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ORCIDOlivier Faynot
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2020 – today
- 2021
[c15]Michelly de Souza
, Sylvain Barraud, Mikaël Cassé, Maud Vinet, Olivier Faynot, Marcelo Antonio Pavanello:
Experimental Assessment of Variability in Junctionless Nanowire nMOS Transistors. ESSDERC 2021: 223-226
2010 – 2019
- 2018
- [c14]Yiming Qu, Ran Cheng, Wei Liu, Junkang Li, Bich-Yen Nguyen, Olivier Faynot, Nuo Xu, Bing Chen, Yi Zhao:
Effect of measurement speed (μs-800 ps) on the characterization of reliability behaviors for FDSOI nMOSFETs. IRPS 2018: 6 - 2017
- [j4]Bruna Cardoso Paz, Renan Trevisoli Doria, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Maud Vinet, Olivier Faynot, Marcelo Antonio Pavanello:
Harmonic distortion analysis of triple gate SOI nanowire MOSFETS down to 100 K. Microelectron. Reliab. 79: 111-118 (2017) - 2016
- [j3]Bruna Cardoso Paz, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Olivier Faynot, F. Avila-Herrera, Antonio Cerdeira, Marcelo Antonio Pavanello:
Drain current model for short-channel triple gate junctionless nanowire transistors. Microelectron. Reliab. 63: 1-10 (2016) - [c13]Bruna Cardoso Paz, Marcelo Antonio Pavanello, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Maud Vinet, Olivier Faynot:
Analog performance of strained SOI nanowires down to 10K. ESSDERC 2016: 222-225 - [c12]Maud Vinet, Perrine Batude, Claire Fenouillet-Béranger, Laurent Brunet, Vincent Mazzocchi, Cao-Minh Vincent Lu, Fabien Deprat, Jessy Micout, Bernard Previtali, Paul Besombes, Nils Rambal, François Andrieu, Olivier Billoint, Melanie Brocard, Sébastien Thuries, Guillaume Berhault, Cristiano Lopes Dos Santos, Gerald Cibrario, Fabien Clermidy, Daniel Gitlin, Olivier Faynot:
Opportunities brought by sequential 3D CoolCube™ integration. ESSDERC 2016: 226-229 - 2015
- [c11]Olivier Billoint, Hossam Sarhan, Iyad Rayane, Maud Vinet, Perrine Batude, Claire Fenouillet-Béranger, Olivier Rozeau, Gerald Cibrario, Fabien Deprat, A. Fustier, Julien Michallet, Olivier Faynot, Ogun Turkyilmaz, Jean-Frédéric Christmann, Sébastien Thuries, Fabien Clermidy:
A comprehensive study of monolithic 3D cell on cell design using commercial 2D tool. DATE 2015: 1192-1196 - [c10]J. Pelloux-Prayer, Mikaël Cassé, François Triozon, Sylvain Barraud, Yann-Michel Niquet, J.-L. Rouviere, Olivier Faynot, Gilles Reimbold:
Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model. ESSDERC 2015: 210-213 - [c9]Guillaume Besnard, Xavier Garros, Alexandre Subirats, François Andrieu, X. Federspiel, M. Rafik, Walter Schwarzenbach, Gilles Reimbold, Olivier Faynot, Sorin Cristoloveanu:
Performance and reliability of strained SOI transistors for advanced planar FDSOI technology. IRPS 2015: 2 - 2014
- [c8]François Andrieu, Mikaël Cassé, E. Baylac, P. Perreau, O. Nier, Denis Rideau, R. Berthelon, Franck Pourchon, A. Pofelski, Barbara De Salvo, C. Gallon, Vincent Mazzocchi, D. Barge, C. Gaumer, O. Gourhant, A. Cros, Vincent Barral, Rossella Ranica, Nicolas Planes, Walter Schwarzenbach, E. Richard, Emmanuel Josse, Olivier Weber, Franck Arnaud, Maud Vinet, Olivier Faynot, Michel Haond:
Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs. ESSDERC 2014: 106-109 - [c7]J. Mazurier, Olivier Weber, François Andrieu, Cyrille Le Royer, Olivier Faynot, Maud Vinet:
Variability of planar Ultra-Thin Body and Buried oxide (UTBB) FDSOI MOSFETs. ICICDT 2014: 1-4 - 2013
- [c6]Remi Coquand, Sylvain Barraud, Mikaël Cassé, Masahiro Koyama, Virginie Maffini-Alvaro, Marie-Pierre Samson, Lucie Tosti, Xavier Mescot, Gérard Ghibaudo, Stéphane Monfray, Frédéric Boeuf, Olivier Faynot, Barbara De Salvo:
Low-temperature transport characteristics in SOI and sSOI nanowires down to 8nm width: Evidence of IDS and mobility oscillations. ESSDERC 2013: 198-201 - 2012
- [j2]J. Mazurier, Olivier Weber, François Andrieu, Alain Toffoli, Olivier Thomas, Fabienne Allain, Jean-Philippe Noel, Marc Belleville, Olivier Faynot, T. Poiroux:
Ultra-Thin Body and Buried Oxide (UTBB) FDSOI Technology with Low Variability and Power Management Capability for 22 nm Node and Below. J. Low Power Electron. 8(1): 125-132 (2012) - [j1]Akiko Ohata, Young-Ho Bae, Sorin Cristoloveanu, Thomas Signamarcheix, J. Widiez, Bruno Ghyselen, Olivier Faynot, Laurent Clavelier:
Deep-amorphization and solid-phase epitaxial regrowth processes for hybrid orientation technologies in SOI MOSFETs with thin body. Microelectron. Reliab. 52(11): 2602-2608 (2012) - [c5]Veeresh Deshpande, Sylvain Barraud, Xavier Jehl, Romain Wacquez, Maud Vinet, Remi Coquand, B. Roche, B. Voisin, François Triozon, C. Vizioz, L. Tosti, Bernard Previtali, P. Perreau, T. Poiroux, Marc Sanquer, Olivier Faynot:
Scaling of Trigate nanowire (NW) MOSFETs Down to 5 nm Width: 300 K transition to Single Electron Transistor, challenges and opportunities. ESSDERC 2012: 121-124 - [c4]Carlos Navarro, Noel Rodriguez, Luca Donetti, Akiko Oliata, Francisco Gámiz, François Andrieu, Olivier Faynot, Claire Fenouillet-Béranger, Sorin Cristoloveanu:
Multibranch mobility characterization: Evidence of carrier mobility enhancement by back-gate biasing in FD-SOI MOSFET. ESSDERC 2012: 209-212 - 2011
- [c3]Shashikanth Bobba, Ashutosh Chakraborty, Olivier Thomas, Perrine Batude, Thomas Ernst, Olivier Faynot, David Z. Pan, Giovanni De Micheli:
CELONCEL: Effective design technique for 3-D monolithic integration targeting high performance integrated circuits. ASP-DAC 2011: 336-343 - [c2]Perrine Batude, Maud Vinet, Arnaud Pouydebasque, Cyrille Le Royer, Bernard Previtali, Claude Tabone, Jean-Michel Hartmann, Loic Sanchez, Laurence Baud, Veronique Carron, Alain Toffoli, Fabienne Allain, Vincent Mazzocchi, Dominique Lafond, Simon Deleonibus, Olivier Faynot:
3D monolithic integration. ISCAS 2011: 2233-2236
2000 – 2009
- 2009
- [c1]Claire Fenouillet-Béranger, P. Perreau, S. Denorme, L. Tosti, François Andrieu, Olivier Weber, S. Barnola, C. Arvet, Y. Campidelli, Sébastien Haendler, R. Beneyton, C. Perrot, C. de Buttet, P. Gros, Loan Pham-Nguyen, F. Leverd, P. Gouraud, F. Abbate, F. Baron, A. Torres, C. Laviron, L. Pinzelli, J. Vetier, C. Borowiak, A. Margain, D. Delprat, F. Boedt, Konstantin Bourdelle, Bich-Yen Nguyen, Olivier Faynot, Thomas Skotnicki:
Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below. ESSCIRC 2009: 88-91
Coauthor Index
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