Tps 54540
Tps 54540
TPS54540
SLVSBX7B – MAY 2013 – REVISED MARCH 2017
VOUT 90
EN SW
Efficiency (%)
85
COMP 12 V to 3.3 V
80
12 V to 5 V
RT/CLK 75
FB
70
GND
65 VOUT = 12 V, fsw = 800 kHz
VOUT = 5 V and 3.3 V, fsw = 400 kHz
Copyright © 2017, Texas Instruments Incorporated 60
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
IO - Output Current (A) C024
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS54540
SLVSBX7B – MAY 2013 – REVISED MARCH 2017 www.ti.com
Table of Contents
1 Features .................................................................. 1 7.4 Device Functional Modes........................................ 23
2 Applications ........................................................... 1 8 Application and Implementation ........................ 25
3 Description ............................................................. 1 8.1 Application Information............................................ 25
4 Revision History..................................................... 2 8.2 Typical Application .................................................. 25
5 Pin Configuration and Functions ......................... 4 9 Power Supply Recommendations...................... 36
6 Specifications......................................................... 5 10 Layout................................................................... 37
6.1 Absolute Maximum Ratings ...................................... 5 10.1 Safe Operating Area ............................................. 37
6.2 ESD Ratings.............................................................. 5 10.2 Layout Guidelines ................................................. 38
6.3 Recommended Operating Conditions....................... 5 10.3 Layout Example .................................................... 38
6.4 Thermal Information .................................................. 5 11 Device and Documentation Support ................. 39
6.5 Electrical Characteristics........................................... 6 11.1 Custom Design with WEBENCH® Tools .............. 39
6.6 Timing Requirements ................................................ 7 11.2 Receiving Notification of Documentation Updates 39
6.7 Typical Characteristics .............................................. 7 11.3 Community Resources.......................................... 39
7 Detailed Description ............................................ 11 11.4 Trademarks ........................................................... 39
7.1 Overview ................................................................. 11 11.5 Electrostatic Discharge Caution ............................ 39
7.2 Functional Block Diagram ....................................... 12 11.6 Glossary ................................................................ 39
7.3 Feature Description................................................. 12 12 Mechanical, Packaging, and Orderable
Information ........................................................... 39
4 Revision History
Changes from Revision A (March 2014) to Revision B Page
• Added the WEBENCH information in the Features, Detailed Design Procedure, and Device Support sections .................. 1
• Changed the Handling Ratings table To ESD Ratings table.................................................................................................. 5
• Changed VIN MIN Value From: 4.5 V To: VO + VDO, and added Note 1 in the Recommended Operating Conditions .......... 5
• Deleted last graph: "5 V Start and Stop Voltage" from the Typical Characteristics ............................................................. 10
• Updated text and added Equation 1 in the Low Dropout Operation and Bootstrap Voltage (BOOT) ................................. 13
• Deleted text: "The start and stop voltage for a typical 5 V..." from the Low Dropout Operation and Bootstrap Voltage
(BOOT) section..................................................................................................................................................................... 13
• Changed Equation 7 and Equation 8. ................................................................................................................................. 15
• Changed Equation 27 .......................................................................................................................................................... 26
• Added new section: Minimum VIN ......................................................................................................................................... 31
• Deleted 2 graphs named "Low Dropout Operation" from the Application Curves section .................................................. 33
• Added Device Information table, Recommended Operating Conditions table, Pin Configuration and Functions
section, Handling Ratings table, Feature Description section, Device Functional Modes, Application and
Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation
Support section, and Mechanical, Packaging, and Orderable Information section................................................................ 1
• Changed the Electrical Characteristics Conditions From: VIN = 4.5 to 60 V To: VIN = 4.5 to 42 V...................................... 6
• Changed the Operating: nonswitching supply current TEST CONDITIONS From: FB = 0.83 V To: FB = 0.9 V .................. 6
• Changed RT/CLK high threshold MAX value From: 1.7 V To: 2 V ....................................................................................... 6
• Changed the title of graph "5 V Start and Stop Voltage" to include a link to the Low Dropout Operation section. ............ 10
• Changed the FBD, removed the Logic block and Shutdown signal from the OV comparator ............................................. 12
• Changed VF = Forward Drop of the Catch Diode To: VD = Forward Drop of the Catch Diode .......................................... 14
• Deleted value TSW = 1 / Fsw from the list following Equation 2 ......................................................................................... 14
• Changed VB2SW = VBOOT + VF To: VB2SW = VBOOT + VD ........................................................................................... 14
• Changed VBOOT = (1.41 x VIN - 0.554 - VF / TSW - 1.847 x 103 x IB2SW) / (1.41 + 1 / Tsw) To: VBOOT = (1.41 x
BOOT 1 8 SW
VIN 2 7 GND
PowerPAD
9
EN 3 6 COMP
RT/CLK 4 5 FB
Pin Functions
TERMINAL
I/O DESCRIPTION
NAME NO.
