
2 VDSS – VDD
Monitor
IAP
Monitor
V (BR)DSS
Rg D. U. T VDD IAP
VDS
Vin ID
50 Ω
15 V

VDD
0

Switching Time Test Circuit Switching Time Waveform

Vin Monitor Vout 90%

Monitor
D.U.T.
Rg RL Vin 10%

Vout 10% 10%

Vin VDS
10 V = 30 V
90% 90%

td(on) tr td(off) tf

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RJK0632JPD Preliminary

Package Dimensions
Package Name JEITA Package Code RENESAS Code Previous Code MASS[Typ.]
DPAK(S) SC-63 PRSS0004ZD-C DPAK(S) / DPAK(S)V 0.28g
Unit: mm

1.5 ± 0.5 6.5 ± 0.3 2.3 ± 0.2

5.6 ± 0.5 0.55 ± 0.1 (5.1)

(5.1)
5.5 ± 0.5
1.2 Max

0 – 0.25

(1.2)

0.55 ± 0.1
1.0 Max. 0.8 ± 0.1
2.5 ± 0.5

2.29 ± 0.5 2.29 ± 0.5

Ordering Information
Orderable Part Number Quantity Shipping Container
RJK0632JPD-00-J3 3000 pcs Taping (Sinistrorse)

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Oct 16, 2014
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