2SK1317

Silicon N Channel MOS FET

REJ03G0929-0200
(Previous: ADE-208-1268)
Rev.2.00
Sep 07, 2005

Application
High speed power switching

Features
• High breakdown voltage VDSS = 1500 V
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator, DC-DC converter and motor driver

Outline

RENESAS Package code: PRSS0004ZE-A

(Package name: TO-3P)

1. Gate
G 2. Drain
(Flange)
3. Source

1 S
2
3

Rev.2.00 Sep 07, 2005 page 1 of 6

2SK1317

Absolute Maximum Ratings

(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 1500 V
Gate to source voltage VGSS ±20 V
Drain current ID 2.5 A
*1
Drain peak current ID(pulse) 7 A
Body to drain diode reverse drain current IDR 2.5 A
*2
Channel dissipation Pch 100 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C

Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V(BR)DSS 1500 — — V ID = 10 mA, VGS = 0
Gate to source leak current IGSS — — ±1 µA VGS = ±20 V, VDS = 0
Zero gate voltage drain current IDSS — — 500 µA VDS = 1200 V, VGS = 0
Gate to source cutoff voltage VGS(off) 2.0 — 4.0 V ID = 1 mA, VDS = 10 V
Ω
3
Static drain to source on state RDS(on) — 9 12 ID = 2 A, VGS = 15 V *
resistance
3
Forward transfer admittance |yfs| 0.45 0.75 — S ID = 1 A, VDS = 20 V *
Input capacitance Ciss — 990 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 125 — pF f = 1 MHz
Reverse transfer capacitance Crss — 60 — pF
Turn-on delay time td(on) — 17 — ns ID = 2 A, VGS = 10 V,
Rise time tr — 70 — ns RL = 15 Ω
Turn-off delay time td(off) — 110 — ns
Fall time tf — 60 — ns
Body to drain diode forward voltage VDF — 0.9 — V IF = 2 A, VGS = 0
Body to drain diode reverse recovery trr — 1750 — ns IF = 2 A, VGS = 0,
time diF/dt = 100 A/µs
Note: 3. Pulse test

Rev.2.00 Sep 07, 2005 page 2 of 6

2SK1317

Main Characteristics

Power vs. Temperature Derating Maximum Safe Operation Area

120 10
10
µs
Channel Dissipation Pch (W)

10
3 0
PW µs

Drain Current ID (A)

1
D = m
C 10 s
80 1.0 O
pe m
ra s
tio (1
n Sh
0.3 (T ot
C = )
25
40 0.1 °C
)
Operation in this area
is limited by RDS (on)
0.03
Ta = 25°C
0.01
0 50 100 150 10 30 100 300 1,000 3,000 10,000

Case Temperature TC (°C) Drain to Source Voltage VDS (V)

Typical Output Characteristics Typical Transfer Characteristics

5 2.0
15 V 10 V
Pulse Test 8V VDS = 20 V
4 1.6
Drain Current ID (A)
Drain Current ID (A)

Pulse Test
7V
3 1.2

6V
2 0.8 75°C
TC = 25°C
5V –25°C
1 0.4
VGS = 4 V

0 20 40 60 80 100 0 2 4 6 8 10

Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)

Drain to Source Saturation Voltage Static Drain to Source on State

Drain to Source Saturation Voltage VDS (on) (V)

vs. Gate to Source Voltage Resistance vs. Drain Current

RDS (on) (Ω)
Static Drain to Source on State Resistance

50 50
Pulse Test
40 20
VGS = 10 V
ID = 3 A 15 V
10
30
5
20 2A

2
1A
10 Pulse Test
0.5 A 1.0

0.5
0 4 8 12 16 20 0.1 0.2 0.5 1.0 2 5 10

Gate to Source Voltage VGS (V) Drain Current ID (A)

Rev.2.00 Sep 07, 2005 page 3 of 6

2SK1317

Static Drain to Source on State Forward Transfer Admittance

Resistance vs. Temperature vs. Drain Current
Static Drain to Source on State Resistance
RDS (on) (Ω)

Forward Transfer Admittance yfs (S)

20 10
ID = 2 A VDS = 20 V
VGS = 15 V 5 Pulse Test
16 Pulse Test

0.5 A, 1 A 2 –25°C
12
Ta = 25°C
1.0 75°C
8
0.5

4
0.2

0 0.1
–40 0 40 80 120 160 0.05 0.1 0.2 0.5 1.0 2 5

Case Temperature TC (°C) Drain Current ID (A)

Body to Drain Diode Reverse Typical Capacitance vs.

Recovery Time Drain to Source Voltage

5,000 10,000
Reverse Recovery Time t rr (ns)

VGS = 0
f = 1 MHz
2,000
Capacitance C (pF)

Ciss
1,000 1,000

500

di/dt = 100 A/µs, Ta = 25°C 100 Coss

200
VGS = 0
100 Pulse Test Crss

50 10
0.05 0.1 0.2 0.5 1.0 2 5 0 10 20 30 40 50

Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V)

Dynamic Input Characteristics Switching Characteristics

1,000 20 1,000
Drain to Source Voltage VDS (A)

Gate to Source Voltage VGS (V)

•
VGS = 10 V VDD = 30 V •

VDD = 250 V 500 PW = 2 µs, duty < 1%

800 16
Switching Time t (ns)

400 V
600 V td (off)
VGS 200
600 12
VDS
100
8 tf
400
50
VDD = 600 V tr
200 400 V 4
20 td (on)
250 V ID = 2.5 A

0 10
0 20 40 60 80 100 0.05 0.1 0.2 0.5 1.0 2 5

Gate Charge Qg (nc) Drain Current ID (A)

Rev.2.00 Sep 07, 2005 page 4 of 6

2SK1317

Reverse Drain Current vs.

Source to Drain Voltage
5

Reverse Drain Current IDR (A)

Pulse Test
4

1
10 V, 15 V
VGS = 0, –5 V
0
0 0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage VSD (V)

Normalized Transient Thermal Impedance γS (t)

Normalized Transient Thermal Impedance vs. Pulse Width

3
TC = 25°C
D=1
1.0
0.5

0.3 0.2
θch–c (t) = γS (t) • θch–c
0.1
0.1 θch–c = 1.25°C/W, TC = 25°C
0.05
PDM
0.02
0.03 D = PW
0.01 Pulse PW T
hot T
1S
0.01
10 µ 100 µ 1m 10 m 100 m 1 10

Pulse Width PW (S)

Switching Time Test Circuit Waveforms

Vin Monitor 90%

Vout Monitor
Vin 10%
D.U.T
RL Vout 10% 10%

50 Ω
Vin VDD 90% 90%
10 V = 30 V td (on) tr td (off) tf

Rev.2.00 Sep 07, 2005 page 5 of 6

2SK1317

Package Dimensions
JEITA Package Code RENESAS Code Package Name MASS[Typ.]
SC-65 PRSS0004ZE-A TO-3P / TO-3PV 5.0g
Unit: mm

5.0 ± 0.3
15.6 ± 0.3 4.8 ± 0.2
φ3.2 ± 0.2 1.5

1.0
0.5

19.9 ± 0.2
14.9 ± 0.2

0.3
2.0
1.6

1.4 Max 2.0

2.8

18.0 ± 0.5

1.0 ± 0.2 0.6 ± 0.2

3.6 0.9
1.0

5.45 ± 0.5 5.45 ± 0.5

Ordering Information
Part Name Quantity Shipping Container
2SK1317-E 360 pcs Box (Tube)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.

Rev.2.00 Sep 07, 2005 page 6 of 6

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