Irf 9640
Irf 9640
Irf 9640
www.vishay.com
Vishay Siliconix
Power MOSFET
S
FEATURES
• Dynamic dV/dt rating
TO-220AB Available
• Repetitive avalanche rated
G
• P-channel Available
• Fast switching
• Ease of paralleling
• Simple drive requirements
S
D • Material categorization: for definitions of compliance
G D
please see www.vishay.com/doc?99912
P-Channel MOSFET Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
PRODUCT SUMMARY example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
VDS (V) -200
RDS(on) (Ω) VGS = -10 V 0.50 DESCRIPTION
Qg max. (nC) 44 Third generation power MOSFETs from Vishay provide the
Qgs (nC) 7.1 designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
Qgd (nC) 27 cost-effectiveness.
Configuration Single The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free IRF9640PbF
Lead (Pb)-free and halogen-free IRF9640PbF-BE3
- 7.0 V
- 6.0 V
- 5.5 V 2.0
(Normalized)
- 5.0 V
101 Bottom - 4.5 V
1.5
1.0
- 4.5 V
0.5
20 µs Pulse Width
TC = 25 °C
100 0.0
100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91086_01 - VDS, Drain-to-Source Voltage (V) 91086_04 TJ, Junction Temperature (°C)
VGS 2400
VGS = 0 V, f = 1 MHz
Top - 15 V Ciss = Cgs + Cgd, Cds Shorted
- 10 V 2000 Crss = Cgd
- 8.0 V
- ID, Drain Current (A)
- 6.0 V 1600
101
- 5.5 V
Ciss
- 5.0 V
Bottom - 4.5 V 1200
800
- 4.5 V
Coss
400
20 µs Pulse Width Crss
TC = 150 °C
100 0
100 101 100 101
91086_02 - VDS, Drain-to-Source Voltage (V) 91086_05 - VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
ID = - 11 A
- VGS, Gate-to-Source Voltage (V)
VDS = - 160 V
16
- ID, Drain Current (A)
100 4
20 µs Pulse Width For test circuit
VDS = - 50 V see figure 13
0
4 5 6 7 8 9 10 0 10 20 30 40 50 60
91086_03 - VGS, Gate-to-Source Voltage (V) 91086_06 QG, Total Gate Charge (nC)
Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage
12
- ISD, Reverse Drain Current (A)
10
25 °C
150 °C 6
100
4
VGS = 0 V
10-1 0
0.0 1.0 2.0 3.0 4.0 5.0 25 50 75 100 125 150
91086_07 - VSD, Source-to-Drain Voltage (V) 91086_09 TC, Case Temperature (°C)
Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature
RD
102 VDS
Operation in this area limited
by RDS(on)
5 VGS
10 µs D.U.T.
- ID, Drain Current (A)
RG -
+VDD
2
100 µs
- 10 V
10
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
5 1 ms
Fig. 10a - Switching Time Test Circuit
2 TC = 25 °C
TJ = 150 °C 10 ms
td(on) tr td(off) tf
Single Pulse VDS
1
2 5 2 5 2 5 10 %
1 10 102 103
10
Thermal Response (ZthJC)
1
D = 0.50
PDM
0.20
0.1 0.10 t1
0.05 t2
Single Pulse Notes:
0.02
(Thermal Response) 1. Duty Factor, D = t1/t2
0.01
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5 10-4 10-3 10-2 0.1 1 10
L IAS
VDS
RG - VDS
D.U.T + VDS
IAS VDD
- 10 V
tp
tp 0.01 Ω
V(BR)DSS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
1600
ID
EAS, Single Pulse Energy (mJ)
Top - 4.9 A
- 7.0 A
1200 Bottom - 11 A
800
400
VDD = - 50 V
0
25 50 75 100 125 150
Current regulator
Same type as D.U.T.
QG 50 kΩ
- 10 V 12 V 0.2 µF
0.3 µF
QGS QGD -
D.U.T. + VDS
VG
VGS
- 3 mA
Charge
IG ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
- - +
Rg • dV/dt controlled by Rg +
• ISD controlled by duty factor “D” VDD
• D.U.T. - device under test -
Note
• Compliment N-Channel of D.U.T. for driver
VGS = - 10 Va
Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
ISD
Ripple ≤ 5 %
Note
a. VGS = - 5 V for logic level and - 3 V drive devices
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91086.
A
E
F
ØP
Q
H(1)
D
1 2 3
L(1)
M*
b(1)
L
C
b
e
J(1)
e(1)
MILLIMETERS INCHES
DIM.
MIN. MAX. MIN. MAX.
A 4.24 4.65 0.167 0.183
b 0.69 1.02 0.027 0.040
b(1) 1.14 1.78 0.045 0.070
c 0.36 0.61 0.014 0.024
D 14.33 15.85 0.564 0.624
E 9.96 10.52 0.392 0.414
e 2.41 2.67 0.095 0.105
e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.10 6.71 0.240 0.264
J(1) 2.41 2.92 0.095 0.115
L 13.36 14.40 0.526 0.567
L(1) 3.33 4.04 0.131 0.159
ØP 3.53 3.94 0.139 0.155
Q 2.54 3.00 0.100 0.118
ECN: E21-0621-Rev. D, 04-Nov-2021
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM
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