Chiller Memory
Chiller Memory
Chiller Memory
M48T02
M48T12
5.0V, 16 Kbit (2Kb x8) TIMEKEEPER
SRAM
Rev 5.0
FEATURES SUMMARY
INTEGRATED, ULTRA LOW POWER SRAM,
REAL TIME CLOCK, AND POWER-FAIL
CONTROL CIRCUIT
BYTEWIDE RAM-LIKE CLOCK ACCESS
BCD CODED YEAR, MONTH, DAY, DATE,
HOURS, MINUTES, AND SECONDS
TYPICAL CLOCK ACCURACY OF 1
MINUTE A MONTH, AT 25C
SOFTWARE CONTROLLED CLOCK
CALIBRATION FOR HIGH ACCURACY
APPLICATIONS
AUTOMATIC POWER-FAIL CHIP
DESELECT AND WRITE PROTECTION
WRITE PROTECT VOLTAGES
(V
PFD
= Power-fail Deselect Voltage):
M48T02: V
CC
= 4.75 to 5.5V
4.5V V
PFD
4.75V
M48T12: V
CC
= 4.5 to 5.5V
4.2V V
PFD
4.5V
SELF-CONTAINED BATTERY AND
CRYSTAL IN THE CAPHAT DIP
PACKAGE
PIN and FUNCTION COMPATIBLE WITH
JEDEC STANDARD 2K x8 SRAMs
RoHS COMPLIANCE
Lead-free components are compliant with the
RoHS Directive.
Figure 1. Package
24
1
PCDIP24 (PC)
Battery/Crystal
CAPHAT
M48T02, M48T12
2/21
TABLE OF CONTENTS
FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Figure 1. Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
TABLE OF CONTENTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
SUMMARY DESCRIPTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Figure 3. DIP Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Figure 4. Block Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
OPERATION MODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Table 2. Operating Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
READ Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 5. READ Mode AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 3. READ Mode AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
WRITE Mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Figure 6. WRITE Enable Controlled, WRITE AC Waveform. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Figure 7. Chip Enable Controlled, WRITE AC Waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 4. WRITE Mode AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Data Retention Mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 8. Checking the BOK Flag Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
CLOCK OPERATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Reading the Clock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Setting the Clock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 5. Register Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Stopping and Starting the Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Calibrating the Clock. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 9. Crystal Accuracy Across Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 10.Clock Calibration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
V
CC
Noise And Negative Going Transients. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 11.Supply Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 6. Absolute Maximum Ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
DC AND AC PARAMETERS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 7. Operating and AC Measurement Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 12.AC Testing Load Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 8. Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 9. DC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 13.Power Down/Up Mode AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 10. Power Down/Up AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3/21
M48T02, M48T12
Table 11. Power Down/Up Trip Points DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
PACKAGE MECHANICAL INFORMATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 14.PCDIP24 24-pin Plastic DIP, battery CAPHAT, Package Outline . . . . . . . . . . . . . . . . 18
Table 12. PCDIP24 24-pin Plastic DIP, battery CAPHAT, Package Mechanical Data. . . . . . . . . 18
PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Table 13. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
REVISION HISTORY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Table 14. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
M48T02, M48T12
4/21
SUMMARY DESCRIPTION
The M48T02/12 TIMEKEEPER
RAM is a 2Kb x 8
non-volatile static RAM and real time clock which
is pin and functional compatible with the DS1642.
A special 24-pin, 600mil DIP CAPHAT package
houses the M48T02/12 silicon with a quartz crystal
and a long life lithium button cell to form a highly
integrated battery backed-up memory and real
time clock solution.
The M48T02/12 button cell has sufficient capacity
and storage life to maintain data and clock func-
tionality for an accumulated time period of at least
10 years in the absence of power over the operat-
ing temperature range.
The M48T02/12 is a non-volatile pin and function
equivalent to any JEDEC standard 2Kb x 8 SRAM.
It also easily fits into many ROM, EPROM, and
EEPROM sockets, providing the non-volatility of
PROMs without any requirement for special
WRITE timing or limitations on the number of
WRITEs that can be performed.
