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    Arduino A1SHB-YANGJING

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    Babobrill
    1) The document provides information on the SI2301 P-channel MOSFET from Shenzhen Yangjing Microelectronics. 2) Key features of the SI2301 include a trench gate structure, applications in load switches and DC/DC converters, and markings of A1SHB1. 3) Electrical characteristics including maximum ratings, static characteristics, dynamic characteristics, and typical output/transfer characteristics are specified.

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    © All Rights Reserved
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    Arduino A1SHB-YANGJING

    Uploaded by

    Babobrill
    27 views3 pages
    1) The document provides information on the SI2301 P-channel MOSFET from Shenzhen Yangjing Microelectronics. 2) Key features of the SI2301 include a trench gate structure, applications in load switches and DC/DC converters, and markings of A1SHB1. 3) Electrical characteristics including maximum ratings, static characteristics, dynamic characteristics, and typical output/transfer characteristics are specified.

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    arduino A1SHB-YANGJING

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    1) The document provides information on the SI2301 P-channel MOSFET from Shenzhen Yangjing Microelectronics. 2) Key features of the SI2301 include a trench gate structure, applications in load switches and DC/DC converters, and markings of A1SHB1. 3) Electrical characteristics including maximum ratings, static characteristics, dynamic characteristics, and typical output/transfer characteristics are specified.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    27 views3 pages

    Arduino A1SHB-YANGJING

    Uploaded by

    Babobrill
    1) The document provides information on the SI2301 P-channel MOSFET from Shenzhen Yangjing Microelectronics. 2) Key features of the SI2301 include a trench gate structure, applications in load switches and DC/DC converters, and markings of A1SHB1. 3) Electrical characteristics including maximum ratings, static characteristics, dynamic characteristics, and typical output/transfer characteristics are specified.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    SHENZHEN YANGJING MICROELECTRONICS CO.

    ,LTD

    SOT-23 Plastic-Encapsulate MOSFETS

    SI2301 P-Channel 20-V(D-S) MOSFET SOT-23

    FEATURE
    1. GATE
    TrenchFET Power MOSFET
    2. SOURCE
    3. DRAIN

    APPLICATIONS
    z Load Switch for Portable Devices
    z DC/DC Converter

    MARKING: A1SHB
    1

    Maximum ratings (Ta=25℃ unless otherwise noted)

    Parameter Symbol Value Unit

    Drain-Source Voltage VDS -20


    V
    Gate-Source Voltage VGS ±8
    Continuous Drain Current ID -2.3
    Pulsed Drain Current IDM -10 A
    Continuous Source-Drain Diode Current IS -0.72
    Maximum Power Dissipation PD 0.35 W
    Thermal Resistance from Junction to Ambient(t ≤5s) R θJA 357 ℃/W
    Junction Temperature TJ 150
    ℃
    Storage Temperature Tstg -55 ~+150

    YANGJING Ｃｏｐｙｒｉｇｈｔ＠２００８ 深圳市龙晶微半导体有限公司


    www.szyangjing.com 粤ＩＣＰ备：第０５８６９８５６４号 4007-888-606 2
    MICROELECTRONICS
    Electrical characteristics (Ta=25℃ unless otherwise noted)

    Parameter Symbol Test Condition Min Typ Max Units


    Static
    Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -20
    V
    Gate-source threshold voltage VGS(th) VDS =VGS, ID =-250µA -0.4 -1
    Gate-source leakage IGSS VDS =0V, VGS =±8V ±100 nA
    Zero gate voltage drain current IDSS VDS =-20V, VGS =0V -1 µA
    VGS =-4.5V, ID =-2.8A 0.090 0.112
    Drain-source on-state resistance a RDS(on) Ω
    VGS =-2.5V, ID =-2.0A 0.110 0.142
    a
    Forward transconductance gfs VDS =-5V, ID =-2.8A 6.5 S
    b
    Dynamic
    Input capacitance Ciss 405
    Output capacitance Coss VDS =-10V,VGS =0V,f =1MHz 75 pF
    Reverse transfer capacitance Crss 55
    VDS =-10V,VGS =-4.5V,ID =-3A 5.5 10
    Total gate charge Qg
    3.3 6
    nC
    Gate-source charge Qgs VDS =-10V,VGS =-2.5V,ID =-3A 0.7
    Gate-drain charge Qgd 1.3
    Gate resistance Rg f =1MHz 6.0 Ω
    Turn-on delay time td(on) 11 20
    VDD=-10V,
    Rise time tr 35 60
    RL=10Ω, ID =-1A, ns
    Turn-off delay time td(off) 30 50
    VGEN=-4.5V,Rg=1Ω
    Fall time tf 10 20
    Drain-source body diode characteristics

    Continuous source-drain diode current IS TC=25℃ -1.3


    A
    a
    Pulse diode forward current ISM -10
    Body diode voltage VSD IS=-0.7A -0.8 -1.2 V
    Notes :
    a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%.
    b.Guaranteed by design, not subject to production testing.

    YANGJING Ｃｏｐｙｒｉｇｈｔ＠２００８ 深圳市龙晶微半导体有限公司


    www.szyangjing.com 粤ＩＣＰ备：第０５８６９８５６４号 4007-888-606 2
    MICROELECTRONICS
    Typical Characteristics SI2301

    Output Characteristics Transfer Characteristics


    -14 -10
    Ta=25℃ VGS= -4.0V,-3.5V,-3.0V,-2.5V Ta=25℃
    Pulsed Pulsed
    -12 VGS=-2.0V
    -8

    -10
    (A)

    (A)
    -6
    ID

    ID
    -8
    DRAIN CURRENT

    DRAIN CURRENT
    -6
    -4
    VGS=-1.5V
    -4

    -2
    -2

    VGS=-1.0V
    -0 -0
    -0 -1 -2 -3 -4 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5

    DRAIN TO SOURCE VOLTAGE VDS (V) GATE TO SOURCE VOLTAGE VGS (V)

    RDS(ON) —— ID RDS(ON) —— VGS


    150 250
    Ta=25℃ Ta=25℃
    Pulsed Pulsed

    120 200
    (mΩ)

    (mΩ)

    VGS=-2.5V
    RDS(ON)

    RDS(ON)

    90 150
    ON-RESISTANCE

    ON-RESISTANCE

    60 VGS=-4.5V 100

    ID=-3.6A

    30 50

    0 0
    -0 -2 -4 -6 -8 -10 -0 -2 -4 -6 -8

    DRAIN CURRENT ID (A) GATE TO SOURCE VOLTAGE VGS (V)

    IS —— VSD
    -1
    Ta=25℃
    Pulsed

    -0.3
    (A)

    -0.1
    IS
    SOURCE CURRENT

    -0.03

    -0.01

    -3E-3

    -1E-3
    -0.2 -0.4 -0.6 -0.8 -1.0 -1.2

    SOURCE TO DRAIN VOLTAGE VSD (V)

    YANGJING Ｃｏｐｙｒｉｇｈｔ＠２００８ 深圳市龙晶微半导体有限公司


    www.szyangjing.com 粤ＩＣＰ备：第０５８６９８５６４号 4007-888-606 2
    MICROELECTRONICS

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