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    AP Lab 04

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    muhammad arslan
    This document describes an experiment to plot the characteristic curves of a PN junction diode in forward and reverse bias. The experiment involves connecting a silicon diode to a regulated power supply and resistor to apply forward and reverse bias. Current and voltage readings are recorded at increasing voltage levels and plotted on graphs to observe the diode's conducting and non-conducting states under forward and reverse bias conditions.

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    Download as DOCX, PDF, TXT or read online from Scribd

    AP Lab 04

    Uploaded by

    muhammad arslan
    22 views4 pages
    This document describes an experiment to plot the characteristic curves of a PN junction diode in forward and reverse bias. The experiment involves connecting a silicon diode to a regulated power supply and resistor to apply forward and reverse bias. Current and voltage readings are recorded at increasing voltage levels and plotted on graphs to observe the diode's conducting and non-conducting states under forward and reverse bias conditions.

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    AP_Lab_04

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    This document describes an experiment to plot the characteristic curves of a PN junction diode in forward and reverse bias. The experiment involves connecting a silicon diode to a regulated power supply and resistor to apply forward and reverse bias. Current and voltage readings are recorded at increasing voltage levels and plotted on graphs to observe the diode's conducting and non-conducting states under forward and reverse bias conditions.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    22 views4 pages

    AP Lab 04

    Uploaded by

    muhammad arslan
    This document describes an experiment to plot the characteristic curves of a PN junction diode in forward and reverse bias. The experiment involves connecting a silicon diode to a regulated power supply and resistor to apply forward and reverse bias. Current and voltage readings are recorded at increasing voltage levels and plotted on graphs to observe the diode's conducting and non-conducting states under forward and reverse bias conditions.

    Copyright:

    © All Rights Reserved
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    Download as docx, pdf, or txt
    of 4

    Experiment No: 4

    P-N JUNCTION DIODE CHARACTERISTICS


    Object: To plot the characteristics curve of PN junction diode in Forward & Reverse bias.

    Required components:
     Diodes IN 4007(Si) (1)
     Resistor 1K (1)
     Bread Board
     Regulated Power Supply 0-30V - DC
     Digital Ammeter -200A/20mA
     Digital Voltmeter 0-2V/20V DC
     Connecting Wires

    Theory:
    This is a two terminal device consisting of a P-N junction formed either in Ge or Si crystal. A P-
    N junction is illustrated in fig. shows P-type and N-type semiconductor pieces before they are
    joined. P-type material has a high concentration of holes and N-type material has a high
    concentration of free electrons and hence there is a tendency of holes to diffuse over to N side
    and electrons to Pside. The process is known as diffusion.
    The V-I characteristics of the diode are curve between voltage across the diode and current
    through the diode. When external voltage is zero, circuit is open and the potential barrier does
    not allow the current to flow. Therefore, the circuit current is zero. When P-type (Anode is
    connected to +ve terminal and n- type (cathode) is connected to –ve terminal of the supply
    voltage, is known as forward bias. The potential barrier is reduced when diode is in the forward
    biased condition. At some forward voltage, the potential barrier altogether eliminated and current
    starts flowing through the diode and also in the circuit. The diode is said to be in ON state. The
    current increases with increasing forward voltage. When N-type (cathode) is connected to +ve
    terminal and P-type (Anode) is con nected –ve terminal of the supply voltage is known as reverse
    bias and the potential barrier across the junction increases. Therefore, the junction resistance
    becomes very high and a very small current (reverse saturation current) flows in the circuit. The
    diode is said to be in OFF state. The reverse bias current is due to minority charge carriers. The
    p-n junction diode conducts only in one direction.

    Forward biased condition:

    PROCEDURE:
    Forward bias characteristics

    1. Connect the circuit diagram as shown in figure for Forward bias using silicon diode.

    2. Now vary RPS supply voltage Vs in steps from 0V onwards (0.1V, 0.2V……1V) note down
    the forward current (If) through the diode for different Forward voltages (Vf) across the diode
    without exceeding the rated value (If Max=20mA)

    3. Tabulate the results in the tabular form.

    4. Plot the graph between Vf & If.

    S.No APPLIED VOLTAGE ACROSS CURRENT THROUGH


    VOLTAGE (V) DIODE (V) DIODE(mA)

    Reverse biased condition:

    1. Connect the circuit diagram as shown in figure for Reverse bias using silicon diode.

    2. Now vary RPS supply voltage Vs in steps from 0V onwards (1V,2V……10V) note down the
    forward current (Ir) through the diode for different Reverse voltages (Vr) across the diode
    without exceeding the rated value (Vr Max=15V)

    3. Tabulate the results in the tabular form.

    4. Plot the graph between Vr & Ir.


    S.No APPLIED VOLTAGE ACROSS CURRENT THROUGH
    VOLTAGE (V) DIODE (V) DIODE(mA)

    Conclusion:

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