Figure 2. Logic Diagram Table 1. Signal Names
Figure 3. DIP Connections
AI01027
11
A0-A10
W
DQ0-DQ7
V
CC
M48T02
M48T12
G
V
SS
8
E
A0-A10 Address Inputs
DQ0-DQ7 Data Inputs / Outputs
E Chip Enable
G Output Enable
W WRITE Enable
V
CC
Supply Voltage
V
SS
Ground
A1
A0
DQ0
A7
A4
A3
A2
A6
A5
A10
A8
A9
DQ7
W
G
E
DQ5 DQ1
DQ2
DQ3 V
SS
DQ4
DQ6
V
CC
AI01028
M48T02
M48T12
8
1
2
3
4
5
6
7
9
10
11
12
16
15
24
23
22
21
20
19
18
17
14
13
5/21
M48T02, M48T12
Figure 4. Block Diagram
AI01329
LITHIUM
CELL
OSCILLATOR AND
CLOCK CHAIN
V
PFD
V
CC
V
SS
32,768 Hz
CRYSTAL
VOLTAGE SENSE
AND
SWITCHING
CIRCUITRY
8 x 8 BiPORT
SRAM ARRAY
2040 x 8
SRAM ARRAY
A0-A10
DQ0-DQ7
E
W
G
POWER
BOK
M48T02, M48T12
6/21
OPERATION MODES
As Figure 4., page 5 shows, the static memory ar-
ray and the quartz controlled clock oscillator of the
M48T02/12 are integrated on one silicon chip. The
two circuits are interconnected at the upper eight
memory locations to provide user accessible
BYTEWIDE clock information in the bytes with
addresses 7F8h-7FFh. The clock locations con-
tain the year, month, date, day, hour, minute, and
second in 24 hour BCD format. Corrections for 28,
29 (leap year - valid until 2100), 30, and 31 day
months are made automatically.
Byte 7F8h is the clock control register. This byte
controls user access to the clock information and
also stores the clock calibration setting.
The eight clock bytes are not the actual clock
counters themselves; they are memory locations
consisting of BiPORT READ/WRITE memory
cells. The M48T02/12 includes a clock control cir-
cuit which updates the clock bytes with current in-
formation once per second. The information can
be accessed by the user in the same manner as
any other location in the static memory array.
The M48T02/12 also has its own Power-fail Detect
circuit. The control circuitry constantly monitors
the single 5V supply for an out of tolerance condi-
tion. When V
CC
is out of tolerance, the circuit write
protects the SRAM, providing a high degree of
data security in the midst of unpredictable system
operation brought on by low V
CC
. As V
CC
falls be-
low approximately 3V, the control circuitry con-
nects the battery which maintains data and clock
operation until valid power returns.
Table 2. Operating Modes
Note: X = V
IH
or V
IL
; V
SO
= Battery Back-up Switchover Voltage.
1. See Table 11., page 17 for details.
Mode V
CC
E G W DQ0-DQ7 Power
Deselect
4.75 to 5.5V
or
4.5 to 5.5V
V
IH
X X High Z Standby
WRITE V
IL
X V
IL
D
IN
Active
READ V
IL
V
IL
V
IH
D
OUT
Active
READ V
IL
V
IH
V
IH
High Z Active
Deselect
V
SO
to V
PFD
(min)
(1)
X X X High Z CMOS Standby
Deselect
V
SO
(1)
X X X High Z Battery Back-up Mode
7/21
M48T02, M48T12
READ Mode
The M48T02/12 is in the READ Mode whenever W
(WRITE Enable) is high and E (Chip Enable) is
low. The device architecture allows ripple-through
access of data from eight of 16,384 locations in the
static storage array. Thus, the unique address
specified by the 11 Address Inputs defines which
one of the 2,048 bytes of data is to be accessed.
Valid data will be available at the Data I/O pins
within Address Access time (t
AVQV
) after the last
address input signal is stable, providing that the E
and G access times are also satisfied. If the E and
G access times are not met, valid data will be
available after the latter of the Chip Enable Access
time (t
ELQV
) or Output Enable Access time
(t
GLQV
).
The state of the eight three-state Data I/O signals
is controlled by E and G. If the outputs are activat-
ed before t
AVQV
, the data lines will be driven to an
indeterminate state until t
AVQV
. If the Address In-
puts are changed while E and G remain active,
output data will remain valid for Output Data Hold
time (t
AXQX
) but will go indeterminate until the next
Address Access.
Figure 5. READ Mode AC Waveforms
Note: WRITE Enable (W) = High.
Table 3. READ Mode AC Characteristics
Note: 1. Valid for Ambient Operating Temperature: T
A
= 0 to 70C; V
CC
= 4.75 to 5.5V or 4.5 to 5.5V (except where noted).
