2N7002KW

N-Channel Enhancement
Mode Field Effect
Transistor
Features www.onsemi.com
• Low On−Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance D
• Fast Switching Speed
S
• Low Input/Output Leakage G
• Ultra−Small Surface Mount Package SC−70
3 LEAD
• These Devices are Pb−Free and are RoHS Compliant
CASE 419AB
• ESD HBM = 1000 V as per JESD22 A114 and ESD CDM = 1500 V
as per JESD22 C101
MARKING DIAGRAM
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
7KW
Drain−Source Voltage VDSS 60 V
Gate−Source Voltage VGSS ±20 V
7KW = Specific Device Marking
Maximum Drain Current Continuous ID 310 mA
TJ = 100°C 195 mA
Pulsed 1.2 A
Operating Junction Temperature Range TJ −55 to °C D
+150

Storage Temperature Range TSTG −55 to °C

+150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

G S
THERMAL CHARACTERISTICS
Parameter Symbol Value Unit
Total Device Dissipation PD 300 mW ORDERING INFORMATION†
Derating above TA = 25°C 2.4 mW/°C
Device Package Shipping†
Thermal Resistance, RqJA 410 °C/W
Junction to Ambient* 2N7002KW SC−70 3000 / Tape &
Reel
*Device mounted on FR−4 PCB, 1″ x 0.85″ x 0.062″. Minimum land pad size
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2011 1 Publication Order Number:

May, 2018 − Rev. 1 2N7002KW/D
 2N7002KW

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
BVDSS Drain−Source Breakdown Voltage VGS = 0 V, ID = 10 mA 60 − − V
IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V − − 1.0 mA
VDS = 60 V, VGS = 0 V, TJ = 125°C 0.5 mA
IGSS Gate−Body Leakage VDS = 0 V, VGS = ±20 V − − ±10 mA
ON CHARACTERISTICS (Note 1)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 mA 1.1 − 2.1 V
RDS(on) Static Drain−Source On−Resistance VGS = 10 V, ID = 500 mA − − 1.6 W
VGS = 10 V, ID = 500 mA, TJ = 100°C 2.4
VGS = 5 V, ID = 50 mA 2
VGS = 5 V, ID = 50 mA, TJ = 100°C 3
VDS(on) Drain−Source On−Voltage VGS = 10 V, ID = 500 mA − − 3.75 V
VGS = 5 V, ID = 50 mA 1.5

ID(on) On−State Drain Current VGS = 10 V, VDS = 2 V 500 − − mA

gFS Forward Transconductance VDS = 2 V, ID = 0.2 A 80 − − mS
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz − − 50 pF
Coss Output Capacitance − − 25 pF
Crss Reverse Transfer Capacitance − − 5 pF
SWITCHING CHARACTERISTICS
td(on) Turn-On Delay Time VDD = 30 V, RL = 150 W, VGS = 10 V, − − 20 ns
ID = 200 mA, RGEN = 25 W
td(off) Turn-Off Delay Time − − 60 ns
DRAIN−SOURCE DIODE CHARACTERISTICS
IS Maximum Continuous Drain−Source Diode Forward Current − − 115 mA
ISM Maximum Pulsed Drain−Source Diode Forward Current − − 0.8 A
VSD Drain−Source Diode Forward Voltage VGS = 0 V, IS = 115 mA − − 1.1 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.

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 2N7002KW

TYPICAL PERFORMANCE CHARACTERISTICS

2.4 2.2
VGS = 10V

Normalized Drain−Source On−Resistance

2.0
ID. Drain−Source Current (A)
2.1 9V
8V 1.8
1.8 6V VGS = 10V
7V
1.6 ID = 500mA

RDS(on) (W)
1.5 5V
1.4
1.2
VGS = 5V
1.2
I D = 50mA
0.9 4V
1.0
0.6
0.8

0.3 VGS = 3V 0.6

0.0 0.4
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 −50 0 50 100 150
VDS. Drain−Source Voltage (V) TJ. Junction Temperature ( C)
o

