EMF90P02A

P‐Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: D
BVDSS ‐20V
RDSON (MAX.) 90mΩ
ID ‐10A G

S
Pb‐Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT

Gate‐Source Voltage VGS ±12 V

TC = 25 °C ‐10
Continuous Drain Current ID
TC = 100 °C ‐6.5 A

Pulsed Drain Current1 IDM ‐40

TC = 25 °C 25
Power Dissipation PD W
TC = 100 °C 10

Operating Junction & Storage Temperature Range Tj, Tstg ‐55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNIT

Junction‐to‐Case RJC 5
°C / W
Junction‐to‐Ambient RJA 110
1
Pulse width limited by maximum junction temperature.
2
Duty cycle  1％

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ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)

PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT

MIN TYP MAX

STATIC
Drain‐Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = ‐250A ‐20 V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = ‐250A ‐0.3 ‐0.75 ‐1.2
Gate‐Body Leakage IGSS VDS = 0V, VGS = ±12V ±100 nA
Zero Gate Voltage Drain Current IDSS VDS = ‐16V, VGS = 0V ‐1 A
VDS = ‐16V, VGS = 0V, TJ = 125 °C ‐25
On‐State Drain Current1 ID(ON) VDS = ‐5V, VGS = ‐4.5V ‐10 A
1
Drain‐Source On‐State Resistance RDS(ON) VGS = ‐4.5V, ID = ‐6A 72 90
mΩ
VGS = ‐2.5V, ID = ‐3A 120 150
Forward Transconductance1 gfs VDS = ‐5V, ID = ‐5A 4.5 S

DYNAMIC
Input Capacitance Ciss 382
Output Capacitance Coss VGS = 0V, VDS = ‐10V, f = 1MHz 70 pF

Reverse Transfer Capacitance Crss 60

1,2
Total Gate Charge Qg 7.2
Gate‐Source Charge 1,2
Qgs VDS = ‐10V, VGS = ‐4.5V, 1.2 nC
ID = ‐6A
Gate‐Drain Charge1,2 Qgd 2.3
Turn‐On Delay Time1,2 td(on) 10
1,2
Rise Time tr VDS = ‐10V, 20 nS
1,2
Turn‐Off Delay Time td(off) ID = ‐1A, VGS = ‐4.5V, RGS = 6Ω 15
Fall Time1,2 tf 12

SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current IS ‐10

A
Pulsed Current3 ISM ‐40
Forward Voltage1 VSD IF = IS, VGS = 0V 1.3 V
1
Pulse test : Pulse Width  300 sec, Duty Cycle  2％.
2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.

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TYPICAL CHARACTERISTICS

Typical output characteristics On‐Resistance Variation with Gate‐Source Voltage

12 0.30
V G = ‐4.5 V
ID = ‐ 3A
0.20
‐4.0V
9
‐I D ‐ Drain Current(A)

0.25

R DS(ON) ‐ On‐Resistance( Ω )
‐3.5V
0.20
6
‐3.0V 0.15
T A = 125°C
3 ‐2.5V 0.10
T A = 25°C
0.05

0 0.00
0 1 2 3 4 5 0 1 2 3 4 5 6 7 8 9 10
‐VDS ‐ Drain‐Source Voltage( V ) ‐ VGS ‐ Gate‐Source Voltage( V )

Normalized on‐Resistance v.s. Junction Temperature Gate Charge Characteristics

1.8 10
I D = ‐3A ID = ‐ 3A
V G = ‐4.5V
1.6
8
‐ V GS ‐ Gate‐Source Voltage( V )
Drain‐Source On‐Resistance

1.4
RDS(on) ‐ Normalized

6
VDS = ‐ 5V
1.2 ‐ 10V
4
1.0

0.8 2

0.6 0
‐50 ‐25 0 25 50 75 100 125 150 0 3 6 9 12 15
TJ ‐ Junction Temperature (° C) Q g ‐ Gate Charge( nC )

Body Diode Forward Voltage Variation with

Capacitance Characteristics Source Current and Temperature
600 10
f =1MHz
VGS=0 V V GS= 0V
‐Is ‐ Reverse Drain Current(A)

500
1 T A = 125° C

400
Capacitance( pF )

Ciss
0.1
300

25° C ‐55° C
200
0.01

100 Coss 0.001

Crss
0
0 5 10 15 20
‐ VDS , Drain‐Source Voltage( V )
0.0001
0 0.2 0.4 0.6 0.8 1.0 1.2
‐VSD‐ Body Diode Forward Voltage(V)

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Gate Threshold Voltage v.s. Junction Temperature Maximum Drain Current v.s. Case Temperature
1.5 10
‐VGS(th) ‐Gate Threshold V oltage(V)

1.25
8

1.0

‐ID ,Drain Current

6
0.75

4
0.50

2
0.25

0 0
‐50 0 50 100 150 25 50 75 100 125 150
TJ ‐ Junction Temperature (° C) TC ‐ Case Temperature (° C)

Maximum Safe Operating Area

Typical Power Dissipation 100
30

25 R DS(ON) Limit
100s
‐I D ‐ Drain Current(A)

20 1ms

10ms
10
PD (W)

15

100ms
10

R JC= 5° C/W
5 VGS = ‐4.5V
Single Pulse
0 TC = 25° C
1
0 50 100 150 1 10 100
TC , Case Temperature ‐VDS ‐ Drain‐Source Voltage(V)

Effective Transient Thermal Impedance

1

Duty Cycle = 0.5

Normalized Thermal Response(Rthjc)

0.2

0.1 Notes:
0.1
0.05 PDM

t1
0.02 t2 t1
1.Duty Cycle,D =
t2
2.RθJC =5° C/W
0.01
Single Pulse 3.TJ ‐ TC = P * RθJC(t)

4.RθJC (t)=r(t) * RθJC

0.01
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width(ms)

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Ordering & Marking Information:

Device Name: EMF90P02A for DPAK (TO‐252)

F90 F90P02: Device Name

P02
ABCDEFG ABCDEFG: Date Code

Outline Drawing

E A
E2 C
L
D2
D

B2
H
L2

B1
D3

L1

P B L3
A1

Dimension A A1 B B1 B2 C D D2 D3 E E2 H L L1 L2 L3 P

Min. 2.10 0.95 0.30 0.40 0.60 0.40 5.30 6.70 2.20 6.40 4.80 9.20 0.89 0.90 0.50 0.00 2.10

Max. 2.50 1.30 0.85 0.94 1.00 0.60 6.20 7.30 3.00 6.70 5.45 10.15 1.70 1.65 1.10 0.30 2.50

Footprint

7.00
7.00
2.00

1.50
2.50

2.3 2.3

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