SVD4N65T/SVD4N65F

4A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION

SVD4N65T/F is an N-channel enhancement mode power MOS

field effect transistor which is produced using Silan proprietary
S-RinTM structure DMOS technology. The improved planar stripe
cell and the improved guarding ring terminal have been especially
tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.

FEATURES

∗ 4A,650V,RDS(on) typ =2.3Ω@VGS=10V

∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability

ORDERING SPECIFICATIONS

Part No. Package Marking Shipping

SVD4N65T TO-220-3L SVD4N65T 50Unit/Tube

SVD4N65F TO-220F-3L SVD4N65F 50Unit/Tube

ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)

Parameter Symbol SVD4N65T SVD4N65F Unit

Drain-Source Voltage VDS 650 V
Gate-Source Voltage VGS ±30 V
Drain Current ID 4.0 A
Drain Current Pulsed IDM 16 A
Power Dissipation(TC=25°C) 100 33 W
PD
-Derate above 25°C 0.8 0.26 W/°C
Single Pulsed Avalanche Energy (Note 1) EAS 240 mJ
Repetitive Avalanche Energy EAR 10.6 mJ
Operation Junction Temperature TJ -55 +150 °C
Storage Temperature Tstg -55 +150 °C

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 SVD4N65T/SVD4N65F

THERMAL CHARACTERISTICS

Parameter Symbol SVD4N65T SVD4N65F Unit

Thermal Resistance, Junction-to-Case R JC 1.25 3.79 °C/W
Thermal Resistance, Junction-to-Ambient R JA 62.5 62.5 °C/W

ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted)

Parameter Symbol Test conditions Min. Typ. Max. Unit

Drain -Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 650 -- -- V
Drain-Source Leakage Current IDSS VDS=650V, VGS=0V -- -- 10 µA
Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V -- -- ±100 nA
Gate Threshold Voltage VGS(th) VGS= VDS, ID=250µA 2.0 -- 4.0 V
Static Drain- Source On State
RDS(on) VGS=10V, ID=2A -- 2.3 3.0 Ω
Resistance
Forward Transconductance gFS VDS = 50 V, ID = 2 A -- 5.34 -- S
Input Capacitance Ciss -- 556 710
VDS=25V,VGS=0V,
Output Capacitance Coss -- 50 80 pF
f=1.0MHZ
Reverse Transfer Capacitance Crss -- 3 11
Turn-on Delay Time td(on) -- 20 30
VDD=325V,ID=4.0A,
Turn-on Rise Time tr RG=25Ω -- 19.3 80
ns
Turn-off Delay Time td(off) -- 128 180
(Note 2,3)
Turn-off Fall Time tf -- 20 90

Total Gate Charge Qg VDS=520V,ID=4.0A, -- 15.8 20

Gate-Source Charge Qgs VGS=10V -- 3.5 -- nC

Gate-Drain Charge Qgd (Note 2,3) -- 5.6 --

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Parameter Symbol Test conditions Min. Typ. Max. Unit

Continuous Source Current IS Integral Reverse P-N -- -- 4.0
Junction Diode in the A
Pulsed Source Current ISM -- -- 16
MOSFET
Diode Forward Voltage VSD IS=4.0A,VGS=0V -- -- 1.4 V
Reverse Recovery Time Trr IS=4.0A,VGS=0V, -- 300 -- ns
Reverse Recovery Charge Qrr dIF/dt=100A/µs -- 2.2 -- µC
Notes:
1. L=27.5mH,IAS=4.0A,VDD=50V,RG=25Ω,starting TJ=25°C;
2. Pulse Test: Pulse width 300 s,Duty cycle 2%;
3. Essentially independent of operating temperature.

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 SVD4N65T/SVD4N65F

NOMENCLATURE

TYPICAL CHARACTERISTICS

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 SVD4N65T/SVD4N65F

TYPICAL CHARACTERISTICS (continued)

V GS Gate-Source Voltage [V]

Capasistance [pF]
Drain-Source Breakdown Voltage

Drain-Source On-Resistance
RDS(ON) (Normalized)
BVDSS(Normalized)

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 SVD4N65T/SVD4N65F

TYPICAL TEST CIRCUIT

Gate Charge Test Circuit & Waveform

Same Type
as DUT VGS
Qg
50 10V
V DS
12V 200nF 300nF

Qgs Qgd

VGS

3mA
DUT

Charge

Resistive Switching Test Circuit & Waveform

RL VDS
V DS
90%
VGS
VDD
RG

10%
DUT VGS
10V
td(on) tr
ton td(off) tf
toff

Unclamped Inductive Switching Test Circuit & Waveform

L 1 2 BVDSS
EAS =
2 LIAS BVDSS - VDD
VDS
BVDSS
ID
IAS

RG VDD
ID(t)
10V
DUT V DD VDS(t)
tp
tp Time

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 SVD4N65T/SVD4N65F

PACKAGE OUTLINE

TO-220-3L(One) UNIT:mm

TO-220-3L Two UNIT: mm

6.10~6.80
15.1~15.9

3.95MAX
13.1±0.5

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 SVD4N65T/SVD4N65F

PACKAGE OUTLINE (continued)

TO-220F-3L(One) UNIT:mm

6.70±0.20
A
12.4±0.4

L
12.6~13.8

TO-220F-3L Two UNIT: mm

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