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    Samsung 2N5088-89 Datasheet - Retroamplis

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    nanodocl5099
    This document provides specifications for the 2N5088/89 NPN epitaxial silicon transistor. The 2N5088 has a collector-emitter voltage rating of 30V while the 2N5089 is rated for 25V. Both have a maximum collector dissipation of 625mW. Electrical characteristics include a current gain of 300-900 for the 2N5088 and 400-1200 for the 2N5089, as well as a collector-emitter saturation voltage of 0.5V or less. The document lists various maximum ratings and characteristics for these transistors.

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    Samsung 2N5088-89 Datasheet - Retroamplis

    Uploaded by

    nanodocl5099
    18 views2 pages
    This document provides specifications for the 2N5088/89 NPN epitaxial silicon transistor. The 2N5088 has a collector-emitter voltage rating of 30V while the 2N5089 is rated for 25V. Both have a maximum collector dissipation of 625mW. Electrical characteristics include a current gain of 300-900 for the 2N5088 and 400-1200 for the 2N5089, as well as a collector-emitter saturation voltage of 0.5V or less. The document lists various maximum ratings and characteristics for these transistors.

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    SAMSUNG 2N5088-89 DATASHEET - RETROAMPLIS

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    This document provides specifications for the 2N5088/89 NPN epitaxial silicon transistor. The 2N5088 has a collector-emitter voltage rating of 30V while the 2N5089 is rated for 25V. Both have a maximum collector dissipation of 625mW. Electrical characteristics include a current gain of 300-900 for the 2N5088 and 400-1200 for the 2N5089, as well as a collector-emitter saturation voltage of 0.5V or less. The document lists various maximum ratings and characteristics for these transistors.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    18 views2 pages

    Samsung 2N5088-89 Datasheet - Retroamplis

    Uploaded by

    nanodocl5099
    This document provides specifications for the 2N5088/89 NPN epitaxial silicon transistor. The 2N5088 has a collector-emitter voltage rating of 30V while the 2N5089 is rated for 25V. Both have a maximum collector dissipation of 625mW. Electrical characteristics include a current gain of 300-900 for the 2N5088 and 400-1200 for the 2N5089, as well as a collector-emitter saturation voltage of 0.5V or less. The document lists various maximum ratings and characteristics for these transistors.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR

    AMPLIFIER TRANSISTOR
    • Collector-Emitter Voltage: VCEO= 2N5088: 30V TO-92
    2N5089: 25V
    • Collector Dissipation: PC (max)=625mW

    ABSOLUTE MAXIMUM RATINGS (TA=25 &)


    Characteristic Symbol Rating Unit

    Collector-Base Voltage :2N5088 VCBO


    2N5089 30 V
    Collector-Emitter Voltage :2N5088 VCEO 30 V
    2N5089 25 V
    Emitter-Base Voltage VEBO 4.5 V
    Collector Current IC 50 mA

    &
    Collector Dissipation PC 625 mW
    Junction Temperature TJ 150
    Storage Temperature T STG -55 ~ 150 &
    1.Emitter 2. Base 3. Collector

    ELECTRICAL CHARACTERISTICS (TA=25 &)


    Characteristic Symbol Test Conditions Min Typ Max Unit

    Collector-Base Breakdown Voltage BVCBO IC=100 }, I =0


    E
    :2N5088 35 V
    :2N5089 V
    7Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0
    30

    :2N5088 30 V
    :2N5089 25 V
    Collector Cut-off Current ICBO
    :2N4403 VCB=20V, IE=0 50 nA
    :2N4402 VCB=15V, IE=0 5 nA
    Base Cut-off Current IEBO VBE=3V, IC=0 50 nA
    VBE=4.5V, IC=0
    7DC Current Gain 100 nA

    }
    hFE
    :2N5088 VCE=5V, IC=100 300 900
    :2N5089 400 1,200
    :2N5088 VCE=5V, IC=1mA 350
    :2N5089
    :2N5088
    7VCE=5V, IC=10mA 450
    300
    :2N5089 400
    Collector-Emitter Saturation Voltage IC=10mA, IB=1mA
    7Base-Emitter Saturation Voltage VCE (sat)
    IC=10mA, VCE=5V
    0.5 V
    VBE (on) 0.8 V
    Current-Base Capacitance COB VCB=5V, IE=0 pF
    4
    }
    f=100MHz
    Current Gain Bandwidth Product VCE=5V, IC=500 50 MHz
    fT
    V =5V, I =100}
    R =10Œ
    Noise Figure CE C
    NF
    S
    f=10Hz to 15.7KHz
    :2N5088 3 dB
    :2N5089 2 dB
    7Pulse Test: Pulse Width300s, Duty Cycle2%
    2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR

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