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    Nte 457

    Uploaded by

    Zoran Constantinescu

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Nte 457

    Uploaded by

    Zoran Constantinescu
    4 views2 pages

    Original Title

    nte457

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    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    4 views2 pages

    Nte 457

    Uploaded by

    Zoran Constantinescu

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    NTE457

    Silicon N−Channel JFET Transistor


    General Purpose Amp, Switch
    TO92 Type Package
    Absolute Maximum Ratings:
    Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
    Drain−Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
    Reverse Gate−Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25V
    Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
    Total Device Dissipation (TA = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310mW
    Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.82mW/5C
    Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1255C
    Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −655 to +1505C

    Electrical Characteristics: (TA = +255C unless otherwise specified)


    Parameter Symbol Test Conditions Min Typ Max Unit
    OFF Characteristics
    Gate−Source Breakdown Voltage V(BR)GS IG = −103A, VDS = 0 −25 − − V
    S
    Gate Reverse Current IGSS VGS = 15V, VDS = 0 − − −1 mA
    VGS = 15V, VDS = 0, TA = +1005C − − −200 mA
    Gate−Source Cutoff Voltage VGS(off) VDS = 15V, ID = 10nA −0.5 − −6.0 V
    Gate−Source Voltage VGS VDS = 15V, ID = 1003A − − −2.5 V
    ON Characteristics
    Zero−Gate Voltage Drain Current IDSS VDS = 15V, VGS = 0, Note 1 1 3 5 mA
    Small−Signal Characteristics
    Forward Transfer Admittance |yfs| VDS = 15V, VGS = 0, f = 1kHz, 1000 − 5000 3mhos
    Common Source Note 1
    Output Admittance Common Source |yos| VDS = 15V, VGS = 0, f = 1kHz, − 10 50 3mhos
    Note 1
    Input Capacitance Ciss VDS = 15V, VGS = 0, f = 1kHz − 4.5 7.0 pF
    Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0, f = 1kHz − 1.5 3.0 pF

    Note 1. Pulse Test: Pulse Width 3 630ms, Duty Cycle 3 10%.


    Rev. 10−13
    D
    G
    S

    .135 (3.45) Min

    .210
    (5.33)
    Max
    Seating Plane

    .500 .021 (.445) Dia Max


    (12.7)
    Min

    D S G

    .100 (2.54)

    .050 (1.27)

    .165
    (4.2)
    Max

    .105 (2.67) Max


    .105 (2.67) Max
    .205 (5.2) Max

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