Symbol
Parameter
(1)
M48T02/M48T12
Unit 70 150 200
Min Max Min Max Min Max
t
AVAV
READ Cycle Time 70 150 200 ns
t
AVQV
Address Valid to Output Valid 70 150 200 ns
t
ELQV
Chip Enable Low to Output Valid 70 150 200 ns
t
GLQV
Output Enable Low to Output Valid 35 75 80 ns
t
ELQX
Chip Enable Low to Output Transition 5 10 10 ns
t
GLQX
Output Enable Low to Output Transition 5 5 5 ns
t
EHQZ
Chip Enable High to Output Hi-Z 25 35 40 ns
t
GHQZ
Output Enable High to Output Hi-Z 25 35 40 ns
t
AXQX
Address Transition to Output Transition 10 5 5 ns
AI01330
tAVAV
tAVQV tAXQX
tELQV
tELQX
tEHQZ
tGLQV
tGLQX
tGHQZ
VALID
A0-A10
E
G
DQ0-DQ7
VALID
M48T02, M48T12
8/21
WRITE Mode
The M48T02/12 is in the WRITE Mode whenever
W and E are active. The start of a WRITE is refer-
enced from the latter occurring falling edge of W or
E. A WRITE is terminated by the earlier rising
edge of W or E. The addresses must be held valid
throughout the cycle. E or W must return high for
a minimum of t
EHAX
from Chip Enable or t
WHAX
from WRITE Enable prior to the initiation of anoth-
er READ or WRITE cycle. Data-in must be valid t
D-
VWH
prior to the end of WRITE and remain valid for
t
WHDX
afterward. G should be kept high during
WRITE cycles to avoid bus contention; although, if
the output bus has been activated by a low on E
and G, a low on W will disable the outputs t
WLQZ
after W falls.
Figure 6. WRITE Enable Controlled, WRITE AC Waveform
Figure 7. Chip Enable Controlled, WRITE AC Waveforms
AI01331
tAVAV
tWHAX
tDVWH
DATA INPUT
A0-A10
E
W
DQ0-DQ7
VALID
tAVWH
tAVEL
tWLWH
tAVWL
tWLQZ
tWHDX
tWHQX
AI01332B
tAVAV
tEHAX
tDVEH
A0-A10
E
W
DQ0-DQ7
VALID
tAVEH
tAVEL
tAVWL
tELEH
tEHDX
DATA INPUT
9/21
M48T02, M48T12
Table 4. WRITE Mode AC Characteristics
Note: 1. Valid for Ambient Operating Temperature: T
A
= 0 to 70C; V
CC
= 4.75 to 5.5V or 4.5 to 5.5V (except where noted).
Symbol
Parameter
(1)
M48T02/M48T12
Unit 70 150 200
Min Max Min Max Min Max
t
AVAV
WRITE Cycle Time 70 150 200 ns
t
AVWL
Address Valid to WRITE Enable Low 0 0 0 ns
t
AVEL
Address Valid to Chip Enable Low 0 0 0 ns
t
WLWH
WRITE Enable Pulse Width 50 90 120 ns
t
ELEH
Chip Enable Low to Chip Enable High 55 90 120 ns
t
WHAX
WRITE Enable High to Address Transition 0 10 10 ns
t
EHAX
Chip Enable High to Address Transition 0 10 10 ns
t
DVWH
Input Valid to WRITE Enable High 30 40 60 ns
t
DVEH
Input Valid to Chip Enable High 30 40 60 ns
t
WHDX
WRITE Enable High to Input Transition 5 5 5 ns
t
EHDX
Chip Enable High to Input Transition 5 5 5 ns
t
WLQZ
WRITE Enable Low to Output Hi-Z 25 50 60 ns
t
AVWH
Address Valid to WRITE Enable High 60 120 140 ns
t
AVEH Address Valid to Chip Enable High 60 120 140 ns
t
WHQX
WRITE Enable High to Output Transition 5 10 10 ns
M48T02, M48T12
10/21
Data Retention Mode
With valid V
CC
applied, the M48T02/12 operates
as a conventional BYTEWIDE static RAM.
Should the supply voltage decay, the RAM will au-
tomatically power-fail deselect, write protecting it-
self when V
CC
falls within the V
PFD
(max), V
PFD
(min) window. All outputs become high imped-
ance, and all inputs are treated as don't care.
Note: A power failure during a WRITE cycle may
corrupt data at the currently addressed location,
but does not jeopardize the rest of the RAM's con-
tent. At voltages below V
PFD
(min), the user can be
assured the memory will be in a write protected
state, provided the V
CC
fall time is not less than t
F
.
