Switching Loss Calculation Fairchild
Switching Loss Calculation Fairchild
Switching Loss Calculation Fairchild
DieTemp function
Tabs
Definitions
EfficiencyChart
LossChart
ControllerDriver
MOSFETDatabase
EfficiencySummary
Output
RDS(ON) is a function of die temperature, and the die temperature is a function of Power Dissipation which is in
turn dependent on RDS(ON). To solve for dissipation or die temperature, the conduction loss calculations in this
spreadsheet use an iterative calculation method to arrive at the die temperature and dissipation.
Function / Description
Provides guidance on what MOSFET parametric data to enter in the "MOSFETDatabase" tab. This sheet is a
hotlink destination from some of the column headings in the MOSFETDatabase table.
Plots efficiency data from the table in EfficiencySummary tab.
Plots power loss data from the table in EfficiencySummary tab.
Database for the IC Controllers. Fairchild's portable PWM controllers are featured in this database. Any
controller can be added by using the "Add" button and filling in the appropriate fields.
Database for the MOSFETs. Many popular Fairchild MOSFETs are featured in this database. Any MOSFET can
be added by using the "Add" button and filling in the appropriate fields.
The main sheet where the system requirements and MOSFET choices can be entered, and the data is stored for
graphing. To run the graphing routine, push the "RUN" button at the top of the sheet.
The calculations contained in the "Synchronous buck MOSFET loss calculations" app note are programmed into
this sheet. The EfficiencySummary macro uses this sheet as its calculator. If a particular operating point needs
to be examined in more detail, then use this sheet, and enter the parameters by hand. Be sure to save a copy of
this workbook before overwriting formulas in "Output" tab.
QG(SW) can be taken from the graph as the difference between the end of the flat portion (about
8nC in the example to the right) and the QG value at VTH (about 2.5nC on this graph). If the graph
is not available, a good estimate is QGD + 0.5*QGS.
CISS is used for low-side MOSFET switching loss calculations. The VDS of the low side MOSFET
is at 0 when the MOSFET is switching. Therefore, use the value at which the CISS curve crosses 0,
which is typically about 1.4x the datasheet typical value. CRSS is used to calculate the low-side
"gate step" which is caused by the SW node rise injecting charge through CGD. Use datasheet
value.
10
VGS, GATE-SOURCE VOLTAGE (V)
ID = 10A VDS = 5V
10V
8
15V
Q G (S W )
4
VSP
2
V TH
0
0 4 8 12 16 20 24
Qg, GATE CHARGE (nC)
1600
U s e this fo r C IS S
f = 1MHz
VGS = 0 V
CISS
1200
CAPACITANCE (pF)
800
COSS
400
CRSS
0
0 5 10 15 20 25 30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Efficiency for 1.4V Output @ F=200KHz
100%
95%
Efficiency
90%
Vin =10
85% Vin =12
Vin =14
80%
75%
70%
0 5 10 15 20 25 30
Output Current
Total Losses for 1.4V Output @ F=200KHz
4.0
Power Loss (W)
3.5
3.0
2.5
2.0
Vin =14
1.5
Vin =12
Vin =10
1.0
0.5
0.0
0 5 10 15 20 25 30
Output Current
High-Side Low-Side High-Side Pull-up High-Side Pull-down Low-Side Pull-up
Part # VDRIVE VDRIVE Resistance Resistance Resistance
FAN5009 12 12 4 1.2 4
FAN5068 4.8 5 1.8 1.8 1.8
FAN5069 4.8 5 1.8 1.8 1.8
FAN5078 4.8 5 1.8 1.8 1.8
FAN5230 4.8 5 7 4 6
FAN5233 4.8 5 7 4 6
FAN5234 4.8 5 8 3.2 8
FAN5235 4.8 5 7 4 6
FAN5236 4.8 5 12 2.4 12
FAN5240 4.8 5 3.8 1.6 3.8
FAN5250 4.8 5 3.8 1.6 3.8
FAN6520A 4.8 5 2.5 2 2.5
Controller
Adaptive Quiescent
Low-Side Pull-down Dead-time Dead Dead Power
Resistance Threshold Time L-H Time H-L (mW) Theta J-A
1.2 1 40 20 60 140
1.2 1 25 10 75 38
1.2 1 25 10 16 100
1.2 1 25 10 75 38
5 1 25 20 7 88
5 1 25 20 7 88
1.5 1 25 20 4.25 110
5 1 25 20 7 88
1.2 1 25 20 10 88
0.8 1 38 20 10 88
0.8 1 25 20 5 88
1 1 25 10 15 140
Unless otherwise noted in comment (hover mouse over column heading to read comment), use typical parameter from data sh
Blue column headings have further explanation in the "Definitions" tab. Click on the heading to read explanation.