A bootstrap capacitor is required between BOOT and SW. If the voltage on this capacitor is below the minimum
BOOT 1 O
required to operate the high side MOSFET, the output is switched off until the capacitor is refreshed.
VIN 2 I Input supply voltage with 4.5 V to 42 V operating range.
Enable terminal, with internal pull-up current source. Pull below 1.2 V to disable. Float to enable. Adjust the
EN 3 I
input undervoltage lockout with two resistors. See the Enable and Adjusting Undervoltage Lockout section.
Resistor Timing and External Clock. An internal amplifier holds this terminal at a fixed voltage when using an
external resistor to ground to set the switching frequency. If the terminal is pulled above the PLL upper
RT/CLK 4 I threshold, a mode change occurs and the terminal becomes a synchronization input. The internal amplifier is
disabled and the terminal is a high impedance clock input to the internal PLL. If clocking edges stop, the
internal amplifier is re-enabled and the operating mode returns to resistor frequency programming.
FB 5 I Inverting input of the transconductance (gm) error amplifier.
Error amplifier output and input to the output switch current (PWM) comparator. Connect frequency
COMP 6 O
compensation components to this terminal.
GND 7 – Ground
SW 8 I The source of the internal high-side power MOSFET and switching node of the converter.
Thermal GND terminal must be electrically connected to the exposed pad on the printed circuit board for proper
9 –
Pad operation.
6 Specifications
6.1 Absolute Maximum Ratings (1)
over operating free-air temperature range (unless otherwise noted)
VALUE
UNIT
MIN MAX
VIN –0.3 45
EN –0.3 8.4
BOOT 53
Input voltage V
FB –0.3 3
COMP –0.3 3
RT/CLK –0.3 3.6
BOOT-SW 8
Output voltage SW –0.6 45 V
SW, 10-ns Transient –2 45
Operating junction temperature, TJ –40 150 °C
Storage temperature, TSTG –65 150 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(1) Electrostatic discharge (ESD) to measure device sensitivity and immunity to damage caused by assembly line electrostatic discharges
into the device.
(2) Level listed above is the passing level per ANSI/ESDA/JEDEC JS-001. JEDEC document JEP155 states that 500V HBM allows safe
manufacturing with a standard ESD control process. terminals listed as 1000V may actually have higher performance.
(3) Level listed above is the passing level per EIA-JEDEC JESD22-C101. JEDEC document JEP157 states that 250V CDM allows safe
manufacturing with a standard ESD control process. terminals listed as 250V may actually have higher performance.
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) Power rating at a specific ambient temperature TA should be determined with a junction temperature of 150°C. This is the point where
distortion starts to substantially increase. See power dissipation estimate in application section of this data sheet for more information.
(1) Open Loop current limit measured directly at the SW terminal and is independent of the inductor value and slope compensation.
0.25 0.814
RDSON - On-State Resistance ( )
0.809
0.804
0.15
0.799
0.1
0.794
9 9
±40 ƒC
Series1
25 ƒC
Series2
8.5
High Side Switch Current (A)
8.5 150 ƒC
Series4
High Side Switch Current (A)
8 8
7.5
7.5
7
7
6.5
6.5
6
6 0 7 14 21 28 35 42
-50 -25 0 25 50 75 100 125 150 VI - Input Voltage (V) C028
TJ - Junction Temperature (qC)
530 400
520 350
510 300
500 250
490 200
480 150
470 100
460 50
450 0
±50 ±25 0 25 50 75 100 125 150 200 300 400 500 600 700 800 900 1000
TJ - Junction Temperature (ƒC) C029 RT/CLK - Resistance (k ) C030
Figure 5. Switching Frequency vs Junction Temperature Figure 6. Switching Frequency vs RT/CLK Resistance
Low Frequency Range
2500 500
2300
FSW - Switching Frequency (kHz)
450
2100
1900
400
gm (µA/V)
1700
1500 350
1300
300
1100
900
250
700
500 200
0 50 100 150 200 ±50 ±25 0 25 50 75 100 125 150
RT/CLK - Resistance (k ) C031 TJ - Junction Temperature (ƒC) C032
120 1.3
1.29
110
1.28
100 1.27
1.26
EN - Threshold (V)
90
1.25
gm (µA/V)
80 1.24
1.23
70
1.22
60 1.21
1.2
50
1.19
40 1.18
1.17
30
1.16
20 1.15
±50 ±25 0 25 50 75 100 125 150 ±50 ±25 0 25 50 75 100 125 150
TJ - Junction Temperature (ƒC) C033 TJ - Junction Temperature (ƒC) C034
Figure 9. EA Transconductance During Soft-Start vs Figure 10. EN Terminal Voltage vs Junction Temperature
Junction Temperature
IEN (µA)
IEN (uA)
±4.5 ±1.5
±4.7 ±1.7
±4.9 ±1.9
±5.1 ±2.1
±5.3 ±2.3
±5.5 ±2.5
±50 ±25 0 25 50 75 100 125 150 ±50 ±25 0 25 50 75 100 125 150
