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ECE201C

This document is an exam paper for an Electronic Devices course. It contains 8 questions covering various topics in electronic devices including band theory of materials, diode characteristics, transistor configurations, biasing techniques, and applications of devices like UJTs and IGBTs. Students are instructed to attempt 4 questions out of the 8 questions provided, which are of equal marks. The exam is for a third semester B.Tech course with a duration of 2.5 hours and maximum marks of 75.

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Mahak
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36 views

ECE201C

This document is an exam paper for an Electronic Devices course. It contains 8 questions covering various topics in electronic devices including band theory of materials, diode characteristics, transistor configurations, biasing techniques, and applications of devices like UJTs and IGBTs. Students are instructed to attempt 4 questions out of the 8 questions provided, which are of equal marks. The exam is for a third semester B.Tech course with a duration of 2.5 hours and maximum marks of 75.

Uploaded by

Mahak
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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No. of Printed Pages : 02 Roll No. .......................

18C21
B.Tech. EXAMINATION, 2021
(Third Semester)
(C-Scheme) (Main Only)
(ECE)
ECE201C
ELECTRONIC DEVICES

Time : 2½ Hours] [Maximum Marks : 75

Before answering the question-paper candidates should ensure that they have been supplied
to correct and complete question-paper. No complaint, in this regard, will be entertained
after the examination.

Note : Attempt Four questions in all. All questions carry equal marks.

1. (a) Differentiate metals, semiconductors and insulators on the basis of Band


theory.
(b) Explain, how Halls effect differentiates between N-Type and P-Type
semiconductors ?
(c) Derive continuity equation and explain its significance for semiconductors.

2. (a) Draw and explain the switching characteristics of diode. Explain, why these
are different from VI characteristics of diode ?
(b) Explain, which is having higher potential Zener or Avalanche breakdown and
why ? Explain both the mechanisms in detail.
(c) Draw and explain the working and characteristics of tunnel diode.

(3)(A21)M-18C21 1 P.T.O.
3. (a) Realize positive shunt clipper for 5-0-5 sinusoidal wave with a biasing voltage
of 3 V connected in series with diode. Draw its waveform and explain its
working.
(b) When the gain alpha of CB configuration is less than 1 then how can it be
designed as amplifier ? If so then derive the expression for gain ?

4. (a) Why do Eber’s Moll Model is able to explain the transistor action in a perfect
way ? Derive an expression which clarifies the transistor action by realizing
the Eber’s Model.
(b) How will you justify the tilting of output upwards characteristics in active
region when we move from 0 – higher reverse voltage, as it needs to be
straight line parallel to x-axis (VCE) ?

5. (a) Explain the concept of Bias compensation with the help of diode, Thermistor
and sensistor.
(b) Derive condition for thermal stability.

6. (a) Consider the case of voltage divider biasing and derive results for Ai, Ri, Av,
Ro, Avs, Ais.
(b) Draw practical electronic circuits for Miller’s theorem. Also derive Ri, Ai, Av,
Ro for the same.

7. (a) Derive results for CD configuration with and without Rd separately. Derive
expressions for Ro and Av.
(b) Explain how P-MOS and N-MOS acts in both depletion and enhancement
mode. Draw waveforms for both and along with marking their enhancement
and depletion mode.

8. Write short notes on the following :


(a) UJT as a relaxation oscillator.
(b) IGBT application as an amplifier.

(3)(A21)M-18C21 2 20

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