Scribd Logo
Upload

Welcome to Scribd!

  • 84 views

    Scaling of Mosfet

    Uploaded by

    Saumitra Tripathi
    This document summarizes scaling of MOSFETs. It discusses how scaling affects various aspects of MOSFET operation including threshold voltage, subthreshold characteristics, mobility, and short channel effects. It describes different scaling techniques such as constant voltage scaling and constant field scaling. Constant field scaling aims to maintain constant electric fields during scaling by reducing all dimensions and voltages by the same factor. However, further issues arise during scaling such as hot carrier effects, drain induced barrier lowering, and increased statistical variations. Solutions to some of these problems include lightly doped drains, halo implants, and increased channel doping.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    Scaling of Mosfet

    Uploaded by

    Saumitra Tripathi
    84 views40 pages
    This document summarizes scaling of MOSFETs. It discusses how scaling affects various aspects of MOSFET operation including threshold voltage, subthreshold characteristics, mobility, and short channel effects. It describes different scaling techniques such as constant voltage scaling and constant field scaling. Constant field scaling aims to maintain constant electric fields during scaling by reducing all dimensions and voltages by the same factor. However, further issues arise during scaling such as hot carrier effects, drain induced barrier lowering, and increased statistical variations. Solutions to some of these problems include lightly doped drains, halo implants, and increased channel doping.

    Original Description:

    Mosfet Scaling

    Copyright

    © Attribution Non-Commercial (BY-NC)

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document summarizes scaling of MOSFETs. It discusses how scaling affects various aspects of MOSFET operation including threshold voltage, subthreshold characteristics, mobility, and short channel effects. It describes different scaling techniques such as constant voltage scaling and constant field scaling. Constant field scaling aims to maintain constant electric fields during scaling by reducing all dimensions and voltages by the same factor. However, further issues arise during scaling such as hot carrier effects, drain induced barrier lowering, and increased statistical variations. Solutions to some of these problems include lightly doped drains, halo implants, and increased channel doping.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    84 views40 pages

    Scaling of Mosfet

    Uploaded by

    Saumitra Tripathi
    This document summarizes scaling of MOSFETs. It discusses how scaling affects various aspects of MOSFET operation including threshold voltage, subthreshold characteristics, mobility, and short channel effects. It describes different scaling techniques such as constant voltage scaling and constant field scaling. Constant field scaling aims to maintain constant electric fields during scaling by reducing all dimensions and voltages by the same factor. However, further issues arise during scaling such as hot carrier effects, drain induced barrier lowering, and increased statistical variations. Solutions to some of these problems include lightly doped drains, halo implants, and increased channel doping.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 40
    At a glance
    Powered by AI
    Some of the key takeaways from scaling MOSFETs include decreasing transistor size and capacitance while increasing clock speeds through scaling. However, scaling also leads to increased power density, hot carrier effects, and greater statistical variations in transistor characteristics.

    Scaling transistors through reducing dimensions leads to unchanged drain current but decreased capacitance, enabling higher clock speeds. However, it also increases power density and electric fields. To maintain performance, supply voltage must scale slower than dimensions through √k scaling, increasing power consumption.

    Challenges during scaling include hot carrier effects, drain induced barrier lowering, gate induced drain leakage, and increased statistical variations in transistor properties. These effects degrade transistor performance at small scales.

    Scaling of MOSFETs

    Siva Theja M Department of Electrical Engineering IIT Madras Advisor: Prof Amitava Das Gupta

    Indo German Winter Academy 2006 11th December 2006, Digha

    Overview
    MOS Capacitor and MOSFET Mobility Models Subthreshold Conduction Scaling Problems arising during Scaling

    3/8/2007

    Scaling of MOSFETs

    MOS Capacitor
    Accumulation Depletion Inversion Strong inversion

    3/8/2007

    Scaling of MOSFETs

    MOS Capacitor
    Threshold voltage

    Qi Qd VT = ms + 2F C i Ci
    Substrate bias effect or body effect

    Vth = ( 2 B VBS 2 B )

    2 s qN A = Cox

    Gamma is called body effect parameter.


    3/8/2007 Scaling of MOSFETs 4

    MOSFET

    3/8/2007

    Scaling of MOSFETs

    MOSFET
    Gradual channel approximation

    3/8/2007

    Scaling of MOSFETs

    Mobility and Electric Fields


    Dependence of mobility on gate voltage, Transverse electric field Universal mobility Degradation curve

    o = 1 + (VG VT )

    3/8/2007

    Scaling of MOSFETs

    Mobility and Electric Fields


    Dependence of mobility on drain voltage or longitudinal electric field Saturation of velocity ID would be linearly dependent on VG and not quadratically for short channel MOSFETs

    3/8/2007

    Scaling of MOSFETs

    Subthreshold Characteristics
    Z kT ID = (Cd + Cit ) L q
    Ci is gate capacitance Cd is depletion capacitance in the channel Cit is the interface state capacitance
    2

    1 e

    qVD kT

    q (VGkTVT ) cr e

    Cd + Cit cr = 1 + Ci

    3/8/2007

    Scaling of MOSFETs

    Subthreshold Characteristics
    S: Subthreshold slope Small S, better switch

    kT S = 2.3 q
    S depends on

    Cd + Cit 1 + Ci

    Gate thickness Channel doping No. of interface states Trade off in choosing Vth
    3/8/2007 Scaling of MOSFETs 10

    Scaling
    Introduction to scaling Scaling in MOSFETS Why scaling? Moores Law

    3/8/2007

    Scaling of MOSFETs

    11

    Why Scaling?