TJ - Junction Temperature (ƒC) C035 TJ - Junction Temperature (ƒC) C036
Figure 11. EN Terminal Current vs Junction Temperature Figure 12. EN Terminal Current vs Junction Temperature
±2.5 100
Series2
VSENSE Falling
±3.1
±3.3
±3.5 50
±3.7
±3.9
25
±4.1
±4.3
±4.5 0
±50 ±25 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
TJ - Junction Temperature (ƒC) C037 VSENSE (V) C038
Figure 13. EN Terminal Current Hysteresis vs Junction Figure 14. Switching Frequency vs VSENSE
Temperature
3 3
TJ =Series2
25ƒC
2.5 2.5
2 2
IVIN (µA)
IVIN (µA)
1.5 1.5
1 1
0.5 0.5
0 0
±50 ±25 0 25 50 75 100 125 150 0 7 14 21 28 35 42
TJ - Junction Temperature (ƒC) C039 VIN - Input Voltage (V) C040
Figure 15. Shutdown Supply Current vs Junction Figure 16. Shutdown Supply Current vs Input Voltage (VIN)
Temperature
170 170
IVIN (µA)
IVIN (µA)
150 150
130 130
110 110
90 90
70 70
±50 ±25 0 25 50 75 100 125 150 0 7 14 21 28 35 42
TJ - Junction Temperature (ƒC) C041 VIN - Input Voltage (V) C042
Figure 17. VIN Supply Current vs Junction Temperature Figure 18. VIN Supply Current vs Input Voltage
2.6 4.5
BOOT-PH UVLO Falling UVLO Start Switching
2.5 BOOT-PH UVLO Rising 4.4 UVLO Stop Switching
2.4 4.3
VI - BOOT-PH (V)
2.2 4.1
2.1 4.0
2.0 3.9
1.9 3.8
1.8 3.7
±50 ±25 0 25 50 75 100 125 150 ±50 ±25 0 25 50 75 100 125 150
TJ - Junction Temperature (ƒC) C043 TJ - Junction Temperature (ƒC) C044
Figure 19. BOOT-SW UVLO vs Junction Temperature Figure 20. Input Voltage UVLO vs Junction Temperature
10
12
12V,V,25ƒC
25 C
9
8
Soft-Start Time (ms)
7
6
5
4
3
2
1
0
100
100 300
300 500
500700
700900
9001100
11001300
13001500
15001700 1900
1700 2100
1900 2300
2100 2500
2300 2500
Switching Frequency (kHz) C045
7 Detailed Description
7.1 Overview
The TPS54540 is a 42 V, 5 A, step-down (buck) regulator with an integrated high side n-channel MOSFET. The
device implements constant frequency, current mode control which reduces output capacitance and simplifies
external frequency compensation. The wide switching frequency range of 100 kHz to 2500 kHz allows either
efficiency or size optimization when selecting the output filter components. The switching frequency is adjusted
using a resistor to ground connected to the RT/CLK terminal. The device has an internal phase-locked loop (PLL)
connected to the RT/CLK terminal that will synchronize the power switch turn on to a falling edge of an external
clock signal.
The TPS54540 has a default input start-up voltage of approximately 4.3 V. The EN terminal can be used to
adjust the input voltage undervoltage lockout (UVLO) threshold with two external resistors. An internal pull up
current source enables operation when the EN terminal is floating. The operating current is 146 μA under no load
condition (not switching). When the device is disabled, the supply current is 2 μA.
The integrated 92 mΩ high side MOSFET supports high efficiency power supply designs capable of delivering 5
amperes of continuous current to a load. The gate drive bias voltage for the integrated high side MOSFET is
supplied by a bootstrap capacitor connected from the BOOT to SW terminals. The TPS54540 reduces the
external component count by integrating the bootstrap recharge diode. The BOOT terminal capacitor voltage is
monitored by a UVLO circuit which turns off the high side MOSFET when the BOOT to SW voltage falls below a
preset threshold. An automatic BOOT capacitor recharge circuit allows the TPS54540 to operate at high duty
cycles approaching 100%. Therefore, the maximum output voltage is near the minimum input supply voltage of
the application. The minimum output voltage is the internal 0.8 V feedback reference.
Output overvoltage transients are minimized by an Overvoltage Transient Protection (OVP) comparator. When
the OVP comparator is activated, the high side MOSFET is turned off and remains off until the output voltage is
less than 106% of the desired output voltage.
The TPS54540 includes an internal soft-start circuit that slows the output rise time during start-up to reduce in-
rush current and output voltage overshoot. Output overload conditions reset the soft-start timer. When the
overload condition is removed, the soft-start circuit controls the recovery from the fault output level to the nominal
regulation voltage. A frequency foldback circuit reduces the switching frequency during start-up and overcurrent
fault conditions to help maintain control of the inductor current.
