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    Bu 2508D Transistor Cnal N 8amp 1200V

    Uploaded by

    Jose Altuve
    This document provides the product specification for the BU2508D silicon NPN power transistor from SavantIC Semiconductor. It includes descriptions of the TO-3PN package and applications in horizontal deflection circuits of color TV receivers. Absolute maximum and characteristic ratings are given for electrical parameters like collector-emitter voltage, current, and power dissipation. The specifications also include key transistor characteristics like current gain, saturation voltage, and cutoff current. Dimensional outlines are provided for the TO-3PN package.

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    Bu 2508D Transistor Cnal N 8amp 1200V

    Uploaded by

    Jose Altuve
    14 views3 pages
    This document provides the product specification for the BU2508D silicon NPN power transistor from SavantIC Semiconductor. It includes descriptions of the TO-3PN package and applications in horizontal deflection circuits of color TV receivers. Absolute maximum and characteristic ratings are given for electrical parameters like collector-emitter voltage, current, and power dissipation. The specifications also include key transistor characteristics like current gain, saturation voltage, and cutoff current. Dimensional outlines are provided for the TO-3PN package.

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    BU 2508D TRANSISTOR CNAL N 8AMP 1200V

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    This document provides the product specification for the BU2508D silicon NPN power transistor from SavantIC Semiconductor. It includes descriptions of the TO-3PN package and applications in horizontal deflection circuits of color TV receivers. Absolute maximum and characteristic ratings are given for electrical parameters like collector-emitter voltage, current, and power dissipation. The specifications also include key transistor characteristics like current gain, saturation voltage, and cutoff current. Dimensional outlines are provided for the TO-3PN package.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    14 views3 pages

    Bu 2508D Transistor Cnal N 8amp 1200V

    Uploaded by

    Jose Altuve
    This document provides the product specification for the BU2508D silicon NPN power transistor from SavantIC Semiconductor. It includes descriptions of the TO-3PN package and applications in horizontal deflection circuits of color TV receivers. Absolute maximum and characteristic ratings are given for electrical parameters like collector-emitter voltage, current, and power dissipation. The specifications also include key transistor characteristics like current gain, saturation voltage, and cutoff current. Dimensional outlines are provided for the TO-3PN package.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors BU2508D

    DESCRIPTION
    ·With TO-3PN package
    ·High voltage;high speed
    ·Built-in damper diode

    APPLICATIONS
    ·For use in horizontal deflection circuits
    of colour TV receivers.

    PINNING
    PIN DESCRIPTION

    1 Base
    Collector;connected to
    2
    mounting base
    3 Emitter Fig.1 simplified outline (TO-3PN) and symbol

    Absolute maximum ratings (Ta=25 )


    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    VCBO Collector-base voltage Open emitter 1200 V

    VCEO Collector-emitter voltage Open base 700 V

    VEBO Emitter-base voltage Open collector 7.5 V

    IC Collector current 8 A

    ICM Collector current-peak 15 A

    IB Base current 4 A

    IBM Base current-peak 6 A

    PC Collector power dissipation TC=25 125 W

    Tj Junction temperature 150

    Tstg Storage temperature -65~150


    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors BU2508D

    CHARACTERISTICS
    Tj=25 unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0,L=25mH 700 V

    V(BR)EBO Emitter-base breakdown voltage IE=600mA; IC=0 7.5 13.5 V

    VCE(sat-1) Collector-emitter saturation voltage IC=4.5A; IB=1.1A 5.0 V

    VCE(sat-2) Collector-emitter saturation voltage IC=4.5A; IB=1.29A 1.0 V

    VBE(sat) Base-emitter saturation voltage IC=4.5A; IB=1.7A 1.3 V

    VCE=rated; VBE=0 1.0


    ICES Collector cut-off current mA
    T=125°C 2.0

    IEBO Emitter cut-off current VEB=7.5V; IC=0 140 390 mA

    hFE-1 DC current gain IC=1A ; VCE=5V 7 13 23

    hFE-2 DC current gain IC=4.5A ; VCE=1V 4 5.5 7.5

    VF Diode forward voltage IF=4.5A 1.6 2.0 V

    CC Collector capacitance VCB=10V;f=1MHz 80 pF

    2
    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors BU2508D

    PACKAGE OUTLINE

    Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)

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