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    15A04301 Electronic Devices and Circuits

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    Sivaprasad Reddy
    1. This document is an exam for a B.Tech II Year I Semester course on Electronic Devices and Circuits. It contains 11 questions across 5 units. 2. The questions cover topics like diode resistance, zener vs avalanche breakdown, transistor and JFET symbols, biasing, thermal runaway, transistor and FET models, diode equations, UJT and SCR operation, rectifier circuits, filters, common collector configurations, MOSFET operation, self biasing stability factors, bias stabilization vs compensation, and transistor and FET amplifier analysis using h-parameters and small signal models. 3. Students are required to answer one compulsory question with short responses and questions from all five units for

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    15A04301 Electronic Devices and Circuits

    Uploaded by

    Sivaprasad Reddy
    154 views1 page
    1. This document is an exam for a B.Tech II Year I Semester course on Electronic Devices and Circuits. It contains 11 questions across 5 units. 2. The questions cover topics like diode resistance, zener vs avalanche breakdown, transistor and JFET symbols, biasing, thermal runaway, transistor and FET models, diode equations, UJT and SCR operation, rectifier circuits, filters, common collector configurations, MOSFET operation, self biasing stability factors, bias stabilization vs compensation, and transistor and FET amplifier analysis using h-parameters and small signal models. 3. Students are required to answer one compulsory question with short responses and questions from all five units for

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    1. This document is an exam for a B.Tech II Year I Semester course on Electronic Devices and Circuits. It contains 11 questions across 5 units. 2. The questions cover topics like diode resistance, zener vs avalanche breakdown, transistor and JFET symbols, biasing, thermal runaway, transistor and FET models, diode equations, UJT and SCR operation, rectifier circuits, filters, common collector configurations, MOSFET operation, self biasing stability factors, bias stabilization vs compensation, and transistor and FET amplifier analysis using h-parameters and small signal models. 3. Students are required to answer one compulsory question with short responses and questions from all five units for

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    154 views1 page

    15A04301 Electronic Devices and Circuits

    Uploaded by

    Sivaprasad Reddy
    1. This document is an exam for a B.Tech II Year I Semester course on Electronic Devices and Circuits. It contains 11 questions across 5 units. 2. The questions cover topics like diode resistance, zener vs avalanche breakdown, transistor and JFET symbols, biasing, thermal runaway, transistor and FET models, diode equations, UJT and SCR operation, rectifier circuits, filters, common collector configurations, MOSFET operation, self biasing stability factors, bias stabilization vs compensation, and transistor and FET amplifier analysis using h-parameters and small signal models. 3. Students are required to answer one compulsory question with short responses and questions from all five units for

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 1

    Code: 15A04301 R15

    B.Tech II Year I Semester (R15) Regular Examinations November/December 2016


    ELECTRONIC DEVICES & CIRCUITS
    (Common to EEE, ECE and EIE)
    Time: 3 hours Max. Marks: 70
    PART A
    (Compulsory Question)
    *****
    1 Answer the following: (10 X 02 = 20 Marks)
    (a) Briefly write about diode resistance.
    (b) Write major differences between zener breakdown and avalanche breakdown.
    (c) Define TUF & PIV.
    (d) Define & Classify filters.
    (e) Briefly explain reach through effect.
    (f) Draw the symbols for NPN (BJT), PNP (BJT), N-channel JFET and P-channel JFET.
    (g) What is the importance of biasing?
    (h) Write short notes on thermal runaway.
    (i) Sketch the transistor hybrid model.
    (j) Draw small signal model for FET.
    PART B
    (Answer all five units, 5 X 10 = 50 Marks)
    UNIT I
    2 (a) Derive diode current equation.
    (b) A silicon diode has a saturation current of 7.5 A at room temperature 300 K. Calculate the
    saturation current at 400 K.
    OR
    3 Explain construction and operation of UJT & SCR with necessary diagrams.
    UNIT II
    4 Explain construction and operation of a bridge rectifier and derive its expressions.
    OR
    5 (a) Discuss full wave rectifier with L-section filter.
    (b) Design a filter for full wave rectifier circuit with LC filter to provide an output voltage of 10 V with a
    load of 200 mA and the ripple is limited to 2%.
    UNIT III
    6 Draw and explain characteristics of Common Collector configurations.
    OR
    7 Explain construction and operation of N-channel Enhancement & Depletion mode MOSFET.
    UNIT IV
    8 Why self bias technique is so popular? And derive its three stability factors.
    OR
    9 What is the difference between bias stabilization & bias compensation? And also explain any two
    methods of bias compensation.
    UNIT V
    10 Discuss generalized analysis of transistor amplifier model using h-parameters.
    OR
    11 Discuss generalized analysis of FET amplifier model using small signal model.

    *****

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