Thermal
Shutdown UVLO
Enable
OV Comparator
Shutdown
Shutdown
Logic
Enable
Threshold
Boot
Charge
Voltage
Minimum Boot
Reference Current
Clamp UVLO
Sense
Pulse
Error Skip
Amplifier PWM
FB Comparator BOOT
Logic
Shutdown
Slope
6 Compensation
COMP SW
Frequency
Foldback
Reference
DAC for
Soft- Start
Maximum
Clamp
Oscillator
with PLL
Equation 1 calculates the minimum input voltage required to regulate the output voltage and ensure normal
operation of the device. This calculation must include tolerance of the component specifications and the variation
of these specifications at their maximum operating temperature in the application
VOUT VF Rdc u IOUT
VIN min RDS on u IOUT VF
0.99
where
• VF = Schottky diode forward voltage
• Rdc = DC resistance of inductor and PCB
• RDS(on) = High-side MOSFET RDS(on) (1)
During high duty cycle (low dropout) conditions, inductor current ripple increases when the BOOT capacitor is
being recharged resulting in an increase in output voltage ripple. Increased ripple occurs when the off time
required to recharge the BOOT capacitor is longer than the high side off time associated with cycle by cycle
PWM control.
At heavy loads, the minimum input voltage must be increased to insure a monotonic startup. Equation 2 can be
used to calculate the minimum input voltage for this condition.
i1 ihys
RUVLO1 RUVLO1
10 kW
EN EN
Node
V EN
RUVLO2 RUVLO2 5.8 V
Copyright © 2017, Texas Instruments Incorporated Copyright © 2016, Texas Instruments Incorporated
Figure 22. Adjustable Undervoltage Lockout Figure 23. Internal EN Terminal Clamp
(UVLO)
V - VSTOP
RUVLO1 = START
IHYS (4)
VENA
RUVLO2 =
VSTART - VENA
+ I1
RUVLO1 (5)
tON
To protect the converter in overload conditions at higher switching frequencies and input voltages, the TPS54540
implements a frequency foldback. The oscillator frequency is divided by 1, 2, 4, and 8 as the FB terminal voltage
falls from 0.8 V to 0 V. The TPS54540 uses a digital frequency foldback to enable synchronization to an external
clock during normal start-up and fault conditions. During short-circuit events, the inductor current can exceed the
peak current limit because of the high input voltage and the minimum controllable on time. When the output
voltage is forced low by the shorted load, the inductor current decreases slowly during the switch off time. The
frequency foldback effectively increases the off time by increasing the period of the switching cycle providing
more time for the inductor current to ramp down.
With a maximum frequency foldback ratio of 8, there is a maximum frequency at which the inductor current can
be controlled by frequency foldback protection. Equation 10 calculates the maximum switching frequency at
which the inductor current will remain under control when VOUT is forced to VOUT(SC). The selected operating
frequency should not exceed the calculated value.
Equation 9 calculates the maximum switching frequency limitation set by the minimum controllable on time and
the input to output step down ratio. Setting the switching frequency above this value will cause the regulator to
skip switching pulses to achieve the low duty cycle required at maximum input voltage.
æ I ´R + V ö
1 OUT + Vd
fSW (max skip ) = ´ç O dc ÷
tON ç VIN - IO ´ RDS(on ) + Vd ÷
è ø (9)
TPS54540 TPS54540
RT /CLK
RT /CLK
PLL PLL
RT Hi -Z
Clock Clock
Source Source RT
SW
SW
EXT EXT
IL
IL
Figure 26. Plot of Synchronizing in CCM Figure 27. Plot of Synchronizing in DCM
SW
EXT
IL
SW
VO
Power Stage
gmps 17 A/V
a
R1 RESR
COMP RL
c
FB COUT
0.8 V
R3 CO RO
gmea
C2
350 mA/V R2
C1
7.3.15 Simple Small Signal Model for Peak Current Mode Control
Figure 30 describes a simple small signal model that can be used to design the frequency compensation. The
TPS54540 power stage can be approximated by a voltage-controlled current source (duty cycle modulator)
supplying current to the output capacitor and load resistor. The control to output transfer function is shown in
Equation 11 and consists of a dc gain, one dominant pole, and one ESR zero. The quotient of the change in
switch current and the change in COMP terminal voltage (node c in Figure 29) is the power stage
transconductance, gmPS. The gmPS for the TPS54540 is 17 A/V. The low-frequency gain of the power stage is
the product of the transconductance and the load resistance as shown in Equation 12.
