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Silicon NPN Power Transistors

This document provides product specifications for the 2SC3679 silicon NPN power transistor. It includes maximum ratings, characteristics, switching times, and package outline. The transistor is in a TO-3PN package and is suitable for switching regulator and general purpose applications with a current rating of 5A and voltage rating of 800V. It has a DC current gain of 10-30 and transition frequency of 6MHz.

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Demóstenes Moraes Olinto
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© © All Rights Reserved
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32 views

Silicon NPN Power Transistors

This document provides product specifications for the 2SC3679 silicon NPN power transistor. It includes maximum ratings, characteristics, switching times, and package outline. The transistor is in a TO-3PN package and is suitable for switching regulator and general purpose applications with a current rating of 5A and voltage rating of 800V. It has a DC current gain of 10-30 and transition frequency of 6MHz.

Uploaded by

Demóstenes Moraes Olinto
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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JMnic Product Specification

Silicon NPN Power Transistors 2SC3679

DESCRIPTION
・With TO-3PN package
・High voltage switching transistor

APPLICATIONS
・For switching regulator and
general purpose applications

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter

Absolute maximum ratings (Ta=25℃)


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 900 V

VCEO Collector-emitter voltage Open base 800 V

VEBO Emitter-base voltage Open collector 7 V

IC Collector current (DC) 5 A

ICM Collector current -peak 10 A

IB Base current (DC) 2.5 A

PC Collector power dissipation TC=25℃ 100 W

Tj Junction temperature 150 ℃

Tstg Storage temperature -55~150 ℃


JMnic Product Specification

Silicon NPN Power Transistors 2SC3679

CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 800 V

VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 0.5 V

VBEsat Base-emitter saturation voltage IC=2A ;IB=0.4A 1.2 V

ICBO Collector cut-off current VCB=800V ;IE=0 0.1 mA

IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA

hFE DC current gain IC=2A ; VCE=4V 10 30

fT Transition frequency IC=0.5A ; VCE=12V 6 MHz

COB Collector output capacitance f=1MHz;VCB=10V 75 pF

Switching times

ton Turn-on time 1.0 μs

IC=2.0A
ts Storage time IB1=0.3A ,IB2=-1A 5.0 μs
VCC=250V, RL=125Ω

tf Fall time 1.0 μs

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JMnic Product Specification

Silicon NPN Power Transistors 2SC3679

PACKAGE OUTLINE

Fig.2 outline dimentions (unindicated tolerance:±0.10 mm)

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JMnic Product Specification

Silicon NPN Power Transistors 2SC3679

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