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    22216-2023-Winter-Question-Paper (Msbte Study Resources)

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    22216-2023-Winter-Question-Paper (Msbte Study Resources)

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    rampatil290905
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    22216-2023-Winter-question-paper[Msbte

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    22216-2023-Winter-question-paper[Msbte study resources]

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    22216-2023-Winter-question-paper[Msbte

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    22216-2023-Winter-Question-Paper (Msbte Study Resources)

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    rampatil290905
    22216-2023-Winter-question-paper[Msbte

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    of 4

    23124

    22216
    3 Hours / 70 Marks Seat No.

    Instructions : (1) All Questions are compulsory.

    (2) Answer each next main Question on a new page.

    (3) Illustrate your answers with neat sketches wherever necessary.

    (4) Figures to the right indicate full marks.

    (5) Mobile Phone, Pager and any other Electronic Communication


    devices are not permissible in Examination Hall.

    Marks

    1. Attempt any FIVE of the following : 10

    (a) List semiconductor materials used in LED.

    (b) State any two advantages of FET.

    (c) Draw symbols of NPN and PNP transistor.

    (d) Draw transfer characteristics of N-channel JFET.

    (e) Define Line and Load regulation.

    (f) Draw the circuit diagram of a transistorized shunt regulator.

    (g) Write any two applications of Photo diode.

    [1 of 4] P.T.O.
    22216 [2 of 4]
    2. Attempt any THREE of the following : 12

    (a) Compare PN junction diode and Zener diode based on symbol, biasing,
    doping and application.

    (b) The common base dc current gain () of a transistor is 0.967. If the emitter
    current is 10 mA, calculate the value of base current.

    (c) Draw the block diagram of regulated power supply. Explain each block.

    (d) Draw the circuit diagram of a transistor in CE configuration. Sketch the output
    characteristics and indicate active, saturation and cutoff region.

    3. Attempt any THREE of the following : 12

    (a) Describe the working of center-tap full wave rectifier with circuit diagram and
    input/output waveforms.

    (b) Compare half wave rectifier and bridge rectifier based on (i) No. of diodes
    (ii) Ripple factor (iii) Ripple frequency (iv) Waveform.

    (c) Compare BJT and FET (any four points).

    (d) Compare transistorized series and shunt regulator based on (i) Control
    element (ii) Output impedance (iii) Voltage regulation (iv) Application.

    4. Attempt any THREE of the following : 12

    (a) Draw half wave rectifier with filter. Also draw its input and output
    waveforms.

    (b) With the help of neat diagram, explain voltage divider biasing of a transistor.

    (c) Derive the relationship between  and  of a transistor.


    22216 [3 of 4]
    (d) For a JFET, the maximum value of drain current IDSS = 6 mA and pinch off

    voltage VP = –4.5 V. Determine ID at VGS = –2 V.

    (e) For the circuit shown in figure calculate :

    (i) Output voltage

    (ii) The current through Zener diode, Refer Figure (1).

    Figure (1)

    5. Attempt any TWO of the following : 12

    (a) Describe the working of N-channel E-MOSFET with neat constructional


    diagram and VI characteristics.

    (b) A full wave bridge rectifier has 230 Vrms sinusoidal input voltage with load

    resistance of 1 k. If the supply frequency is 50 Hz and turns ratio of a


    transformer is 10 : 1, calculate (i) VDC (ii) IDC (iii) PIV.

    (c) Draw experimental setup to get VI characteristics of PN junction diode. Draw


    neat and labelled VI characteristics and explain briefly.

    6. Attempt any TWO of the following : 12

    (a) Compare LED and photo diode based on (i) Symbol (ii) Working principle
    (iii) Biasing (iv) Applications (two) (v) Semiconductor material used.

    (b) Compare CB, CE and CC configurations (any six points).


    P.T.O.
    22216 [4 of 4]
    (c) Identify the given circuits shown in Figure 2(a) and Figure 2(b). Draw input and
    output voltage waveforms for the following circuits. (Refer Figure 2(a) & 2(b))

    Figure (2a)

    Figure (2b)

    _______________

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