The M48T02/12 may respond to transient noise
spikes on V
CC
that reach into the deselect window
during the time the device is sampling V
CC
. There-
fore, decoupling of the power supply lines is rec-
ommended.
The power switching circuit connects external V
CC
to the RAM and disconnects the battery when V
CC
rises above V
SO
. As V
CC
rises, the battery voltage
is checked. If the voltage is too low, an internal
Battery Not OK (BOK) flag will be set. The BOK
flag can be checked after power up. If the BOK flag
is set, the first WRITE attempted will be blocked.
The flag is automatically cleared after the first
WRITE, and normal RAM operation resumes. Fig-
ure 8. illustrates how a BOK check routine could
be structured.
For more information on a Battery Storage Life re-
fer to the Application Note AN1012.
Figure 8. Checking the BOK Flag Status
READ DATA
AT ANY ADDRESS
AI00607
IS DATA
COMPLEMENT
OF FIRST
READ?
(BATTERY OK)
POWER-UP
YES
NO
WRITE DATA
COMPLEMENT BACK
TO SAME ADDRESS
READ DATA
AT SAME
ADDRESS AGAIN
NOTIFY SYSTEM
OF LOW BATTERY
(DATA MAY BE
CORRUPTED)
WRITE ORIGINAL
DATA BACK TO
SAME ADDRESS
(BATTERY LOW)
CONTINUE
11/21
M48T02, M48T12
CLOCK OPERATIONS
Reading the Clock
Updates to the TIMEKEEPER
registers should
be halted before clock data is read to prevent
reading data in transition. The BiPORT TIME-
KEEPER cells in the RAM array are only data reg-
isters and not the actual clock counters, so
updating the registers can be halted without dis-
turbing the clock itself.
Updating is halted when a '1' is written to the
READ Bit, the seventh bit in the control register.
As long as a '1' remains in that position, updating
is halted. After a halt is issued, the registers reflect
the count; that is, the day, date, and the time that
were current at the moment the halt command was
issued.
All of the TIMEKEEPER registers are updated si-
multaneously. A halt will not interrupt an update in
progress. Updating is within a second after the bit
is reset to a '0.'
Setting the Clock
The eighth bit of the control register is the WRITE
Bit. Setting the WRITE Bit to a '1,' like the READ
Bit, halts updates to the TIMEKEEPER registers.
The user can then load them with the correct day,
date, and time data in 24 hour BCD format (on Ta-
ble 5.). Resetting the WRITE Bit to a '0' then trans-
fers the values of all time registers (7F9-7FF) to
the actual TIMEKEEPER counters and allows nor-
mal operation to resume. The FT Bit and the bits
marked as '0' in Table 5. must be written to '0' to
allow for normal TIMEKEEPER and RAM opera-
tion.
See the Application Note AN923, TIMEKEEPER
Calibration.
13/21
M48T02, M48T12
Figure 9. Crystal Accuracy Across Temperature
Figure 10. Clock Calibration
AI02124
-80
-60
-100
-40
-20
0
20
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
F
= -0.038 (T - T
0
)
2
10%
F
ppm
C
2
T
0
= 25 C
ppm
C
AI00594B
NORMAL
POSITIVE
CALIBRATION
NEGATIVE
CALIBRATION
M48T02, M48T12
14/21
V
CC
Noise And Negative Going Transients
I
CC
transients, including those produced by output
switching, can produce voltage fluctuations, re-
sulting in spikes on the V
CC
bus. These transients
can be reduced if capacitors are used to store en-
ergy which stabilizes the V
CC
bus. The energy
stored in the bypass capacitors will be released as
low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic by-
pass capacitor value of 0.1F (as shown in Figure
Figure 11.) is recommended in order to provide the
needed filtering.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate neg-
ative voltage spikes on V
CC
that drive it to values
below V
SS
by as much as one volt. These negative
spikes can cause data corruption in the SRAM
while in battery backup mode. To protect from
these voltage spikes, it is recommended to con-
nect a schottky diode from V
CC
to V
SS
(cathode
connected to V
CC
, anode to V
SS
). Schottky diode
1N5817 is recommended for through hole and
MBRS120T3 is recommended for surface mount.
