Preliminary Datasheet

2SK4150
Silicon N Channel MOS FET REJ03G1909-0300
Rev.3.00
High Speed Power Switching May 27, 2010

Features
 Capable of 2.5 V gate drive
 Low drive current
 Low on-resistance
RDS(on) = 4.0  typ. (at ID = 0.2 A, VGS = 4 V, Ta = 25°C)

Outline

RENESAS Package code: PRSS0003DA-A

(Package name: TO-92(1))
D

1. Source
2. Drain
G 3. Gate

3
2
1

Absolute Maximum Ratings

(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 250 V
Gate to source voltage VGSS ±10 V
Drain current ID 0.4 A
Drain peak current ID (pulse)Note1 1.6 A
Body-drain diode reverse drain current IDR 0.4 A
Body-drain diode reverse drain peak current IDR (pulse)Note1 1.6 A
Channel dissipation Pch 0.75 W
Channel to ambient thermal impedance ch-a 166.7 C/W
Channel temperature Tch 150 C
Storage temperature Tstg –55 to +150 C
Notes: 1. PW  10 s, duty cycle  1%

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May 27, 2010
2SK4150 Preliminary

Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V(BR)DSS 250 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±10 — — V IG = 100 A, VDS = 0
Zero gate voltage drain current IDSS — — 1 A VDS = 250 V, VGS = 0
Gate to source leak current IGSS — — ±10 A VGS = 8 V, VDS = 0
Gate to source cutoff voltage VGS(off) 0.5 — 1.5 V VDS = 10 V, ID = 1 mA
Static drain to source on state RDS(on) — 4.0 5.7  ID = 0.2 A, VGS = 4 V Note2
resistance
Static drain to source on state RDS(on) — 4.1 5.9  ID = 0.2 A, VGS = 2.5 V Note2
resistance
Input capacitance Ciss — 80 — pF VDS = 25 V
Output capacitance Coss — 11.4 — pF VGS = 0
Reverse transfer capacitance Crss — 3.4 — pF f = 1 MHz
Turn-on delay time td(on) — 17 — ns ID = 0.2 A
Rise time tr — 14 — ns VGS = 4 V
Turn-off delay time td(off) — 38 — ns RL = 625 
Fall time tf — 36 — ns Rg = 10 
Total gate charge Qg — 3.7 — nC VDD = 200 V
Gate to source charge Qgs — 0.3 — nC VGS = 4 V
Gate to drain charge Qgd — 2.3 — nC ID = 0.4 A
Body-drain diode forward voltage VDF — 0.8 1.2 V IF = 0.4 A, VGS = 0 Note2
Body-drain diode reverse recovery time trr — 70 — ns IF = 0.4 A, VGS = 0
diF/dt = 100 A/s
Notes: 2. Pulse test
3. This device is sensitive to electrostatic discharge.
It is recommended to adopt appropriate cautions when handling this product.

REJ03G1909-0300 Rev.3.00 Page 2 of 6

May 27, 2010
2SK4150 Preliminary

Main Characteristics

Maximum Safe Operation Area Typical Output Characteristics

10 1.0
8 V, 2V
2.2 V
10 V
10
1 μs 0.8 2.5 V

Drain Current ID (A)

Drain Current ID (A)

PW
= 4V
10 1.8 V
0
0.1 μs 0.6

0.01 Operation in this 0.4

1.6 V
area is limited by
RDS(on)
0.001 0.2
VGS = 1.4 V
Ta = 25°C
1 shot Pulse Test Ta = 25°C
0.001
0.1 1 10 100 1000 0 4 8 12 16 20

Drain to Source Voltage VDS (V) Drain to Source Voltage VDS (V)

Static Drain to Source on State Resistance

Typical Transfer Characteristics vs. Drain Current (Typical)
1 100
Drain to Source on State Resistance
RDS(on) (Ω)
VDS = 10 V
Pulse Test
Drain Current ID (A)

0.1

10

VGS = 2.5 V
0.01
Tc = 75°C 4V
25°C
Ta = 25°C
−25°C Pulse Test
0.001 1
0 0.5 1.0 1.5 2.0 2.5 0.01 0.1 1 10

