Scribd Logo
Upload

Welcome to Scribd!

  • 49 views

    Notes: (No. of Printed Pages-4) ES201 Enrol. No. (ET) End Semester Examination Nov.-Dec., 2016

    Uploaded by

    Ryash Shah
    The document is the question paper for the Basic Electronics Engineering end semester examination. It contains 3 sections with multiple choice and numerical questions. Section A contains 6 questions, attempting 5 is required. Section B contains 3 questions, attempting 2 is required. Section C is compulsory with 2 sub-questions, one on a Zener diode voltage regulator circuit and the other explaining Depletion type MOSFET structure and proving the transconductance equation.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd

    Notes: (No. of Printed Pages-4) ES201 Enrol. No. (ET) End Semester Examination Nov.-Dec., 2016

    Uploaded by

    Ryash Shah
    49 views6 pages
    The document is the question paper for the Basic Electronics Engineering end semester examination. It contains 3 sections with multiple choice and numerical questions. Section A contains 6 questions, attempting 5 is required. Section B contains 3 questions, attempting 2 is required. Section C is compulsory with 2 sub-questions, one on a Zener diode voltage regulator circuit and the other explaining Depletion type MOSFET structure and proving the transconductance equation.

    Original Description:

    mmmm

    Original Title

    kmkmmoooo

    Copyright

    © © All Rights Reserved

    Available Formats

    DOCX, PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    The document is the question paper for the Basic Electronics Engineering end semester examination. It contains 3 sections with multiple choice and numerical questions. Section A contains 6 questions, attempting 5 is required. Section B contains 3 questions, attempting 2 is required. Section C is compulsory with 2 sub-questions, one on a Zener diode voltage regulator circuit and the other explaining Depletion type MOSFET structure and proving the transconductance equation.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    49 views6 pages

    Notes: (No. of Printed Pages-4) ES201 Enrol. No. (ET) End Semester Examination Nov.-Dec., 2016

    Uploaded by

    Ryash Shah
    The document is the question paper for the Basic Electronics Engineering end semester examination. It contains 3 sections with multiple choice and numerical questions. Section A contains 6 questions, attempting 5 is required. Section B contains 3 questions, attempting 2 is required. Section C is compulsory with 2 sub-questions, one on a Zener diode voltage regulator circuit and the other explaining Depletion type MOSFET structure and proving the transconductance equation.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    of 6

    ham' notes

    [No. of Printed Pages-4]

    ES201 Enrol. No. • I . . . . . . . . . . . . .

    [ET]

    END SEMESTER EXAMINATION NOV.-DEC., 2016

    BASIC ELECTRONICS ENGINEERING

    Time 3 Hrs. Maximum Mars : 70

    Note: Attempt questions from all sections as directed.

    SECTION — A (30 Marks)


    Attempt any five questions out of six.
    Each question carries 06 marks.

    1. Define diffusion capacitance of a PN junction


    diode. Obtain an expression for the same: Explain
    V-I Characterstics of PN junction diode.

    2. (a) Draw the output of given clipper circuit


    shown in Figure 1, Diode A is (Si), diode B is
    (Ge). (3)

    Figure 1
    FA ami notes
    2
    (b) Draw the output of given clamper circuit shown
    in Figure 2. (3)

    TIFRE.1
    SINUSOIDALINPUTWAVEFORM

    Figure 2 1,0

    3. State and prove De Morgan's theorem. Draw


    truth table and implement full adder using only
    universal gate NAND.

    4. Draw the circuit diagram of non-inverting


    operational amplifier (OP-AMP) and drive the
    expression for its closed loop voltage gain. Locate the
    virtual ground point in the circuit and explain its
    significance.

    5. Reduce the following function in SOP form


    using K—Map.
    F = E(5,7,8,10,13,15) + Ed(0,1,2,3)
    Implement the simplified function using only NAND
    gate.

    6. Explain the working of common base configuration


    of NPN transistor with the help of circuit diagram.
    Sketch input and output fiaracteristics and indicate
    active, cut-off and saturation region.
    ami notes
    ES201 3

    SECTION — B (20 Marks)


    Attempt any two questions out of three.

    Each question carries 10 marks.

    7. Explain why the operating point is fixed in the


    center
    of active region of transistor characteristics in a good

    voltage amplifier. Determine the values of I cQ and


    VCEQ for the circuit shown in Fig:
    +10.11

    8. Why FET is known as unipolar device ? In a


    common source amplifier drain resistance RD = 51(Q,
    µ = 50 and rd = 351Ca Evaluate voltage gain A v and
    output
    resistance Ro.

    Draw the circuit diagram and explain the working of


    P.T.O.
    differential amplifier. An OP-AMP has a slew rate
    of 1V/i.ts. The input signal changes by 0.5 V in 10
    What can be the closed loop gain of the amplifier ?
    FA ami notes
    ES201 4

    SECTION — C

    (Compulsory)

    10. (a) Show how Zener diode can be used as a voltage


    regulator. In a Zener diode voltage regulator circuit
    the source series resistance Rs. = 20 ohm zener
    voltage Vz = 18 volt and lode resistance R L= 200
    ohm. If source voltage Vs can vary from 20 volt
    to 30 volt find the maximum and minimum current
    i n t h e d i o d e ? ( 1 0 )

    (b) Explain Depletion type MOSFET structure and


    operation with the help of circuit diagram. Prove
    that the transconductance gm of JFET is given by
    gm = 2:\FIT-37,s/Vp (10)

    You might also like