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    Experiment No 2 (Fet)

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    Jaideep Singh
    This document describes an experiment to study the V-I characteristics of a Field Effect Transistor (FET). The experiment involves measuring the drain characteristics and transfer characteristics of an FET by varying the drain-source voltage (VDS) and gate-source voltage (VGS) and recording the drain current (ID). Drain characteristics graphs of ID vs VDS will be plotted for different VGS values. Transfer characteristics graphs of ID vs VGS will also be plotted for different constant VDS values. Careful measurement of the readings and ensuring proper connections are emphasized.

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    © All Rights Reserved
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    Experiment No 2 (Fet)

    Uploaded by

    Jaideep Singh
    3K views4 pages
    This document describes an experiment to study the V-I characteristics of a Field Effect Transistor (FET). The experiment involves measuring the drain characteristics and transfer characteristics of an FET by varying the drain-source voltage (VDS) and gate-source voltage (VGS) and recording the drain current (ID). Drain characteristics graphs of ID vs VDS will be plotted for different VGS values. Transfer characteristics graphs of ID vs VGS will also be plotted for different constant VDS values. Careful measurement of the readings and ensuring proper connections are emphasized.

    Original Description:

    FET Characteristics

    Original Title

    EXPERIMENT NO 2 (FET)

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    This document describes an experiment to study the V-I characteristics of a Field Effect Transistor (FET). The experiment involves measuring the drain characteristics and transfer characteristics of an FET by varying the drain-source voltage (VDS) and gate-source voltage (VGS) and recording the drain current (ID). Drain characteristics graphs of ID vs VDS will be plotted for different VGS values. Transfer characteristics graphs of ID vs VGS will also be plotted for different constant VDS values. Careful measurement of the readings and ensuring proper connections are emphasized.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    3K views4 pages

    Experiment No 2 (Fet)

    Uploaded by

    Jaideep Singh
    This document describes an experiment to study the V-I characteristics of a Field Effect Transistor (FET). The experiment involves measuring the drain characteristics and transfer characteristics of an FET by varying the drain-source voltage (VDS) and gate-source voltage (VGS) and recording the drain current (ID). Drain characteristics graphs of ID vs VDS will be plotted for different VGS values. Transfer characteristics graphs of ID vs VGS will also be plotted for different constant VDS values. Careful measurement of the readings and ensuring proper connections are emphasized.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    of 4

    UEE505: ANALOG AND DIGITAL SYSTEMS

    EXPERIMENT NO: 2

    AIM: Study of V-I characteristics Field Effect Transistor (FET).

    APPRATUS: FET Characteristic Kit, Connecting Leads.

    THEORY:
    FIELD EFFECT TRANSISTOR (FET)

    The Field Effect Transistor or Junction Field Effect Transistor is fabricated by using monolithic

    silicon technology. This device comprises of high input resistance as compared to bipolar

    transistor. FET's are mainly of two types:

    1. Junction Field Effect Transistor (JFET)

    2. Metal-Oxide Semiconductor Field Effect Transistor (MOSFET).

    ADVANTAGES OF FET:

    FET is a voltage controlled, constant current device in which variations in input voltage
    control the output current. Some of the advantages of FET are:
    1. Input impedance is very high (of the range of 100Mohm). This gives high degree of
    isolation between the input & output circuit.
    2. The operation depends upon the majority current carriers. The inherent noise of
    transistor Field Effect Transistor (due to junction transitions) are not present in FET.
    3. FET has a smaller size, longer life and high efficiency.
    4. Very high power gain, so eliminates the necessity of using driver stages.
    5. FET has negative temperature coefficient of resistance. This avoids the risk of thermal
    runway.

    NOTE:
    1 . In case of n - type FET, gate arrow is pointed in,
    2. In case of p - type FET, gate arrow is pointed out,
    3. In case of JFET, the gate channel junctions are normally reverse biased.

    4
    UEE505: ANALOG AND DIGITAL SYSTEMS

    CIRCUIT DIAGRAM:
    R

    POWER

    5VDC 15mADC 15VDC

    - mA

    D
    BFW
    10
    G S

    VGS VDS

    SET VOLTS
    0-5VDC SET VOLTS
    0-15VDC

    FIG. (1)
    Fig. 2.1 FET Characteristics

    PROCEDURE:
    DRAIN CHARACTERISTICS:
    These are the curves between drain voltage (VDS) and drain current (ID) for different values
    of gate voltage (VGS).
    1. Make the connection as shown in Fig. (2.1).

    2. Switch ON the instrument using ON/ OFF toggle switch provided on the front

    panel & adjust gate supply voltage (VGS) to 0 volts.

    3. Initially keep VDS to 0 volts.

    4. Increase VDS in the step of 0.5V up to 12Volts and note down the

    corresponding current ID in Observation Table (1).

    5. Make VGS= -1volt and repeat steps 3 & 4.

    4
    UEE505: ANALOG AND DIGITAL SYSTEMS

    6. Increase VGS in the step of -1volt and repeat steps 3 & 4.

    7. Plot a graph between VDS and ID for different values of VGS by taking VDS

    along X-axis and ID along Y-axis as shown in Fig. (2).

    TRANSFER CHARACTERISTICS:
    8. Adjust VGS to 0 volts and repeat the step 4.

    9. Increase VGS in the step of 0.5V by keeping VDS constant and note down ID in

    Observation Table (2). At particular value of VGS voltage, drain current reduces

    to zero VGS (OFF). The Gate voltage at which the channel is cut-off is called

    Gate Source cut-off voltage.

    10. Plot a graph between VGS & ID for constant values of VDS as shown in Fig. (3).

    OBSERVATION TABLE:

    DRAIN CHARACTERISTICS:

    VDS ID (mA) FOR


    Sr. No
    (VOLTS) VGS= -0V VGS= -2V VGS= 3V
    1
    2
    3
    4

    TRANSFER CHARCTERISTICS:
    For Constant VDS
    Sr. No
    VGS (VOLTS) ID (mA)
    1
    2
    3
    4

    4
    UEE505: ANALOG AND DIGITAL SYSTEMS

    DRAIN CHARACTERISTICS:

    Fig. 2.2

    TRANSFER CHARACTERISTICS:

    Fig. 2.3
    PRECAUTIONS:
    1. Connect voltmeter and ammeter with correct polarities as shown in the circuit
    diagram.
    2. Do not switch ON the power supply unless the circuit connections are checked
    as per the circuit diagram.
    3. Properly identify the Source, Drain and Gate terminals of the transistor.
    4. Ensure all connections should be tight before switching on the power supply.
    5. Take the reading carefully.

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