Gate to Source Voltage VGS (V) Drain Current ID (A)

Static Drain to Source on State Resistance Static Drain to Source on State Resistance
vs. Temperature (Typical) vs. Temperature (Typical)
Static Drain to Source on State Resistance

Static Drain to Source on State Resistance

RDS(on) (Ω)

RDS(on) (Ω)

20 20
VGS = 2.5 V VGS = 4 V
Pulse Test Pulse Test
16 16

12 0.4 A 12 0.4 A
ID = 0.8 A
ID = 0.8 A
8 8
0.2 A
0.2 A
4 4

0 0
−25 0 25 50 75 100 125 150 −25 0 25 50 75 100 125 150

Case Temperature Tc (°C) Case Temperature Tc (°C)

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May 27, 2010
2SK4150 Preliminary

Body-Drain Diode Reverse Typical Capacitance vs.

Recovery Time (Typical) Drain to Source Voltage
1000 1000
Reverse Recovery Time trr (ns)

Capacitance C (pF)
100 Ciss
100

10 Coss

10 Crss
1
VGS = 0
di / dt = 100 A / μs f = 1 MHz
VGS = 0, Ta = 25°C Ta = 25°C
1 0.1
0.1 1 10 0 50 100 150

Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V)

Reverse Drain Current vs.

Dynamic Input Characteristics (Typical) Source to Drain Voltage (Typical)
400 16 1.0
VDS (V)

VGS (V)

IDR (A)
ID = 0.4 A VGS = 0 V
Ta = 25°C Ta = 25°C
0.8 Pulse Test
300 12
VGS
Drain to Source Voltage

Gate to Source Voltage

Reverse Drain Current

VDD = 200 V 0.6

VDS 100 V
200 50 V 8
0.4

100 VDD = 200 V 4

100 V 0.2
50 V
0
0 4 8 12 16 20 0 0.4 0.8 1.2 1.6 2.0

Gate Charge Qg (nC) Source to Drain Voltage VSD (V)

Gate to Source Cutoff Voltage

vs. Case Temperature (Typical)
2.5
VDS = 10 V
Gate to Source Cutoff Voltage
VGS(off) (V)

2.0

1.5
1 mA 0.1 mA

1.0

ID = 10 mA
0.5

0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)

REJ03G1909-0300 Rev.3.00 Page 4 of 6

May 27, 2010
2SK4150 Preliminary

Normalized Transient Thermal Impedance vs. Pulse Width

3

Normalized Transient Thermal Impedance γ s (t)

1
D=1

0.5
0.3

0.2
θch – a(t) = γs (t) • θch – a
0.1 0.1 θch – a = 166.7°C/W, Ta = 25°C
0.05
PDM PW
0.02 D=
0.03
T
0.01 ulse PW
ot p
1sh T

0.01
10 μ 100 μ 1m 10 m 100 m 1 10 100 1000
Pulse Width PW (s)

Switching Time Test Circuit Waveform

Vin Monitor Vout

Monitor
90%
D.U.T.
RL
10 Ω Vin 10%

Vin VDD
Vout 10% 10%
4V = 125 V

90% 90%

td(on) tr td(off) tf

REJ03G1909-0300 Rev.3.00 Page 5 of 6

May 27, 2010
2SK4150 Preliminary

Package Dimensions
Package Name JEITA Package Code RENESAS Code Previous Code MASS[Typ.]
TO-92(1) SC-43A PRSS0003DA-A TO-92(1) / TO-92(1)V 0.25g Unit: mm

4.8 ± 0.3 3.8 ± 0.3

5.0 ± 0.2
2.3 Max
12.7 Min
0.60 Max
0.55 Max 0.7 0.5 Max

1.27
2.54

Ordering Information
Part No. Quantity Shipping Container
2SK4150TZ-E 2500 pcs Hold Box, Radial Taping
Note: Leads is forming applied as following figure.

Unit: mm

12.7
24.7 max.
19.0
16.0

9.0
18.0

2.5 2.5
6.35

12.7 4.0

REJ03G1909-0300 Rev.3.00 Page 6 of 6

May 27, 2010
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