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Silicon NPN Power Transistors: Inchange Semiconductor Product Specification

This document provides product specifications for the 2SD1877 silicon NPN power transistor from Inchange Semiconductor. The transistor is in a TO-3PML package and is suitable for use in color TV and display horizontal deflection output applications due to its high speed, high breakdown voltage, and built-in damper diode characteristics. Key specifications include an 800V collector-emitter sustaining voltage, 5V collector-emitter saturation voltage, 1.5V base-emitter saturation voltage, 10uA collector cut-off current, 0.1-0.3us fall time, and 50W maximum collector power dissipation. Dimensional outlines for the TO-3PML package are also provided.

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41 views

Silicon NPN Power Transistors: Inchange Semiconductor Product Specification

This document provides product specifications for the 2SD1877 silicon NPN power transistor from Inchange Semiconductor. The transistor is in a TO-3PML package and is suitable for use in color TV and display horizontal deflection output applications due to its high speed, high breakdown voltage, and built-in damper diode characteristics. Key specifications include an 800V collector-emitter sustaining voltage, 5V collector-emitter saturation voltage, 1.5V base-emitter saturation voltage, 10uA collector cut-off current, 0.1-0.3us fall time, and 50W maximum collector power dissipation. Dimensional outlines for the TO-3PML package are also provided.

Uploaded by

LoengrinMontilla
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1877

DESCRIPTION ·
·With TO-3PML package
·High speed
·High breakdown voltage
·High reliability
·Buitl-in damper diode

APPLICATIONS
·Color TV horizontal deflection output
·Color display horizontal deflection output

PINNING

PIN DESCRIPTION

1 Base

2 Collector
Fig.1 simplified outline (TO-3PML) and symbol
3 Emitter

Absolute maximum ratings(Tc=25℃)


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 1500 V

VCEO Collector-emitter voltage Open base 800 V

VEBO Emitter-base voltage Open collector 6 V

IC Collector current 4 A

ICM Collector current-peak 12 A

PC Collector power dissipation 50 W

Tj Junction temperature 150 ℃

Tstg Storage temperature -55~150 ℃

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Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1877

CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 800 V

VCEsat Collector-emitter saturation voltage IC=2.5A;IB=0.8A 5 V

VBEsat Base-emitter saturation voltage IC=2.5A;IB=0.8A 1.5 V

ICBO Collector cut-off current VCB=800V; IE=0 10 μA

ICES Collector cut-off current VCB=1500V; RBE=0 1.0 mA

IEBO Emitter cut-off current VEB=4V; IC=0 40 130 mA

hFE-1 DC current gain IC=0.5A ; VCE=5V 8

hFE-2 DC current gain IC=2.5A ; VCE=5V 3.5 7

VF Diode forward voltage IEC=4A 2.0 V

IC=3A;RL=50Ω
tf Fall time 0.1 0.3 μs
IB1=0.8A;IB2=-1.6A;VCC=200V

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Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1877

PACKAGE OUTLINE

Fig.2 Outline dimensions

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Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1877

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