Btech 1 Sem Basic Electronics Rec101 2021
Btech 1 Sem Basic Electronics Rec101 2021
Btech 1 Sem Basic Electronics Rec101 2021
B. TECH
(SEM I) THEORY EXAMINATION 2020-21
BASIC ELECTRONICS
Time: 3 Hours Total Marks: 70
Note: 1. Attempt all Sections. If require any missing data; then choose suitably.
SECTION A
1. Attempt all questions in brief. 2 x 7 = 14
a. Why Silicon(Si) is preferred over Germanium(Ge)?
b. List the advantages of MOSFET over BJT.
c. Draw the V-I characteristics for ideal and practical diode.
d. List characteristics of Ideal Op Amp.
e. A lissajous pattern on a CRO is stationary and has 4 horizontals and 2 vertical
tangencies. The horizontal frequency is 100 Hz, find vertical frequency.
f. What is need of Modulation?
g. State the advantages of digital instruments over analog instruments.
SECTION B
2. Attempt any three of the following: 7 x 3 = 21
a. Draw and explain the block diagram of Ramp type digital voltmeter. Also draw
related voltage to time conversion waveforms.
b. Describe various analog modulation techniques in communication.
c. Draw and explain the differential amplifier. An operational amplifier has a
differential gain of 103 and 100, input voltages are 120µV and 80µV, and
determine output voltage.
d. Draw and explain the construction and working of N-channel Enhancement
type MOSFET.
e. Determine the output waveform for the network of Fig. and calculate the output
dc level and the required PIV of each diode.
Fig.
SECTION C
3. Attempt any one part of the following: 7x1=7
(a) Explain the working and V-I characteristic of p-n junction diode. Write
difference between avalanche and zener breakdown.
(b) Explain the following with clear diagram: -
i) Full wave voltage doublers
ii) Bridge rectifier.
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