PD-91279E

IRF3205
HEXFET® Power MOSFET
Advanced Process Technology D
Ultra Low On-Resistance VDSS = 55V
Dynamic dv/dt Rating
175°C Operating Temperature RDS(on) = 8.0mΩ
Fast Switching G

Fully Avalanche Rated ID = 110A

S
Description
Advanced HEXFET® Power MOSFETs
from International Rectifier utilize
advanced processing techniques to
achieve extremely low on-resistance per
silicon area. This benefit, combined with
the fast switching speed and ruggedized
device design that HEXFET power
MOSFETs are well known for, provides
the designer with an extremely efficient
and reliable device for use in a wide
variety of applications. TO-220AB

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the industry.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 110
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 80 A
IDM Pulsed Drain Current 390
PD @TC = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ± 20 V
IAR Avalanche Current 62 A
EAR Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C

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Soldering Temperature, for 10 seconds 300 (1.6mm from case )

Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.75
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62
1
01/25/01

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 8.0 mΩ VGS = 10V, ID = 62ª
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 44 ––– ––– S VDS = 25V, ID = 62ª
––– ––– 25 VDS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V

Qg Total Gate Charge ––– ––– 146 ID = 62ª

Qgs Gate-to-Source Charge ––– ––– 35 nC VDS = 44V
VGS = 10V, See Fig. 6 and 13
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 54
td(on) Turn-On Delay Time ––– 14 ––– VDD = 28V
tr Rise Time ––– 101 ––– ID = 62A
ns RG = 4.5Ω
td(off) Turn-Off Delay Time ––– 50 –––
VGS = 10V, See Fig. 10
tf Fall Time ––– 65 –––
Between lead,
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH from package G

LS Internal Source Inductance ––– 7.5 ––– and center of die contact
D
S

Ciss Input Capacitance ––– 3247 ––– VGS = 0V VDS = 25V ƒ

= 1.0MHz, See Fig. 5
Coss Output Capacitance ––– 781 –––
Crss Reverse Transfer Capacitance ––– 211 ––– pF
EAS Single Pulse Avalanche Energy ––– 1050 264 mJ IAS = 62A, L = 138µH

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

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D
IS Continuous Source Current MOSFET symbol
(Body Diode) ––– ––– 110
showing the
A
ISM Pulsed Source Current integral reverse G
p-n
––– ––– 390 junction diode.
(Body Diode) S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 62A, VGS = 0V
trr Reverse Recovery Time ––– 69 104 ns TJ = 25°C, IF = 62A di/dt
= 100A/µs
Qrr Reverse Recovery Charge ––– 143 215 nC
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by
LS+LD)

1000 VGS
1000 VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V
100 100

4.5V

10 10
4.5 V

20 µs PULSE WIDTH 20µs PULSE WIDTH

TJ = 25 °C TJ = 175°C
1 1
0.1 1 10 100
0.1 1 10 100
Notes: V , Drain-to-Source Voltage (V)DS
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 138µH
RG = 25Ω, IAS = 62A. (See Figure 12)
ISD ≤ 62A, di/dt ≤ 207A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Calculated continuous current based on
maximum allowable junction temperature.
Package limitation current is 75A.
This is a typical value at device destruction
and represents operation outside rated
limits.
This is a calculated value limited to TJ = 175°C.
V , Drain-to-Source Voltage (V)DS

Fig 1. Typical Output

Characteristics
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Fig 2. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

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16
ID = 62 A
V DS = 44V
14 V DS = 27V
V DS = 11V
12

10

0
VDS, Drain-to-Source Voltage (V) 0 20 40 60 80 100 120
Forward Voltage
Q , Total Gate CharGge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-
1000

TJ = 175 ° C
100

10

TJ = 25 ° C
1

V GS = 0 V
0.1
0.2 0.8 1.4 2.0 2.6
V ,Source-to-Drain VoltaSD ge
(V)
Source Voltage

Fig 7. Typical Source-Drain

Diode V , Drain-to-Source VoltaDSge (V)

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120
LIMITED BY PACKAGE
100

80

60

40

20

0
25 50 75 100 125 150 175
Fig 8. Maximum Safe Operating Fig 10a. Switching Time Test Circuit
Area VDS
90%
T , Case TemperatureC( C° )

Fig 9. Maximum Drain Current 10%

VGS
Vs.
td(on) tr td(off) tf
Case Temperature
RD
VDS Fig 10b. Switching Time Waveforms
VGS
D.U.T.
RG
VDD

10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

500
ID
TOP 25A
44A
400 BOTTOM 62A

300

200
+

Fig 12a. Unclamped Inductive Test Circuit

100

V (BR)DSS
tp 0
25 50 75 100 125 150 175

Starting T , Junction TemperatureJ( C°

)

Fig 12c. Maximum Avalanche Energy

I AS Vs. Drain Current

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Fig 12b. Unclamped Inductive Waveforms

QG
10 V
QGS QGD

VG

Charge

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

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Peak Diode Recovery dv/dt Test Circuit

Fig 14. For N-Channel HEXFETS

Package Outline

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IRF3205

TO-220AB Outline
Dimensions are shown in millimeters (inches)
-B-

4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)

LEAD ASSIGNMENTS
1 - GATE 2 - DRAIN
3 - SOURCE 4 - DRAIN

0.55 (.022)
3X
0.46 (.018)

2.92 (.115)
2.64 (.104)

NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

Part Marking Information

TO-220AB
EXAMPLE : THIS IS AN IRF1010

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W ITH ASSEMBLY A LOT CODE 9B1M

INTERNATIONAL PART NUMBER RECTIFIER
LOGO
IRF1010
9246 DATE
9B 1M CODE
ASSEMBLY LOT CODE
(YYW
W)
YY =
YEAR
W W = W EEK

Data and specifications subject to change without notice. This product has been
designed and qualified for the automotive [Q101] market. Qualification Standards
can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales
contact information.01/01

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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/