VC Adc
RESR
fp
RL
gmps
COUT
fz
Figure 30. Simple Small Signal Model and Frequency Response for Peak Current Mode Control
R1
FB
gmea Type 2A Type 2B Type 1
COMP
Vref
R3 C2 R3
R2 RO CO C2
C1 C1
Aol
A0 P1
Z1 P2
A1
BW
Figure 32. Frequency Response of the Type 2A and Type 2B Frequency Compensation
Aol(V/V)
Ro =
gmea (15)
gmea
CO =
2p ´ BW (Hz) (16)
æ s ö
ç1 + ÷
è 2p ´ fZ1 ø
EA = A0 ´
æ s ö æ s ö
ç1 + ÷ ´ ç1 + ÷
è 2p ´ fP1 ø è 2p ´ fP2 ø
(17)
R2
A0 = gmea ´ Ro ´
R1 + R2 (18)
R2
A1 = gmea ´ Ro| | R3 ´
R1 + R2 (19)
1
P1 =
2p ´ Ro ´ C1 (20)
1
Z1 =
2p ´ R3 ´ C1 (21)
1
P2 = type 2a
2p ´ R3 | | RO ´ (C2 + CO ) (22)
1
P2 = type 2b
2p ´ R3 | | RO ´ CO (23)
1
P2 = type 1
2p ´ R O ´ (C2 + C O ) (24)
EN
COMP
RT /CLK Rcomp
Czero Cpole
RT
VOPOS
+
VIN + Copos
Cin
Cboot
BOOT GND
VIN SW
Lo
Cd R1
+
GND Coneg
TPS54540 R2
FB VONEG
EN
COMP
Rcomp
RT /CLK
Czero Cpole
RT
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
U1 D1 C6 C7
TPS54540DDA 100uF 100uF
1 8 PDS760
BOOT SW R5
VIN 6 V to 42 V 2 7 31.6k
VIN GND
3 6
EN COMP
PWRPD
C10 C3 C1 C2 R1 FB FB
4 5
365k RT/CLK FB
4.7uF 4.7uF 4.7uF 4.7uF
9 R4
16 .9k C8 R6
R2 R3 47 pF 10 .2k
88.7k 243 k C5
4700 pF
( )÷ö
2
æ
1 ç VOUT ´ VIN(max ) - VOUT
2
1 æ 3.3 V ´ (42 V - 3.3 V ) ö
IL(rms ) = (IOUT ) 2
+ ´
12 çç VIN(max ) ´ LO ´ fSW ÷ = (5 A )
2
+ ´ ç
ç
÷ =5A
÷
÷ 12 è 42 V ´ 4.8 mH ´ 400 kHz ø
è ø
(30)
spacer
IRIPPLE 1.58 A
IL(peak ) = IOUT + = 5A + = 5.79 A
2 2 (31)
The desired response to a large change in the load current is the first criteria. The output capacitor needs to
supply the increased load current until the regulator responds to the load step. A regulator does not respond
immediately to a large, fast increase in the load current such as transitioning from no load to a full load. The
regulator usually needs two or more clock cycles for the control loop to sense the change in output voltage and
adjust the peak switch current in response to the higher load. The output capacitance must be large enough to
supply the difference in current for 2 clock cycles to maintain the output voltage within the specified range.
Equation 32 shows the minimum output capacitance necessary, where ΔIOUT is the change in output current, ƒsw
is the regulators switching frequency and ΔVOUT is the allowable change in the output voltage. For this example,
the transient load response is specified as a 4% change in VOUT for a load step from 1.25 A to 3.75 A. Therefore,
ΔIOUT is 3.75 A - 1.25 A = 2.5 A and ΔVOUT = 0.04 × 3.3 V = 0.13 V. Using these numbers gives a minimum
capacitance of 95 μF. This value does not take the ESR of the output capacitor into account in the output voltage
change. For ceramic capacitors, the ESR is usually small enough to be ignored. Aluminum electrolytic and
tantalum capacitors have higher ESR that must be included in load step calculations.
The output capacitor must also be sized to absorb energy stored in the inductor when transitioning from a high to
low load current. The catch diode of the regulator can not sink current so energy stored in the inductor can
produce an output voltage overshoot when the load current rapidly decreases. A typical load step response is
shown in Figure 36. The excess energy absorbed in the output capacitor will increase the voltage on the
capacitor. The capacitor must be sized to maintain the desired output voltage during these transient periods.
Equation 33 calculates the minimum capacitance required to keep the output voltage overshoot to a desired
value, where LO is the value of the inductor, IOH is the output current under heavy load, IOL is the output under
light load, Vf is the peak output voltage, and Vi is the initial voltage. For this example, the worst case load step
will be from 3.75 A to 1.25 A. The output voltage increases during this load transition and the stated maximum in
our specification is 4 % of the output voltage. This makes Vf = 1.04 × 3.3 V = 3.43 V. Vi is the initial capacitor
voltage which is the nominal output voltage of 3.3 V. Using these numbers in Equation 33 yields a minimum
capacitance of 68 μF.
