2SK2978

Silicon N Channel MOS FET

High Speed Power Switching
REJ03G1060-0500
(Previous: ADE-208-659C)
Rev.5.00
Sep.07,2005

Features
• Low on-resistance
RDS(on) = 0.09 Ω typ. (VGS = 4 V, ID = 1.5 A)
• Low drive current
• High speed switching
• 2.5 V gate drive devices.

Outline

RENESAS Package code: PLZZ0004CA-A

(Package name: UPAK R )
D
2 1 1. Gate
3 2. Drain
G 3. Source
4 4. Drain

S
Note: Marking is “ZY”
*UPAK is a trademark of Renesas Technology Corp.

Rev.5.00 Sep. 07, 2005 page 1 of 6

2SK2978

Absolute Maximum Ratings

(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 20 V
Gate to source voltage VGSS ±10 V
Drain current ID 2.5 A
Drain peak current ID(pulse)Note1 5 A
Body-drain diode reverse drain current IDR 2.5 A
Channel dissipation Pch Note2 1 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the alumina ceramic board (12.5 x 20 x 0.7 mm)

Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 20 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±10 — — V IG = ±100 µA, VDS = 0
Zero gate voltage drain current IDSS — — 10 µA VDS = 20 V, VGS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±8 V, VDS = 0
Gate to source cutoff voltage VGS(off) 0.5 — 1.5 V ID = 1 mA, VDS = 10 V
Static drain to source on state RDS(on) — 0.09 0.12 Ω ID = 1.5 A, VGS = 4 V Note3
resistance
Static drain to source on state RDS(on) — 0.12 0.20 Ω ID = 1.5 A, VGS = 2.5 V Note3
resistance
Forward transfer admittance |yfs| 3.0 5.0 — S ID = 1.5 A, VDS = 10 V Note3
Input capacitance Ciss — 260 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 150 — pF f = 1 MHz
Reverse transfer capacitance Crss — 75 — pF
Turn-on delay time td(on) — 15 — ns VGS = 4 V, ID = 1.5 A,
Rise time tr — 70 — ns RL = 6.67 Ω
Turn-off delay time td(off) — 55 — ns
Fall time tf — 70 — ns
Body–drain diode forward voltage VDF — 0.9 — V IF = 2.5 A, VGS = 0
Body–drain diode reverse trr — 75 — ns IF = 2.5 A, VGS = 0
recovery time diF/ dt = 50 A/ µs
Note: 3. Pulse test

Rev.5.00 Sep. 07, 2005 page 2 of 6

2SK2978

Main Characteristics

Power vs. Temperature Derating Maximum Safe Operation Area

2.0 10
Test condition (Note 5) :
Channel Dissipation Pch (W)

10
When using the alumina ceramic 3 µs

Drain Current ID (A)

10
board (12.5 x 20 x 0.7 mm)

PW
1.5

0 ms (1
µs
=
1
1

10
D

m
C

s
O
pe
1.0 0.3

sh
ra

o
tio
Operation in

t)
n
0.1 this area is

(N
ot
limited by RDS(on)

e
0.5

5)
0.03

Ta = 25°C
0.01
0 50 100 150 200 0.1 0.3 1 3 10 30 100

Ambient Temperature Ta (°C) Drain to Source Voltage VDS (V)

Typical Output Characteristics Typical Transfer Characteristics

10 V 5 V
5 5
3V Pulse Test VDS = 10 V
2.5 V Pulse Test
4 4
Drain Current ID (A)

Drain Current ID (A)

2V
3 3

2 2
75°C
25°C
1 1
VGS = 1.5 V Tc = –25°C

0 2 4 6 8 10 0 1 2 3 4 5

Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)

Drain to Source Saturation Voltage Static Drain to Source on State

vs. Gate to Source Voltage Resistance vs. Drain Current
Static Drain to Source on State Resistance
RDS (on) (Ω)

1 1
VDS (on) (V)
Drain to Source Saturation Voltage

Pulse Test Pulse Test

0.5
0.8

0.2
0.6 VGS = 2.5 V
0.1
ID = 5 A 4V
0.4
0.05

2.5 A
0.2
0.02
1.5 A
1A
0.01
0 2 4 6 8 10 0.1 0.2 0.5 1 2 5 10

Gate to Source Voltage VGS (V) Drain Current ID (A)

Rev.5.00 Sep. 07, 2005 page 3 of 6

2SK2978

Static Drain to Source on State Forward Transfer Admittance

Resistance vs. Temperature vs. Drain Current
Static Drain to Source on State Resistance
RDS (on) (Ω)

Forward Transfer Admittance yfs (S)

0.25 10
Pulse Test
5 Tc = –25°C
0.2
2.5 A 25°C
ID = 5 A 2
0.15
1
2.5 V 1A 75°C
0.1 5A
1, 2.5 A 0.5
VGS = 4 V
0.05
0.2 VDS = 10 V
Pulse Test
0 0.1
–40 0 40 80 120 160 0.1 0.2 0.5 1 2 5 10

Case Temperature TC (°C) Drain Current ID (A)

Body to Drain Diode Reverse Typical Capacitance

Recovery Time vs. Drain to Source Voltage

100 1000
Reverse Recovery Time trr (ns)

300 Ciss
Capacitance C (pF)

50 Coss
100
Crss
30

10
20

3
di / dt = 50 A / µs VGS = 0
VGS = 0, Ta = 25°C f = 1 MHz
10 1
0.1 0.2 0.5 1 2 5 10 0 5 10 15 20 25

Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V)

Dynamic Input Characteristics Switching Characteristics

50 20 1000
Drain to Source Voltage VDS (V)

VGS = 4 V, VDD = 10 V
Gate to Source Voltage VGS (V)

ID = 2.5 A
500 PW = 5 µs, duty < 1 %
Switching Time t (ns)

40 16

VGS 200
30 12 tr
VDD = 10 V
5V 100
tf
20 8
50
V DS td(off)

10 4
VDD = 10 V 20 td(on)
5V
0 10
0 4 8 12 16 20 0.1 0.2 0.5 1 2 5 10

Gate Charge Qg (nc) Drain Current ID (A)

Rev.5.00 Sep. 07, 2005 page 4 of 6

2SK2978

Reverse Drain Current vs.

Source to Drain Voltage
5

(A)
4V

Reverse Drain Current IDR

4
2.5 V

VGS = 0
2

Pulse Test
0 0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage VSD (V)

Switching Time Test Circuit Waveform

Vin Monitor Vout 90%

Monitor
D.U.T.
Vin 10%
RL
Vout 10% 10%
Vin VDD
50 Ω = 10 V
4V 90% 90%

td(on) tr td(off) tf

Rev.5.00 Sep. 07, 2005 page 5 of 6

2SK2978

Package Dimensions
JEITA Package Code RENESAS Code Package Name MASS[Typ.]
SC-62 PLZZ0004CA-A UPAK / UPAKV 0.050g
Unit: mm

4.5 ± 0.1
1.5 ± 0.1
1.8 Max 0.44 Max (1.5)

0.4
2.5 ± 0.1
φ1

4.25 Max

(2.5)
0.53 Max

(0.2)
(0.4)
0.48 Max 0.44 Max
0.8 Min

1.5 1.5
3.0

Ordering Information
Part Name Quantity Shipping Container
2SK2978ZYTL-E 1000 pcs Taping
2SK2978ZYTR-E 1000 pcs Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.

Rev.5.00 Sep. 07, 2005 page 6 of 6

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