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    Nte 2990

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    CRAFT
    This document describes a p-channel enhancement mode MOSFET in a TO220 full pack. It has low on-resistance and input capacitance, making it suitable for applications like switching regulators, UPS systems, and DC-DC converters. The document provides maximum ratings, electrical characteristics, and diagrams of the component.

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    Nte 2990

    Uploaded by

    CRAFT
    19 views2 pages
    This document describes a p-channel enhancement mode MOSFET in a TO220 full pack. It has low on-resistance and input capacitance, making it suitable for applications like switching regulators, UPS systems, and DC-DC converters. The document provides maximum ratings, electrical characteristics, and diagrams of the component.

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    This document describes a p-channel enhancement mode MOSFET in a TO220 full pack. It has low on-resistance and input capacitance, making it suitable for applications like switching regulators, UPS systems, and DC-DC converters. The document provides maximum ratings, electrical characteristics, and diagrams of the component.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    19 views2 pages

    Nte 2990

    Uploaded by

    CRAFT
    This document describes a p-channel enhancement mode MOSFET in a TO220 full pack. It has low on-resistance and input capacitance, making it suitable for applications like switching regulators, UPS systems, and DC-DC converters. The document provides maximum ratings, electrical characteristics, and diagrams of the component.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    NTE2990

    MOSFET
    P−Channel, Enhancement Mode
    High Speed Switch
    TO220 Full Pack

    Features: D
    D Low Drain−Source On−Resistance
    D Low Input Capacitance
    D High Avalanche Capability Ratings

    Applications: G
    D Switching Regulators
    D UPS S
    D DC−DC Converters
    D General Purpose Power Amplifier

    Absolute Maximum Ratings: (TA = +255C unless otherwise specified)


    Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V
    Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30V
    Drain Current, ID
    Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +6A
    Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +24A
    Maximum Power Dissipation, PD
    TC = +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35W
    TA = +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0W
    Single Avalanche Current (Note 2), IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
    Single Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180mJ
    Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1505C
    Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C
    Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.55C/W
    Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.775C/W
    Note 1. Pulse Width 3 10+s, Duty Cycle 3 1%.
    Note 2. Starting Tch = +255C, RG = 25", VGS = −20V " 0.
    Rev. 10−13
    Electrical Characteristics: (TA = +255C unless otherwise specified)
    Parameter Symbol Test Conditions Min Typ Max Unit
    Drain−Source On−State Resistance RDS(on) ID = 3A, VGS = 10V − 0.55 0.80 "
    Gate Threshold Voltage VGS(th) ID = 1mA, VDS = 10V 4.0 4.8 5.5 V
    Forward Transfer Admittance gfs ID = 3A, VDS = 10V 2.0 3.5 − S
    Zero Gate Voltage Drain Current IDSS VDS = 250V, VGS = 0V − − 100 +A
    Gate−Source Leakage Current IGSS VGS = +30V, VDS = 0V − − +100 nA
    Input Capacitance Ciss VDS = 10V, VGS = 0V, f = 1MHz − 1040 − pF
    Output Capacitance Coss − 360 − pF
    Reverse Transfer Capacitance Crss − 70 − pF
    Turn−On Time td(on) VDD = 125V, ID = 3A, − 25 − ns
    VGS(on) = 10V, RG = 10",
    Rise Time tr RL = 42" − 16 − ns
    Turn−Off Time td(off) − 47 − ns
    Fall Time tf − 14 − ns
    Total Gate Charge Qg VDD = 200V, VGS = 10V, ID = 6A − 23.1 − nC
    Gate−Source Charge Qgs − 7.1 − nC
    Gate−Drain (“Miller”) Charge Qgd − 12.9 − nC
    Source−Drain Diode Ratings and Characteristics: (TA = +255C unless otherwise specified)
    Diode Forward Voltage VDSF IDR = 6A, VGS = 0V − 0.92 − V
    Reverse Recovery Time trr IDR = 6A, VGS = 0V, − 155 − ns
    di/dt = 50A/+s
    Reverse Recovered Charge Qrr − 930 − nC

    .402 (10.2) Max .173 (4.4) Max

    .224 (5.7) Max .114 (2.9) Max


    .122 (3.1)
    Dia

    .295
    (7.5)
    .669 .165
    (17.0) (4.2)
    Max

    G D S

    .531
    (13.5)
    Min

    .100 (2.54) .059 (1.5) Max

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