STD95N2LH5

STP95N2LH5, STU95N2LH5
N-channel 25 V, 0.0038 Ω, 80 A, DPAK, IPAK, TO-220
STripFET™ V Power MOSFET

Features
Type VDSS RDS(on) max ID
3
STD95N2LH5 25 V < 0.0045 Ω 80 A 1 3
2
STP95N2LH5 25 V < 0.0049 Ω 80 A 1
DPAK
STU95N2LH5 25 V < 0.0049 Ω 80 A IPAK
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
3
■ High avalanche ruggedness 2
1
■ Low gate drive power losses TO-220

Application
■ Switching applications
Figure 1. Internal schematic diagram

Description
$4!"OR
This STripFET™V Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
FOM (figure of merit). '

3

!-V

Table 1. Device summary

Order codes Marking Package Packaging

STD95N2LH5 95N2LH5 DPAK Tape and reel

STP95N2LH5 95N2LH5 TO-220 Tube
STU95N2LH5 95N2LH5 IPAK Tube

April 2010 Doc ID 13834 Rev 5 1/17

www.st.com 17
Contents STD95N2LH5, STP95N2LH5, STU95N2LH5

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6

3 Test circuits .............................................. 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

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STD95N2LH5, STP95N2LH5, STU95N2LH5 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Value
Symbol Parameter Unit
DPAK/IPAK TO-220

VDS Drain-source voltage (VGS=0) 25 V

VGS Gate-Source voltage ± 22 V
ID (1) Drain current (continuous) at TC = 25°C 80 95 A
ID Drain current (continuous) at TC = 100°C 67 A
(2)
IDM Drain current (pulsed) 320 380 A
PTOT Total dissipation at TC = 25°C 70 80 W
Derating factor 0.47 W/°C
(3)
EAS Single pulse avalanche energy 165 mJ
Tj Operating junction temperature
-55 to 175 °C
Tstg Storage temperature
1. Limited by wire bonding
2. Pulse width limited by safe operating area
3. Starting Tj = 25°C, Id = 40 A, Vdd = 20 V

Table 3. Thermal resistance

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case max 2.14 °C/W

Rthj-amb Thermal resistance junction-case max 100 °C/W
Tj Maximum lead temperature for soldering purpose 275 °C

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Electrical characteristics STD95N2LH5, STP95N2LH5, STU95N2LH5

2 Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Table 4. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source breakdown
V(BR)DSS ID = 250 µA, VGS= 0 25 V
Voltage

Zero gate voltage drain VDS = 25 V 1 µA

IDSS
current (VGS = 0) VDS = 25 V,Tc = 125°C 10 µA
Gate body leakage current
IGSS VGS = ± 22 V ±100 nA
(VDS = 0)
VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 1 V
VGS= 10 V, ID= 40 A
0.0038 0.0045 Ω
SMD version

Static drain-source on VGS= 10 V, ID= 40 A 0.0044 0.0049 Ω

RDS(on)
resistance VGS= 5 V, ID= 40 A
0.005 0.006 Ω
SMD version
VGS= 5 V, ID= 40 A 0.006 0.007 Ω

Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

Input capacitance
Ciss 1817 pF
Output capacitance VDS =25 V, f=1 MHz,
Coss - 420 - pF
Reverse transfer VGS=0
Crss 67 pF
capacitance
Qg Total gate charge VDD=13 V, ID = 80 A 13.4 nC
Qgs Gate-source charge VGS =5 V - 6.7 - nC
Qgd Gate-drain charge Figure 18 4.1 nC
Pre Vth gate-to-source
Qgs1 3.5 nC
charge VDD=13 V, ID = 80 A
- -
Post Vth gate-to-source Figure 21
Qgs2 3.2 nC
charge
f=1 MHz gate bias
Bias= 0 test signal
RG Gate input resistance - 1.1 - Ω
level=20 mV
open drain

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STD95N2LH5, STP95N2LH5, STU95N2LH5 Electrical characteristics

Table 6. Switching on/off (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

VDD=12.5 V, ID= 40 A,
td(on) Turn-on delay time 7 ns
RG= 4.7 Ω, VGS= 10 V - -
tr Rise time 38 ns
Figure 17
VDD=12.5 V, ID= 40 A,
td(off) Turn-off delay time 22 ns
RG= 4.7 Ω, VGS= 10 V - -
tf Fall time 7 ns
Figure 17

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current 80 A

(1) -
ISDM Source-drain current (pulsed) 320 A
VSD(2) Forward on voltage ISD= 35 A, VGS=0 - 1.1 V
trr Reverse recovery time ISD = 80 A, VDD= 20 V 32.4 ns
Qrr Reverse recovery charge di/dt =100 A/µs, - 27.1 nC
IRRM Reverse recovery current Figure 19 1.7 A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