Equation 34 calculates the minimum output capacitance needed to meet the output voltage ripple specification,
where ƒsw is the switching frequency, VORIPPLE is the maximum allowable output voltage ripple, and IRIPPLE is the
inductor ripple current. Equation 34 yields 30 μF.
Equation 35 calculates the maximum ESR an output capacitor can have to meet the output voltage ripple
specification. Equation 35 indicates the equivalent ESR should be less than 10 mΩ.
The most stringent criteria for the output capacitor is 95 μF required to maintain the output voltage within
regulation tolerance during a load transient.
Capacitance de-ratings for aging, temperature and dc bias increases this minimum value. For this example, 2 x
100 μF, 6.3 V type X5R ceramic capacitors with 2 mΩ of ESR will be used. The derated capacitance is 130 µF,
well above the minimum required capacitance of 95 µF.
Capacitors are generally rated for a maximum ripple current that can be filtered without degrading capacitor
reliability, especially non ceramic capacitors. Some capacitor data sheets specify the Root Mean Square (RMS)
value of the maximum ripple current. Equation 36 can be used to calculate the RMS ripple current that the output
capacitor must support. For this example, Equation 36 yields 460 mA.
2 ´ DIOUT 2 ´ 2.5 A
COUT > = = 95 mF
fSW ´ DVOUT 400 kHz x 0.13 V (32)
COUT > LO x
((I ) - (I ) ) = 4.8 mH x (3.75 A - 1.25 A ) = 68 mF
OH
2
OL
2 2 2
((V ) - (V ) )
f
2
I
2
(3.43 V - 3.3 V )
2 2
(33)
1 1 1 1
COUT > ´ = x = 30 mF
8 ´ fSW æ VORIPPLE ö 8 x 400 kHz æ 16 mV ö
ç ÷ ç 1.58 A ÷
è IRIPPLE ø è ø (34)
V 16 mV
RESR < ORIPPLE = = 10 mW
IRIPPLE 1.58 A (35)
ICOUT(rms) =
(
VOUT ´ VIN(max ) - VOUT )= 3.3 V ´ (42 V - 3.3 V )
= 460 mA
12 ´ VIN(max ) ´ LO ´ fSW 12 ´ 42 V ´ 4.8 mH ´ 400 kHz
(36)
PD =
(V IN(max ) - VOUT )´ I OUT ´ Vf d
+
C j ´ fSW ´ (VIN + Vf d)
2
=
VIN 2
(12 V - 3.3 V ) ´ 5 A x 0.52 V 300 pF x 400 kHz x (12 V + 0.52 V)2
+ = 1.9 W
12 V 2 (37)
ICI(rms ) = IOUT x
VOUT
x
(V IN(min ) - VOUT ) = 5A 3.3 V
´
(6 V - 3.3 V )
= 2.5 A
VIN(min ) VIN(min ) 6V 6V
(38)
I ´ 0.25 5 A ´ 0.25
DVIN = OUT = = 170 mV
CIN ´ fSW 18.8 mF ´ 400 kHz (39)
8.2.2.11 Compensation
There are several methods to design compensation for DC-DC regulators. The method presented here is easy to
calculate and ignores the effects of the slope compensation that is internal to the device. Since the slope
compensation is ignored, the actual crossover frequency will be lower than the crossover frequency used in the
calculations. This method assumes the crossover frequency is between the modulator pole and the ESR zero
and the ESR zero is at least 10 times greater the modulator pole.
To get started, the modulator pole, ƒp(mod), and the ESR zero, ƒz1 must be calculated using Equation 44 and
Equation 45. For COUT, use a derated value of 130 μF. Use equations Equation 46 and Equation 47 to estimate a
starting point for the crossover frequency, ƒco. For the example design, ƒp(mod) is 1850 Hz and ƒz(mod) is 610 kHz.
Equation 45 is the geometric mean of the modulator pole and the ESR zero and Equation 47 is the mean of
modulator pole and half of the switching frequency. Equation 46 yields 34 kHz and Equation 47 gives 19 kHz.
Use the geometric mean value of Equation 46 and Equation 47 for an initial crossover frequency. For this
example, after lab measurement, the crossover frequency target was increased to 30 kHz for an improved
transient response.
Next, the compensation components are calculated. A resistor in series with a capacitor is used to create a
compensating zero. A capacitor in parallel to these two components forms the compensating pole.
IOUT(max ) 5A
fP(mod) = = = 1850 Hz
2 ´ p ´ VOUT ´ COUT 2 ´ p ´ 3.3 V ´ 130 mF (44)
1 1
f Z(mod) = = = 610 kHz
2 ´ p ´ RESR ´ COUT 2 ´ p ´ 1 mW ´ 130 mF (45)
fco1 = fp(mod) x f z(mod) = 1850 Hz x 610 kHz = 34 kHz
(46)
fSW 400 kHz
fco2 = fp(mod) x = 1850 Hz x = 19 kHz
2 2 (47)
To determine the compensation resistor, R4, use Equation 48. The typical power stage transconductance, gmps,
is 17 A/V. The output voltage, VO, reference voltage, VREF, and amplifier transconductance, gmea, are 3.3 V, 0.8
V and 350 μA/V, respectively. R4 is calculated to be 17 kΩ and a standard value of 16.9 kΩ is selected. Use
Equation 49 to set the compensation zero to the modulator pole frequency. Equation 49 yields 5100 pF for
compensating capacitor C5. 4700 pF is used for this design.
