STB12NM50T4, STP12NM50, STP12NM50FP

Datasheet

N-channel 500 V, 300 mΩ typ., 12 A MDmesh Power MOSFETs

in a D²PAK, TO-220 and TO-220FP packages

TAB Features
3
Order codes VDS RDS(on) max. ID
1
D2 PAK
2
3 STB12NM50T4
1
TO-220FP
TAB STP12NM50 500 V 350 mΩ 12 A
STP12NM50FP
3
1
2 • 100% avalanche tested
TO-220 • Low input capacitance and gate charge
• Low gate input resistance
D(2, TAB)

Applications
• Switching applications

G(1)
Description
These N-channel Power MOSFETs are developed using STMicroelectronics'
S(3)
revolutionary MDmesh technology, which associates the multiple drain process with
NG1D2TS3
the company's PowerMESH horizontal layout. These devices offer extremely low on-
resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's
proprietary strip technique, these Power MOSFETs boast an overall dynamic
performance which is superior to similar products on the market.

Product status link

STB12NM50T4
STP12NM50
STP12NM50FP

DS1944 - Rev 12 - October 2020 www.st.com

For further information contact your local STMicroelectronics sales office.
 STB12NM50T4, STP12NM50, STP12NM50FP
Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Value
Symbol Parameter Unit
D²PAK, TO-220 TO-220FP

VGS Gate-source voltage ±30 V

Drain current (continuous) at TC = 25 °C 12 12(1)

ID A
Drain current (continuous) at TC = 100 °C 7.5 7.5(1)

IDM(2) Drain current pulsed 48 48(1) A

PTOT Total power dissipation at TC = 25 °C 160 35 W

Insulation withstand voltage (RMS) from all three leads to

VISO 2.5 kV
external heat sink (t = 1 s, TC = 25 °C)

dv/dt(3) Peak diode recovery voltage slope 15 V/ns

TJ Operating junction temperature range °C

-65 to 150
Tstg Storage temperature range °C

1. Limited by maximum junction temperature.

2. Pulse width limited by safe operating area.
3. ISD ≤ 12 A, di/dt ≤ 400 A/μs, VDD = 80% V(BR)DSS.

Table 2. Thermal data

Value
Symbol Parameter Unit
D²PAK TO-220 TO-220FP

Rthj-case Thermal resistance junction-case 2.78 3.57 °C/W

Rthj-a Thermal resistance junction-ambient 62.5 °C/W

Rthj-pcb(1) Thermal resistance junction-pcb 35 °C/W

1. When mounted on an 1-inch² FR-4, 2 Oz copper board.

Table 3. Avalanche characteristics

Symbol Parameter Value Unit

Avalanche current, repetitive or not repetitive

IAS 6 A
(pulse width limited by TJ max)

Single-pulse avalanche energy

EAS 400 mJ
(starting TJ = 25 °C, ID = IAS, VDD = 50 V)

DS1944 - Rev 12 page 2/20

 STB12NM50T4, STP12NM50, STP12NM50FP
Electrical characteristics

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. Static

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 250 μA 500 V

VGS = 0 V, VDS = 500 V 1

IDSS Zero gate voltage drain current µA
VGS = 0 V, VDS = 500 V, TC = 125 °C (1)
10

IGSS Gate-body leakage current VDS = 0 V, VGS = ±30 V ±100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 3 4 5 V

RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 6 A 300 350 mΩ

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance - 1000 - pF

Coss Output capacitance VDS = 25 V, f = 1 MHz, VGS = 0 V - 250 - pF

Crss Reverse transfer capacitance - 20 - pF

Coss eq. (1) VDS = 0 to 400 V, VGS = 0 V

Equivalent output capacitance - 90 - pF

td(on) Turn-on Delay Time VDD = 250 V, ID = 6 A, - 20 - ns

RG = 4.7 Ω, VGS = 10 V

tr Rise Time (see Figure 13. Test circuit for resistive - 10 - ns

load switching times and
Figure 18. Switching time waveform)
Qg Total gate charge - 28 - nC
VDD = 400 V, ID = 12 A, VGS = 0 to 10 V
Qgs Gate-source charge (see Figure 14. Test circuit for gate - 8 - nC

Qgd charge behavior)

Gate-drain charge - 16 - nC

f = 1 MHz, gate DC Bias = 0,

Rg Gate input resistance - 1.6 - Ω
test signal level = 20 mV, open drain

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.