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Electrical characteristics STD95N2LH5, STP95N2LH5, STU95N2LH5

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for DPAK, IPAK Figure 3. Thermal impedance for DPAK, IPAK

Figure 4. Safe operating area for TO-220 Figure 5. Thermal impedance for TO-220
AM04907v1
ID
(A)
is
a
R re

n)
(o
a
S
ax s
D
m thi

100µs
by in

100
d n
ite tio
m ra
Li pe
O

1ms

10 10ms

Tj=150°C
1
Tc=25°C
Sinlge
pulse
0.1
0.1 1 10 100 VDS(V)

Figure 6. Output characteristics Figure 7. Transfer characteristics

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STD95N2LH5, STP95N2LH5, STU95N2LH5 Electrical characteristics

Figure 8. Normalized BVDSS vs temperature Figure 9. Static drain-source on resistance

Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations

Figure 12. Normalized gate threshold voltage Figure 13. Normalized on resistance vs
vs temperature temperature

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Electrical characteristics STD95N2LH5, STP95N2LH5, STU95N2LH5

Figure 14. Source-drain diode forward

characteristics

8/17 Doc ID 13834 Rev 5

STD95N2LH5, STP95N2LH5, STU95N2LH5 Test circuits

3 Test circuits

Figure 15. Unclamped inductive load test Figure 16. Unclamped inductive waveform
circuit

Figure 17. Switching times test circuit for Figure 18. Gate charge test circuit
resistive load

Figure 19. Test circuit for inductive load Figure 20. Switching time waveform
switching and diode recovery times

Doc ID 13834 Rev 5 9/17

Test circuits STD95N2LH5, STP95N2LH5, STU95N2LH5

Figure 21. Gate charge waveform

Id
Vds

Vgs

Vgs(th)

Qgs1 Qgs2 Qgd

10/17 Doc ID 13834 Rev 5

STD95N2LH5, STP95N2LH5, STU95N2LH5 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.

Doc ID 13834 Rev 5 11/17

Package mechanical data STD95N2LH5, STP95N2LH5, STU95N2LH5

TO-220 type A mechanical data

mm
Dim
Min Typ Max
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13 14
L1 3.50 3.93
L20 16.40
L30 28.90
∅P 3.75 3.85
Q 2.65 2.95

0015988_Rev_S

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STD95N2LH5, STP95N2LH5, STU95N2LH5 Package mechanical data

TO-251 (IPAK) mechanical data

mm.
DIM.
min. typ max.
A 2.20 2.40
A1 0.90 1.10
b 0.64 0.90
b2 0.95
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
E 6.40 6.60
e 2.28
e1 4.40 4.60
H 16.10
L 9.00 9.40
(L1) 0.80 1.20
L2 0.80
V1 10 o

0068771_H

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Package mechanical data STD95N2LH5, STP95N2LH5, STU95N2LH5

TO-252 (DPAK) mechanical data

mm.
DIM.
min. ty p ma x .
A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
b 0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
D1 5.10
E 6.40 6.60
E1 4. 70
e 2.28
e1 4.40 4.60
H 9.35 10.10
L 1
L1 2.80
L2 0.80
L4 0.60 1
R 0.20
V2 0o 8o

0068772_G

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STD95N2LH5, STP95N2LH5, STU95N2LH5 Packaging mechanical data

5 Packaging mechanical data

DPAK FOOTPRINT

All dimensions are in millimeters

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA

mm inch
DIM.
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881

BASE QTY BULK QTY

TAPE MECHANICAL DATA
2500 2500
mm inch
DIM.
MIN. MAX. MIN. MAX.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D 1.5 1.6 0.059 0.063
D1 1.5 0.059
E 1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R 40 1.574
W 15.7 16.3 0.618 0.641

Doc ID 13834 Rev 5 15/17

Revision history STD95N2LH5, STP95N2LH5, STU95N2LH5

6 Revision history

Table 8. Document revision history

29-

Date Revision Changes

16-Oct-2007 1 First release

20-Feb-2008 2 Modified Table 4.: Static
23-Sep-2008 3 VGS value has been changed on Table 2 and Table 5
20-Apr-2009 4 Added device in TO-220
– Table 1: Device summary has been corrected
26-Apr-2010 5
– Section 4: Package mechanical data has been updated

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STD95N2LH5, STP95N2LH5, STU95N2LH5

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Doc ID 13834 Rev 5 17/17