Figure 11. Supply Voltage Protection
AI02169
V
CC
0.1F DEVICE
V
CC
V
SS
15/21
M48T02, M48T12
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings table may cause
permanent damage to the device. These are
stress ratings only and operation of the device at
these or any other conditions above those indicat-
ed in the Operating sections of this specification is
not implied. Exposure to Absolute Maximum Rat-
ing conditions for extended periods may affect de-
vice reliability. Refer also to the
STMicroelectronics SURE Program and other rel-
evant quality documents.
Table 6. Absolute Maximum Ratings
Note: 1. Soldering temperature not to exceed 260C for 10 seconds (total thermal budget not to exceed 150C for longer than 30 seconds).
CAUTION: Negative undershoots below 0.3V are not allowed on any pin while in the Battery Back-up mode.
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, as well as the DC and AC
characteristics of the device. The parameters in
the following DC and AC Characteristic tables are
derived from tests performed under the Measure-
ment Conditions listed in the relevant tables. De-
signers should check that the operating conditions
in their projects match the measurement condi-
tions when using the quoted parameters.
Table 7. Operating and AC Measurement Conditions
Note: Output Hi-Z is defined as the point where data is no longer driven.
Symbol Parameter Value Unit
T
A
Ambient Operating Temperature 0 to 70 C
T
STG
Storage Temperature (V
CC
Off, Oscillator Off) 40 to 85 C
T
SLD
(1)
Lead Solder Temperature for 10 seconds 260 C
V
IO
Input or Output Voltages 0.3 to 7 V
V
CC
Supply Voltage 0.3 to 7 V
I
O
Output Current 20 mA
P
D
Power Dissipation 1 W
Parameter M48T02 M48T12 Unit
Supply Voltage (V
CC
) 4.75 to 5.5 4.5 to 5.5 V
Ambient Operating Temperature (T
A
) 0 to 70 0 to 70 C
Load Capacitance (C
L
) 100 100 pF
Input Rise and Fall Times 5 5 ns
Input Pulse Voltages 0 to 3 0 to 3 V
Input and Output Timing Ref. Voltages 1.5 1.5 V
M48T02, M48T12
16/21
Figure 12. AC Testing Load Circuit
Table 8. Capacitance
Note: 1. Effective capacitance measured with power supply at 5V. Sampled only, not 100% tested.
2. At 25C, f = 1MHz.
3. Outputs deselected.
Table 9. DC Characteristics
Note: 1. Valid for Ambient Operating Temperature: T
A
= 0 to 70C; V
CC
= 4.75 to 5.5V or 4.5 to 5.5V (except where noted).
2. Outputs deselected.
3. Measured with Control Bits set as follows: R = '1'; W, ST, FT = '0.'
AI01019
5V
OUT
C
L
= 100pF
C
L
includes JIG capacitance
1.8k
DEVICE
UNDER
TEST
1k
Symbol
Parameter
(1,2)
Min Max Unit
C
IN
Input Capacitance 10 pF
C
IO
(3)
Input / Output Capacitance 10 pF
Symbol Parameter
Test Condition
(1)
Min Max Unit
I
LI
Input Leakage Current 0V V
IN
V
CC
1 A
I
LO
(2)
Output Leakage Current 0V V
OUT
V
CC
1 A
I
CC
Supply Current Outputs open 80 mA
I
CC1
(3)
Supply Current (Standby) TTL E = V
IH
3 mA
I
CC2
(3)
Supply Current (Standby) CMOS E = V
CC
0.2V 3 mA
V
IL
Input Low Voltage 0.3 0.8 V
V
IH Input High Voltage 2.2 V
CC
+ 0.3 V
V
OL
Output Low Voltage I
OL
= 2.1mA 0.4 V
V
OH
Output High Voltage I
OH
= 1mA 2.4 V
17/21
M48T02, M48T12
Figure 13. Power Down/Up Mode AC Waveforms
Note: Inputs may or may not be recognized at this time. Caution should be taken to keep E high as V
CC
rises past V
PFD
(min). Some systems
may perform inadvertent WRITE cycles after V
CC
rises above V
PFD
(min) but before normal system operations begin. Even though a
power on reset is being applied to the processor, a reset condition may not occur until after the system clock is running.
Table 10. Power Down/Up AC Characteristics
Note: 1. Valid for Ambient Operating Temperature: T
A
= 0 to 70C; V
CC
= 4.75 to 5.5V or 4.5 to 5.5V (except where noted).
2. V
PFD
(max) to V
PFD
(min) fall time of less than tF may result in deselection/write protection not occurring until 200s after V
CC
pass-
es V
PFD
(min).
3. V
PFD
(min) to V
SS
fall time of less than t
FB
may cause corruption of RAM data.