    3/8/2007

    Scaling of MOSFETs

    12

    Lets Start

    3/8/2007

    Scaling of MOSFETs

    13

    Types of Scaling
    Constant voltage scaling Purely geometrical Only lateral dimensions are reduced Longitudinal electric field increases Can cause break down

    3/8/2007

    Scaling of MOSFETs

    14

    Consequences of Constant Voltage Scaling


    Drain current ID is unchanged Transconductance is unaffected Capacitance CG decreases as k2 Charging time decreases as k2 So, higher clock speeds can be obtained

    3/8/2007

    Scaling of MOSFETs

    15

    Consequences of Constant Voltage Scaling

    3/8/2007

    Scaling of MOSFETs

    16

    Short Channel Effects No longer resembles planar capacitor

    3/8/2007

    Scaling of MOSFETs

    17

    Short Channel Effects


    Change in threshold voltage Clear pinch-off of channel Increased output impedance Increased leakage current (why and its consequences)

    3/8/2007

    Scaling of MOSFETs

    18

    Channel Length Modulation


    ID = IDo (1 + VDS) : Channel length modulation factor

    3/8/2007

    Scaling of MOSFETs

    19

    Solution?
    Scale all dimensions (lateral dimensions also) so that initial field is recreated

    3/8/2007

    Scaling of MOSFETs

    20

    Constant Field Scaling


    All the lengths (LG, Z, dOX) and voltages (VDS, VGS, Vth) are scaled by same factor k Electric field unchanged Punch through effect Sol: Increase doping of acceptor by same factor, k (Scaling of Depletion widths)

    3/8/2007

    Scaling of MOSFETs

    21

    Short Channel Effect


    VT decreases with length for very small geometries Charge sharing between source/drain and gate Roll off Change junction depth

    3/8/2007

    Scaling of MOSFETs

    22

    Short Channel Effect

    3/8/2007

    Scaling of MOSFETs

    23

    Narrow width Effect


    VT goes up as width is reduced Effective depletion charge increased rather than decreased

    3/8/2007

    Scaling of MOSFETs

    24

    Narrow width Effect

    3/8/2007

    Scaling of MOSFETs

    25

    Consequences of Constant Field Scaling


    Assuming VGS = 0

    3/8/2007

    Scaling of MOSFETs

    26

    Consequences of Constant Field Scaling


    ID decreases by the factor k Transconductance is unchanged Static power dissipation of one transistor (IV) is scaled by k2 Dynamic power consumption (P f) is scaled by k2 Power per unit area is unchanged Dynamic power per transistor area, is unchanged Delay (CG / ID) is unchanged PDP is scaled by k2

    3/8/2007

    Scaling of MOSFETs

    27

    But
    We want newer generation of scaled down transistors to work faster So, supply voltage is scaled by and k not k Higher electric fields, Currents and so, lower delay times This increases dynamic power consumption per unit area

    3/8/2007

    Scaling of MOSFETs

    28

    Yet another problem


    Power per device is actually less than k2 Consequently, power per unit area increases Circuits operate slower at high temperatures, and have reduced reliability and shorter lifetimes

    3/8/2007

    Scaling of MOSFETs

    29

    Saturated Velocity Model


    Saturated velocity model for current Same results

    3/8/2007

    Scaling of MOSFETs

    30

    Hot Electron Effects


    High electric field High kinetic energy Hot electrons Gate current, input impedance Oxide charges, interface states Increase of VT Substrate current, impact ionization, output impedance Lightly Doped Drain (LDD)
    3/8/2007 Scaling of MOSFETs 31

    Hot Electron Effects

    3/8/2007

    Scaling of MOSFETs

    32

    Drain-Induced Barrier Lowering

    3/8/2007

    Scaling of MOSFETs

    33

    Drain-Induced Barrier Lowering


    DIBL and punch-through Reverse-bias to substrate High channel doping Anti-punch through implant through out the channel Halo or pocket implants

    3/8/2007

    Scaling of MOSFETs

    34

    Gate- Induced Drain Leakage


    Increase of subthreshold currents for negative gate bias Narrow depletion regions Tunneling Drain doping should be ~1018 cm-3

    3/8/2007

    Scaling of MOSFETs

    35

    Other factors
    Interconnect capacitance Process variations The transistor characteristics become less deterministic, but more statistical. This statistical variation increases design difficulty

    3/8/2007

    Scaling of MOSFETs

    36

    Other factors

    3/8/2007

    Scaling of MOSFETs

    37

    Acknowledgements and References


    Solid State Electronic Devices Ben G. Streetman Semiconductor Devices Amitava Das Gupta and Nandita Das Gupta The Omniscient Google Wikipedia Presentation by E.F.Schubert, Rensselaer Polytechnic Institute Special thanks to my advicer, Prof. A Das Gupta

    3/8/2007

    Scaling of MOSFETs

    38

    Thank You

    3/8/2007

    Scaling of MOSFETs

    39

    Questions ?

    3/8/2007

    Scaling of MOSFETs

    40

    You might also like