DS1944 - Rev 12 page 3/20

 STB12NM50T4, STP12NM50, STP12NM50FP
Electrical characteristics

Table 6. Source-drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current - 12 A

ISDM (1) Source-drain current (pulsed) - 48 A

VSD (2) Forward on voltage VGS = 0 V, ISD = 12 A - 1.5 V

trr Reverse recovery time ISD = 12 A, di/dt = 100 A/µs, - 270 ns

Qrr Reverse recovery charge VDD = 100 V - 2.23 µC

(see Figure 15. Test circuit for inductive
IRRM Reverse recovery current - 16.5 A
load switching and diode recovery times)
trr Reverse recovery time ISD = 12 A, di/dt = 100 A/µs, - 340 ns

Qrr Reverse recovery charge VDD = 100 V, TJ = 150 °C - 3 µC

(see Figure 15. Test circuit for inductive
IRRM Reverse recovery current - 18 A
load switching and diode recovery times)

1. Pulse width is limited by safe operating area.

2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

DS1944 - Rev 12 page 4/20

 STB12NM50T4, STP12NM50, STP12NM50FP
Electrical characteristics (curves)

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area for D²PAK and TO-220 Figure 2. Thermal impedance for D²PAK and TO-220
HV27510

Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP
HV27450
K GC20521

δ=0.5

0.2
0.1
10-1

0.05
0.02
0.01
10-2
Zth= K*R thJ-c
Single pulse
δ =t p/Ƭ

tp
Ƭ
10-3
10-4 10 -3
10
-2
10-1
10-0 tp(s)

Figure 5. Output characteristics Figure 6. Transfer characteristics

HV00002 HV00003

DS1944 - Rev 12 page 5/20

 STB12NM50T4, STP12NM50, STP12NM50FP
Electrical characteristics (curves)

Figure 7. Static drain-source on-resistance Figure 8. Gate charge vs gate-source voltage

HV00004 HV00005

Figure 10. Normalized gate threshold voltage vs

Figure 9. Capacitance variations
temperature
GC85600
GC74100

Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics
GC85610 GC85620

DS1944 - Rev 12 page 6/20

 STB12NM50T4, STP12NM50, STP12NM50FP
Test circuits

3 Test circuits

Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior

VDD

12 V 47 kΩ
1 kΩ
100 nF
RL
2200 3.3
+ μF μF VDD
VD IG= CONST
VGS 100 Ω D.U.T.

VGS
RG D.U.T. pulse width +
2.7 kΩ
2200 VG
pulse width μF
47 kΩ

1 kΩ

AM01468v1 AM01469v1

Figure 15. Test circuit for inductive load switching and

Figure 16. Unclamped inductive load test circuit
diode recovery times

A A A L
D VD
fast 100 µH
G D.U.T. diode 2200 3.3
S B 3.3 1000 + µF µF VDD
B B
25 Ω D
µF + µF VDD ID
G D.U.T.
+ RG S
Vi D.U.T.
_
pulse width

AM01471v1
AM01470v1

Figure 18. Switching time waveform

Figure 17. Unclamped inductive waveform
ton toff
V(BR)DSS
td(on) tr td(off) tf
VD

90% 90%
IDM

10% VDS 10%

ID 0

VDD VDD
VGS 90%

AM01472v1 0 10%
AM01473v1

DS1944 - Rev 12 page 7/20

 STB12NM50T4, STP12NM50, STP12NM50FP
Package information

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 D²PAK (TO-263) type A package information

Figure 19. D²PAK (TO-263) type A package outline

0079457_26

DS1944 - Rev 12 page 8/20

 STB12NM50T4, STP12NM50, STP12NM50FP
D²PAK (TO-263) type A package information

Table 7. D²PAK (TO-263) type A package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
A1 0.03 0.23
b 0.70 0.93
b2 1.14 1.70
c 0.45 0.60
c2 1.23 1.36
D 8.95 9.35
D1 7.50 7.75 8.00
D2 1.10 1.30 1.50
E 10.00 10.40
E1 8.30 8.50 8.70
E2 6.85 7.05 7.25
e 2.54
e1 4.88 5.28
H 15.00 15.85
J1 2.49 2.69
L 2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R 0.40
V2 0° 8°