æ 2 ´ p ´ fco ´ COUT ö æ VOUT ö æ 2 ´ p ´ 30 kHz ´ 130 mF ö æ 3.3V ö
R4 = ç ÷ x ç ÷ = ç ÷ xç ÷ = 17 kW
è gmps ø è VREF x gmea ø è 17 A / V ø è 0.8 V x 350 mA / V ø
(48)
1 1
C5 = = = 5100 pF
2 ´ p ´ R4 x fp(mod) 2 ´ p ´ 16.9 kW x 1850 Hz (49)
A compensation pole can be implemented if desired by adding capacitor C8 in parallel with the series
combination of R4 and C5. Use the larger value calculated from Equation 50 and Equation 51 for C8 to set the
compensation pole. The selected value of C8 is 47 pF for this design example.
C x RESR 130 mF x 1 mW
C8 = OUT = = 15 pF
R4 16.9 kW (50)
1 1
C8 = = = 47 pF
R4 x f sw x p 16.9 kW x 400 kHz x p (51)
IOUT
1 A/div
VIN
Time = 4 ms/div
Time = 100 Ps/div
VIN
5 V/div
VIN
5 V/div
EN
2 V/div
2 V/div
EN
2 V/div
VOUT VOUT
2 V/div
SW
10 V/div
10 V/div
SW
500 mA/div
1 A/div
IL
IL
10 mV/div
10 mV/div
VOUT ± AC Coupled
VOUT ± AC Coupled
IOUT = 100 mA
Figure 40. Output Ripple CCM Figure 41. Output Ripple DCM
SW
10 V/div
10 V/div
SW
1 A/div
200 mA/div
IL
IL
200 mV/div
10 mV/div
VOUT ± AC Coupled
No Load
VIN ± AC Coupled
Figure 42. Output Ripple PSM Figure 43. Input Ripple CCM
SW
2 V/div
10 V/div
IL
SW
500 mA/div
200 mA/div
IL
10 mV/div
VOUT = 5 V
20 mV/div
VIN ± AC Coupled
IOUT = 100 mA No Load
VIN = 5.5 V EN Floating
Figure 44. Input Ripple DCM Figure 45. Low Dropout Operation
100 100
90
95
80
90
70
Efficiency (%)
Efficiency (%)
85 60
80 50
VIN=6V
V IN = 7 V
40
75
V IN = 12 V
VIN=12V
30
70 VOUT = 5 V, fsw = 400 kHz
20 VIN=24V
V IN = 24 V
65 Series4
VIN = 7 V 12V
VIN = 12 V
10
VIN = 24 V
24V VIN = 36 V
36V VOUT = 5 V, fsw = 400 kHz VIN=24V
V IN = 36 V
60 0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0.001 0.01 0.1 1
IO - Output Current (A) C024 IO - Output Current (A) C024
Figure 46. Efficiency vs Load Current Figure 47. Light Load Efficiency
100 100
95 90
80
90
70
Efficiency (%)
Efficiency (%)
85 60
80 50
75 40
VIN
V IN ==66VV
30 VIN
V IN ==66VV
70
V IN ==12
VIN 12VV 20 V IN ==12
VIN 12VV
65 V IN ==24
VIN 24VV V IN ==24
VIN 24VV
10
V VOUT = 3.3 V, fsw = 400 kHz
VOUT = 3.3 V, fsw = 400 kHz IN ==36
VIN 36VV V IN ==36
VIN 36VV
60 0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0.001 0.01 0.1 1
Load Current (A) C050 Load Current (A) C051
Figure 48. Efficiency vs Load Current Figure 49. Light Load Efficiency
100 60 180
50 150
95
40 120
90 30 90
20 60
Efficiency (%)
85
Gain (dB)
Phase (£)
10 30
80 0 0
±10 ±30
75 ±20 ±60
V IN = 18 V
18in
70 ±30 ±90
Series1
V IN = 24 V ±40 Gain ±120
65 ±50 ±150
VOUT = 12 V, fsw = 800 kHz Series3 VIN = 12 V, VOUT = 3.3 V, IOUT = 5 A Phase
V IN = 36 V
±60 ±180
60
10 100 1k 10k 100k 1M
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Frequency (Hz) C053
IO - Output Current (A) C024
Figure 50. Efficiency vs Output Current Figure 51. Overall Loop Frequency Response
0.5 0.20
VIN = 12 V, IOUT = 5 A, fsw = 400 kHz
0.4 0.15
Output Voltage Normalized (%)
-0.3 ±0.15
VIN = 12 V, VOUT = 3.3 V, fsw = 400 kHz
-0.4 ±0.20
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5 10 15 20 25 30 35 40 45
Output Current (A) C054 Input Voltage (V) C055
Figure 52. Regulation vs Load Current Figure 53. Regulation vs Input Voltage
10 Layout
90 90
80 80
70 70
60 60
TA (ƒC)
TA (ƒC)
50 50
6V 8V
40 40
12 V 12 V
30 24 V 30 24 V
36 V 36 V
20 20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
IOUT (Amps) C056 IOUT (Amps) C057
90 90
80 80
70 70
60 60
TA (ƒC)
TA (ƒC)
Output
Capacitor Output
Topside Inductor
Ground Route Boot Capacitor
Area Catch
Trace on another layer to
provide wide path for Diode
topside ground
Input
Bypass
Capacitor BOOT SW
Vin
VIN GND
EN COMP
UVLO
RT/CLK FB
Adjust Compensation
Resistor
Resistors Network
Divider
11.4 Trademarks
Eco-mode, PowerPAD, E2E are trademarks of Texas Instruments.