Grey fields are calculated fields for reference only (not used for loss calculations)
Part # RDS(ON)4.5 RDS(ON)10 Delta RG VSP VTH CISS0 CISS CRSS COSS QGS
FDB6670AL 6.7 5 34% 1.3 2.5 1.5 4,000 4,000 250 820 9.0
FDD6296 9 7.5 20% 1.3 2.6 1.7 1,700 1,440 140 400 4.0
FDD8880 9 7 29% 2.3 2.6 1.7 1,700 1,260 150 260 3.8
FDD8896 5.7 4.7 21% 2.1 2.6 1.7 3,200 2,525 300 490 6.9
FDB6676 4.5 4.3 5% 1.2 2.6 1.5 6,634 6,634 900 836 13.0
FDB6676S 6 5.5 9% 1.2 2.6 1.5 6,065 6,065 850 826 10.0
FDB6688 4.6 3.5 31% 1.2 3.5 2 5,000 5,000 1,500 1,400 11.0
FDB7030BL 10 7.3 37% 1.3 2.6 1.5 3,000 3,000 188 500 7.0
FDC6401N 55 45 22% 2 2 1.2 400 400 25 82 1.0
FDC645N 25 23 9% 1.5 2.25 1.4 2,000 1,460 96 227 3.6
FDC6561AN 113 82 38% 2 3 1 300 300 19 100 0.7
FDD3706 8 7.5 7% 1.5 1.8 0.9 2,300 1,880 430 201 3.7
FDD6512A 16 2 1.8 0.9 1,500 1,500 94 277 2.0
FDD6530A 26 2 1.8 0.9 1,000 1,000 63 180 1.3
FDD6644 7.5 6.5 15% 1.3 2.5 1.5 3,500 3,087 185 600 7.5
FDD6680A 10 8 25% 1.5 2.5 1.6 3,000 3,000 188 500 7.0
FDD6696 8.6 6.5 32% 1.5 3 2 2,200 1,715 180 410 5.0
FDS6612A 26 19 37% 1.2 2.8 1.6 1,200 1,200 75 185 2.8
FDS6678A 20 18 11% 1.2 2.4 1.4 1,800 1,800 113 227 3.6
FDS6690A 13 10 30% 1.2 2.8 1.6 2,000 2,000 125 350 5.0
FDS6692 11.1 10 11% 1.5 2.5 1.5 2,800 2,164 138 357 5.0
FDS6694 11.1 9.1 22% 1.25 3 2 1,500 1,500 94 342 4.0
FDS6812A 17 16 6% 1.2 1.8 0.8 1,700 1,700 106 277 2.0
FDS6986SQ1 34 28 21% 1.8 2.7 1.6 900 900 56 200 2.5
FDS6986SQ2 23 18 28% 1.8 3.5 2.4 1,500 1,233 106 344 5.0
FDS7064N 6.2 5.6 11% 1.4 1.8 1.2 4,000 3,500 250 520 6.7
FDS7064SN3 7.8 7.0 11% 1.4 2.1 1.4 3,528 3,040 192 529 6.4
FDS7066SN3 5 4.5 11% 1.4 2.1 1.4 5,500 4,740 300 825 10.0
FDS7096N3 9.5 7.5 27% 1.4 1.8 1.2 2,000 1,587 385 154 5.0
FDS7764A 6 5.3 13% 1.25 1.8 1.2 4,000 3,500 250 520 6.7
FDS7764S 7 6 17% 1.5 2.1 1.5 3,200 2,800 195 530 6.0
FDZ7064S 6.5 5.5 18% 1.5 2.1 1.5 3,200 2,800 195 530 6.0
FDS9926A 15 0.75 1.5 1 0
FDZ2551N 7.5 0.75 1.75 0.9 1,500 1,500 94 268 2.0
FDZ2553N 5.5 0.75 1.65 0.9 0
FQD60N03L 17 11 55% 2.5 3.7 1.75 0
ISL9N312AD3 17 10 70% 3 3.1 2 1,800 1,800 113 300 4.3
cal parameter from data sheet.
ead explanation.
Driver Parameters
High-Side VDRIVE 4.80 V These parameters come from "Efficiency Summary" sheet
Low-Side VDRIVE 5.00 V
High-Side Pull-up Resistance 1.80 W p CH
High-Side Pull-down Resistance 1.80 W N-CH
Low-Side Pull-up Resistance 1.80 W p CH
Low-Side Pull-down Resistance 1.20 W N-CH
High-Side Damping Resistor 0.0 W These parameters come from "Efficiency Summary" sheet
Low-Side Damping Resistor 0.0 W
Adaptive Dead-time Threshold 1.0 V
Dead Time L-H 25.0 nS
Dead Time H-L 10.0 nS
Driver Theta J-A 100.0 °C/W
Controller quiescent power 16.0 mW
VGS When at adapt Threshold 1.88 V
VGS When HDRV starts 0.330 V Shoot-thru pedestal
Peak gate step 1.07 V Shoot-thru step peak
Max TA 50 °C
High-Side qJA 40 °C/W HS Die Temp ### HS RDS(ON)
Low-side
Low-Side qJA 40 °C/W Low-side Die Temp ### RDS(ON)
MOSFET RDS(ON) Tempco 0.40% /°C
Output
IGATE L-H IGATE H-L TSW L-H TSW H-L Capacitance
(A) (A) (nS) (nS) PSW Loss
High-Side 0.91 0.55 6 9 0.513 0.014
Low-Side See calculation below 0.061
Note: Gate drive losses appear below under controller losses
y capacitance = 0
Driver Dissipation
Driver qJA 88.00 °C/W
Driver TJ 53.22 °C
QG(TOTAL)10 DiodeQRR
30 18
46 14