DS1944 - Rev 12 page 9/20

 STB12NM50T4, STP12NM50, STP12NM50FP
D²PAK (TO-263) type A package information

Figure 20. D²PAK (TO-263) recommended footprint (dimensions are in mm)

Footprint_26

DS1944 - Rev 12 page 10/20

 STB12NM50T4, STP12NM50, STP12NM50FP
TO-220 type A package information

4.2 TO-220 type A package information

Figure 21. TO-220 type A package outline

0015988_typeA_Rev_23

DS1944 - Rev 12 page 11/20

 STB12NM50T4, STP12NM50, STP12NM50FP
TO-220 type A package information

Table 8. TO-220 type A package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
b 0.61 0.88
b1 1.14 1.55
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10.00 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13.00 14.00
L1 3.50 3.93
L20 16.40
L30 28.90
øP 3.75 3.85
Q 2.65 2.95
Slug flatness 0.03 0.10

DS1944 - Rev 12 page 12/20

 STB12NM50T4, STP12NM50, STP12NM50FP
TO-220FP package information

4.3 TO-220FP package information

Figure 22. TO-220FP package outline

7012510_Rev_13_B

DS1944 - Rev 12 page 13/20

 STB12NM50T4, STP12NM50, STP12NM50FP
TO-220FP package information

Table 9. TO-220FP package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
B 2.50 2.70
D 2.50 2.75
E 0.45 0.70
F 0.75 1.00
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.20
G1 2.40 2.70
H 10.00 10.40
L2 16.00
L3 28.60 30.60
L4 9.80 10.60
L5 2.90 3.60
L6 15.90 16.40
L7 9.00 9.30
Dia 3.00 3.20

DS1944 - Rev 12 page 14/20

 STB12NM50T4, STP12NM50, STP12NM50FP
D²PAK packing information

4.4 D²PAK packing information

Figure 23. D²PAK tape outline

DS1944 - Rev 12 page 15/20

 STB12NM50T4, STP12NM50, STP12NM50FP
D²PAK packing information

Figure 24. D²PAK reel outline

40mm min.
access hole
at slot location
B

D C

N
A

Tape slot G measured

in core for at hub
Full radius tape start
2.5mm min.width

AM06038v1

Table 10. D²PAK tape and reel mechanical data

Tape Reel

mm mm
Dim. Dim.
Min. Max. Min. Max.

A0 10.5 10.7 A 330

B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base quantity 1000
P2 1.9 2.1 Bulk quantity 1000
R 50
T 0.25 0.35
W 23.7 24.3

DS1944 - Rev 12 page 16/20

 STB12NM50T4, STP12NM50, STP12NM50FP
Ordering information

5 Ordering information

Table 11. Order codes

Order codes Marking Package Packing

STB12NM50T4 B12NM50 D²PAK Tape and reel

STP12NM50 P12NM50 TO-220 Tube
STP12NM50FP P12NM50FP TO-220FP Tube

DS1944 - Rev 12 page 17/20

 STB12NM50T4, STP12NM50, STP12NM50FP

Revision history

Table 12. Document revision history

Date Revision Changes

14-Mar-2004 8 Preliminary version

15-Feb-2006 9 New voltage value on first page at tjmax.
05-Apr-2006 10 Inserted ecopack indication
27-Jul-2006 11 New template, no content change
The part number STB12NM50-1 have been moved to a separate datasheet and the document
has been updated accordingly.
Updated cover page.
22-Oct-2020 12
Updated Section 1 Electrical ratings and Section 2 Electrical characteristics.
Added Section Section 5 Ordering information.
Minor text changes.

DS1944 - Rev 12 page 18/20

 STB12NM50T4, STP12NM50, STP12NM50FP
Contents

Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1 D²PAK (TO-263) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.2 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.3 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.4 D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

5 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18

DS1944 - Rev 12 page 19/20

 STB12NM50T4, STP12NM50, STP12NM50FP

IMPORTANT NOTICE – PLEASE READ CAREFULLY

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DS1944 - Rev 12 page 20/20