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    Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

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    JOELCIO E TATHY QUADROS DE SOUZA
    This document provides product specifications for the 2SC2365 silicon NPN power transistor from SavantIC Semiconductor. It includes descriptions of the TO-3 package and pin layout, absolute maximum ratings for voltage, current and temperature, typical characteristics including breakdown voltages and current gains, and the package outline dimensions. The transistor is suitable for use in switch-mode power supply systems and can withstand collector-emitter voltages up to 500V and collector currents up to 6A.

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    Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

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    JOELCIO E TATHY QUADROS DE SOUZA
    28 views3 pages
    This document provides product specifications for the 2SC2365 silicon NPN power transistor from SavantIC Semiconductor. It includes descriptions of the TO-3 package and pin layout, absolute maximum ratings for voltage, current and temperature, typical characteristics including breakdown voltages and current gains, and the package outline dimensions. The transistor is suitable for use in switch-mode power supply systems and can withstand collector-emitter voltages up to 500V and collector currents up to 6A.

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    2sc3265

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    This document provides product specifications for the 2SC2365 silicon NPN power transistor from SavantIC Semiconductor. It includes descriptions of the TO-3 package and pin layout, absolute maximum ratings for voltage, current and temperature, typical characteristics including breakdown voltages and current gains, and the package outline dimensions. The transistor is suitable for use in switch-mode power supply systems and can withstand collector-emitter voltages up to 500V and collector currents up to 6A.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    28 views3 pages

    Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

    Uploaded by

    JOELCIO E TATHY QUADROS DE SOUZA
    This document provides product specifications for the 2SC2365 silicon NPN power transistor from SavantIC Semiconductor. It includes descriptions of the TO-3 package and pin layout, absolute maximum ratings for voltage, current and temperature, typical characteristics including breakdown voltages and current gains, and the package outline dimensions. The transistor is suitable for use in switch-mode power supply systems and can withstand collector-emitter voltages up to 500V and collector currents up to 6A.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors 2SC2365

    DESCRIPTION
    ·With TO-3 package
    ·High breakdown voltage

    APPLICATIONS
    ·For use in switch-mode CTV supply
    systems

    PINNING(see Fig.2)

    PIN DESCRIPTION

    1 Base

    2 Emitter

    3 Collector Fig.1 simplified outline (TO-3) and symbol

    Absolute maximum ratings(Ta= )

    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    VCBO Collector-base voltage Open emitter 600 V

    VCEO Collector-emitter voltage Open base 500 V

    VEBO Emitter-base voltage Open collector 6 V

    IC Collector current 6 A

    ICM Collector current-peak 8 A

    PC Collector power dissipation TC=25 50 W

    Tj Junction temperature 150

    Tstg Storage temperature -55~150


    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors 2SC2365

    CHARACTERISTICS
    Tj=25 unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 500 V

    V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V

    VCEsat Collector-emitter saturation voltage IC=4A; IB=1.25A 3.0 V

    VBEsat Base-emitter saturation voltage IC=4A; IB=1.25A 1.6 V

    ICBO Collector cut-off current VCB=600V; IE=0 0.1 mA

    IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA

    hFE DC current gain IC=3A ; VCE=4V 12

    fT Transition frequency IC=0.5A ; VCE=10V 10 MHz

    2
    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors 2SC2365

    PACKAGE OUTLINE

    Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

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