Table 11. Power Down/Up Trip Points DC Characteristics
Note: 1. All voltages referenced to V
SS
.
2. Valid for Ambient Operating Temperature: T
A
= 0 to 70C; V
CC
= 4.75 to 5.5V or 4.5 to 5.5V (except where noted).
3. At 25C; V
CC
= 0V.
Symbol
Parameter
(1)
Min Max Unit
t
PD
E or W at V
IH
before Power Down 0 s
t
F
(2)
V
PFD
(max) to V
PFD
(min) V
CC
Fall Time 300 s
t
FB
(3)
V
PFD
(min) to V
SS
V
CC
Fall Time 10 s
t
R
V
PFD
(min) to V
PFD
(max) V
CC
Rise Time 0 s
t
RB
V
SS
to V
PFD
(min) V
CC
Rise Time 1 s
t
rec
E or W at V
IH
before Power Up 2 ms
Symbol
Parameter
(1,2)
Min Typ Max Unit
V
PFD
Power-fail Deselect Voltage
M48T02 4.5 4.6 4.75 V
M48T12 4.2 4.3 4.5 V
V
SO
Battery Back-up Switchover Voltage 3.0 V
t
DR
(3)
Expected Data Retention Time 10 YEARS
AI00606
V
CC
INPUTS
(PER CONTROL INPUT)
OUTPUTS
DON'T CARE
HIGH-Z
tF
tFB
tR
trec tPD tRB
tDR
VALID VALID
NOTE
(PER CONTROL INPUT)
RECOGNIZED RECOGNIZED
V
PFD
(max)
V
PFD
(min)
V
SO
M48T02, M48T12
18/21
PACKAGE MECHANICAL INFORMATION
Figure 14. PCDIP24 24-pin Plastic DIP, battery CAPHAT, Package Outline
Note: Drawing is not to scale.
Table 12. PCDIP24 24-pin Plastic DIP, battery CAPHAT, Package Mechanical Data
Symb
mm inches
Typ Min Max Typ Min Max
A 8.89 9.65 0.350 0.380
A1 0.38 0.76 0.015 0.030
A2 8.38 8.89 0.330 0.350
B 0.38 0.53 0.015 0.021
B1 1.14 1.78 0.045 0.070
C 0.20 0.31 0.008 0.012
D 34.29 34.80 1.350 1.370
E 17.83 18.34 0.702 0.722
e1 2.29 2.79 0.090 0.110
e3 25.15 30.73 0.990 1.210
eA 15.24 16.00 0.600 0.630
L 3.05 3.81 0.120 0.150
N 24 24
PCDIP
A2
A1
A
L
B1 B e1
D
E
N
1
C
eA
e3
19/21
M48T02, M48T12
PART NUMBERING
Table 13. Ordering Information Scheme
For other options, or for more information on any aspect of this device, please contact the ST Sales Office
nearest you.
Example: M48T 02 70 PC 1
Device Type
M48T
Supply Voltage and Write Protect Voltage
02 = V
CC
= 4.75 to 5.5V; V
PFD
= 4.5 to 4.75V
12 = V
CC
= 4.5 to 5.5V; V
PFD
= 4.2 to 4.5V
Speed
70 = 100ns (M48T02/12)
150 = 150ns (M48T02/12)
200 = 200ns (M48T02/12)
Package
PC = PCDIP24
Temperature Range
1 = 0 to 70C
Shipping Method
blank = ECOPACK Package, Tubes
M48T02, M48T12
20/21
REVISION HISTORY
Table 14. Document Revision History
Date Rev. # Revision Details
July 2000 1.0 First issue
13-Jul-00 1.1 t
rec
change (Table 10)
07-May-01 2.0 Reformatted; temp. / voltage info. added to tables (Tables 8, 9, 3, 4, 10, 11)
14-May-01 2.1 Note added to Clock Calibration section; table footnote correction (Table 2)
16-Jul-01 2.2 Basic formatting / content changes (Figure 1, Tables 8, 9)
20-May-02 2.3 Add countries to disclaimer
26-Jun-02 2.4 Add footnote to table (Table 11)
28-Mar-03 3.0 v2.2 template applied; test conditions updated (Table 10)
31-Mar-04 4.0 Reformatted; Lead-free (Pb-free) package information update (Table 6, 13)
12-Dec-05 5.0 Updated template, Lead-free text, removed footnote (Table 9, 13)
21/21
M48T02, M48T12
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
2005 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com