Figure 1. On−Region Characteristics Figure 2. On−Resistance Variation with

Temperature

3.0 5
VGS = 4V VGS = 10V
Drain−Source On−Resistance

2.5 4.5V 4

Drain−Source On−Resistance
5V VGS = 7V
RDS(on), (W)

(W)

2.0 3
6V
RDS(on)

o
TA = 125 C
1.5 2

o
TA = 25 C
10V
9V
1.0 8V 1

o
TA = −55 C
0.5 0
0.0 0.5 1.0 1.5 2.0 0.0 0.5 1.0 1.5 2.0
ID. Drain−Source Current(A) ID. Drain Current (A)

Figure 3. On−Resistance Variation with Gate Figure 4. On−Resistance Variation with Drain
Voltage and Drain Current Current and Temperature
Normalized Gate−Source Threshold Voltage (V)

3.5 1.10
VDS = 10V VDS = VGS
o
TA = −55( C)
3.0 1.05
ID. Drain−Source Current (A)

o
TA = 25( C)
2.5 1.00

ID = 1mA
2.0 0.95
Vth.

o
TA = 125( C)
1.5 0.90 ID = 0.25mA

1.0 0.85

0.5 0.80

0.0 0.75
0 1 2 3 4 5 6 7 8 9 10 −25 0 25 50 75 100 125
o
VGS. Gate−Source Voltage (V) TJ. Junction Temperature ( C)

Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with

Temperature

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 2N7002KW

TYPICAL PERFORMANCE CHARACTERISTICS

1.100 10000
VGS = 0 V
Drain Source Breakdown Voltage
1.075 ID=250uA

IS. Reverse Drain Current [mA]

1000
1.050
BVdss , Normalized

1.025 100
o
TA=125 C
1.000
10
o
0.975
TA=25 C

1
0.950
o
TA=−55 C
0.925
−25 0 25 50 75 100 125 0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
o
TJ, Junction Temperatture( C) VSD. Body Diode Forward Voltage [V]

Figure 7. Breakdown Voltage Variation with Figure 8. Body Diode Forward Voltage
Temperature Variation with Source Current and
Temperature

100 10
VDS = 25V
CISS, COSS, CRSS . Capacitance (pF)

VGS. Gate−Source Voltage (V)

8

CISS

10

4
ID = 500mA

COSS

2
f = 1MHZ CRSS ID = 115mA ID = 280mA
VGS = 0V
1 0
1 10 100 0.0 0.2 0.4 0.6 0.8 1.0
VDS. Drain to Source Voltage (V) Qg. Gate Charge (nC)

Figure 9. Capacitance Variation Figure 10. Gate Charge Characteristics

r(t), Normalized Transient Thermal Resistance

0
10
100ms 50%
1ms
ID, Drain Current [A]

−1 10ms Rthja(t)=r(t)*Rthja
10 100ms 20% o
Rthja=410 C/W
1S
RDS(on) Limit DC
0.1 10%
−2
10
5%

Vgs=10V
−3 2%
10 Single Pulse
o
Rthja=410 C/W D=1%
o
Ta = 25 C
Single Pulse
−4
10 0.01
−1 0 1 2
10 10 10 10 1E−4 1E−3 0.01 0.1 1 10 100 1000

VDS, Drain−Source Voltage [V] t1, time(sec)

Figure 11. Maximum Safe Operating Area Figure 12. Transient Thermal Response Curve

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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

SC−70, 3 Lead, 1.25x2

CASE 419AB−01
ISSUE O
DATE 19 DEC 2008

SYMBOL MIN NOM MAX

D
A 0.80 1.10
A1 0.00 0.10
A2 0.80 0.90 1.00
b 0.15 0.30
c 0.08 0.22
E1 E D 1.80 2.00 2.20
E 1.80 2.10 2.40
E1 1.15 1.25 1.35
e 0.65 BSC
L 0.26 0.36 0.46
e e
L1 0.42 REF
L2 0.15 BSC
TOP VIEW
θ 0º 8º
θ1 4º 10º

q1

A2 A
q

L
b
q1 A1 L1 c L2

SIDE VIEW END VIEW

Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC MO-203.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON34256E Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: SC−70, 3 LEAD, 1.25X2 PAGE 1 OF 1

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