WEBENCH is a registered trademark of Texas Instruments.
11.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
www.ti.com 13-Sep-2023
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)
TPS54540DDA ACTIVE SO PowerPAD DDA 8 75 RoHS & Green NIPDAU | NIPDAUAG Level-2-260C-1 YEAR 0 to 0 54540 Samples
TPS54540DDAR ACTIVE SO PowerPAD DDA 8 2500 RoHS & Green NIPDAUAG Level-2-260C-1 YEAR -40 to 125 54540 Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com 13-Sep-2023
• Automotive : TPS54540-Q1
• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 13-Sep-2023
B0 W
Reel
Diameter
Cavity A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
W Overall width of the carrier tape
P1 Pitch between successive cavity centers
Sprocket Holes
Q1 Q2 Q1 Q2
Pocket Quadrants
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 13-Sep-2023
Width (mm)
H
W
Pack Materials-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 13-Sep-2023
TUBE
T - Tube
height L - Tube length
W - Tube
width
Pack Materials-Page 3
GENERIC PACKAGE VIEW
DDA 8 PowerPAD TM SOIC - 1.7 mm max height
PLASTIC SMALL OUTLINE
Images above are just a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.
4202561/G
PACKAGE OUTLINE
DDA0008B SCALE 2.400
PowerPAD TM SOIC - 1.7 mm max height
PLASTIC SMALL OUTLINE
C
6.2
TYP SEATING PLANE
5.8
A
PIN 1 ID
AREA 0.1 C
6X 1.27
8
1
5.0 2X
4.8 3.81
NOTE 3
4
5
0.51
8X
4.0 0.31
B 1.7 MAX
3.8 0.25 C A B
NOTE 4
0.25
TYP
0.10
SEE DETAIL A
4 5
EXPOSED
THERMAL PAD
3.4 0.25
9 GAGE PLANE
2.8
0.15
0 -8 1.27 0.00
1 8
0.40
DETAIL A
2.71 TYPICAL
2.11
4214849/A 08/2016
PowerPAD is a trademark of Texas Instruments.
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side.
5. Reference JEDEC registration MS-012.
www.ti.com
EXAMPLE BOARD LAYOUT
DDA0008B PowerPAD TM SOIC - 1.7 mm max height
PLASTIC SMALL OUTLINE
(2.95)
NOTE 9
(2.71) SOLDER MASK
DEFINED PAD
SOLDER MASK
OPENING
8X (1.55) SEE DETAILS
1
8
8X (0.6)
(3.4)
SYMM 9 SOLDER MASK
(1.3)
TYP OPENING
(4.9)
NOTE 9
6X (1.27)
4 5
(R0.05) TYP
SYMM METAL COVERED
( 0.2) TYP BY SOLDER MASK
VIA
(1.3) TYP
(5.4)
4214849/A 08/2016
NOTES: (continued)
www.ti.com
EXAMPLE STENCIL DESIGN
DDA0008B PowerPAD TM SOIC - 1.7 mm max height
PLASTIC SMALL OUTLINE
(2.71)
BASED ON
0.125 THICK
STENCIL
8X (1.55) (R0.05) TYP
1
8
8X (0.6)
(3.4)
SYMM 9 BASED ON
0.125 THICK
STENCIL
6X (1.27)
5
4
METAL COVERED
SYMM SEE TABLE FOR
BY SOLDER MASK
DIFFERENT OPENINGS
FOR OTHER STENCIL
(5.4)
THICKNESSES
4214849/A 08/2016
NOTES: (continued)
11. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
12. Board assembly site may have different recommendations for stencil design.
www.ti.com
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