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    ELECTRONICS I 304A Ok PDF

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    parupalli1997
    This document is an exam for a third semester electrical and electronics engineering course covering electronics 1. It contains 5 units: 1) PN junction diodes and their characteristics. 2) Rectifier circuits including full wave and half wave. 3) BJT transistor characteristics and calculations in common emitter configuration. 4) Derivation of h-parameters for a BJT. 5) Comparison of JFET and MOSFET, including basic JFET structure and regions of its output characteristics.

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    ELECTRONICS I 304A Ok PDF

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    parupalli1997
    90 views3 pages
    This document is an exam for a third semester electrical and electronics engineering course covering electronics 1. It contains 5 units: 1) PN junction diodes and their characteristics. 2) Rectifier circuits including full wave and half wave. 3) BJT transistor characteristics and calculations in common emitter configuration. 4) Derivation of h-parameters for a BJT. 5) Comparison of JFET and MOSFET, including basic JFET structure and regions of its output characteristics.

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    This document is an exam for a third semester electrical and electronics engineering course covering electronics 1. It contains 5 units: 1) PN junction diodes and their characteristics. 2) Rectifier circuits including full wave and half wave. 3) BJT transistor characteristics and calculations in common emitter configuration. 4) Derivation of h-parameters for a BJT. 5) Comparison of JFET and MOSFET, including basic JFET structure and regions of its output characteristics.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    90 views3 pages

    ELECTRONICS I 304A Ok PDF

    Uploaded by

    parupalli1997
    This document is an exam for a third semester electrical and electronics engineering course covering electronics 1. It contains 5 units: 1) PN junction diodes and their characteristics. 2) Rectifier circuits including full wave and half wave. 3) BJT transistor characteristics and calculations in common emitter configuration. 4) Derivation of h-parameters for a BJT. 5) Comparison of JFET and MOSFET, including basic JFET structure and regions of its output characteristics.

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    © All Rights Reserved
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    Download as pdf or txt
    of 3

    [Nov-14]

    [EUREE-304A]
    B.Tech. Degree Examination
    Electrical & Electronics Engineering
    III SEMESTER
    ELECTRONICS-I
    (Effective from the admitted batch 2012–13)
    Time: 3 Hours Max.Marks: 60
    ------------------------------------------------------------------------------------------------------
    Instructions: Each Unit carries 12 marks.
    Answer all units choosing one question from each unit.
    All parts of the unit must be answered in one place only.
    Figures in the right hand margin indicate marks allotted.
    ------------------------------------------------------------------------------------------------------
    UNIT-I
    1. a) Draw and explain the band structure of a PN junction 6
    b) Draw and explain the V-I characteristics of a PN junction diode
    and explain the nature of curve 6
    OR
    2. a) Derive the phenomenon of diffusion of charge carriers in
    semiconductors 6
    b) Describe the action of PN junction diode under forward bias and
    reverse bias 6
    UNIT-II
    3. a) Draw and explain the circuit diagram of full wave rectifier with
    π-section filter 6
    b) A full wave rectifier with a load resistance of 15 KΩ uses an
    inductor filter of 15 H. The peak value of the applied voltage
    is 250V and frequency is 50 cycles/second. Calculate the DC
    load current; ripple factor and D.C output voltage 6
    OR
    4. a) Draw the circuit for a half wave rectifier and derive the
    expression for (i) the DC current (ii) the DC load voltage
    (iii) the rms current 6
    b) Derive the ripple factor of L-section filter with neat diagrams 6
    UNIT-III
    5. A n-p-n germanium transistor is connected in common emitter
    configuration with resistors R E ,R B and R C in series with the emitter,
    R R R R R R

    base and collector respectively. If h FE =75, V CC =9V, V bb =9V, R E =1 KΩ, R R R R R R R R

    R B =250 KΩ R C =2 KΩ. Then


    R R R R

    a) Determine whether transistor is in active region or in saturation


    region
    b) Calculate the collector voltage
    c) What is the minimum value of h FE that will change the state of R R

    operation 12
    OR
    6. a) Draw and explain the characteristics of a common emitter mode
    for an NPN transistor? 6
    b) Calculate the minimum and maximum values of I C and V CE for R R R R

    the base bias when h FE(min) =50 and h FE(max) =60. For circuit
    R R R R

    V CC =12V, R B =150 KΩ, R C =2 KΩ. Assume silicon transistor


    R R R R R R 6
    UNIT-IV
    7. Derive the CE h-parameters h re and h ie in terms of the CB
    R R R R

    h-parameters 12
    OR
    8. a) Draw the circuit of an emitter follower and list the three most
    important characteristics 6
    b) Derive the expression for A V in terms of A 1 R R R

    6
    R

    UNIT-V
    9. a) Write the difference between JFET and MOSFET 6
    b) Sketch the basic structure of an n-channel junction field effect
    transistor and show the circuit symbol for the JFET 6
    OR
    10. a) Define pinch-off voltage V P and sketch the depletion region
    R R

    before and after pinch-off 6


    b) Explain four distinct regions of output characteristics of a JFET 6

    [05/III S/114]

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