PD - 91354A

IRFZ24N
HEXFET Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating D
l 175C Operating Temperature VDSS = 55V
l Fast Switching
l Fully Avalanche Rated RDS(on) = 0.07
G

Description ID = 17A
Fifth Generation HEXFET power MOSFETs from S
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety
of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance TO-220AB
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25C Continuous Drain Current, VGS @ 10V 17
ID @ TC = 100C Continuous Drain Current, VGS @ 10V 12 A
IDM Pulsed Drain Current 68
PD @TC = 25C Power Dissipation 45 W
Linear Derating Factor 0.30 W/C
VGS Gate-to-Source Voltage 20 V
EAS Single Pulse Avalanche Energy 71 mJ
IAR Avalanche Current 10 A
EAR Repetitive Avalanche Energy 4.5 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm)

Thermal Resistance
Parameter Min. Typ. Max. Units
RJC Junction-to-Case 3.3
RCS Case-to-Sink, Flat, Greased Surface 0.50 C/W
RJA Junction-to-Ambient 62
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Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ.Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 V VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.052 V/C Reference to 25C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance 0.07 VGS = 10V, ID = 10A
VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 250A
gfs Forward Transconductance 4.5 S VDS = 25V, ID = 10A
25 VDS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current A
250 VDS = 44V, VGS = 0V, TJ = 150C
Gate-to-Source Forward Leakage 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage -100 VGS = -20V
Qg Total Gate Charge 20 ID = 10A
Qgs Gate-to-Source Charge 5.3 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge 7.6 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time 4.9 VDD = 28V
tr Rise Time 34 ID = 10A
ns
td(off) Turn-Off Delay Time 19 RG = 24
tf Fall Time 27 RD = 2.6, See Fig. 10
Between lead, D
LD Internal Drain Inductance 4.5
6mm (0.25in.)
nH
from package G
LS Internal Source Inductance

7.5
and center of die contact S

Ciss Input Capacitance 370 VGS = 0V

Coss Output Capacitance 140 pF VDS = 25V
Crss Reverse Transfer Capacitance 65 = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
17
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
68
(Body Diode) p-n junction diode. S

VSD Diode Forward Voltage 1.3 V TJ = 25C, IS = 10A, VGS = 0V

trr Reverse Recovery Time 56 83 ns TJ = 25C, IF = 10A
Q rr Reverse RecoveryCharge 120 180 nC di/dt = 100A/s

Notes:
Repetitive rating; pulse width limited by ISD 10A, di/dt 280A/s, VDD V(BR)DSS,
max. junction temperature. ( See fig. 11 ) TJ 175C

VDD = 25V, starting TJ = 25C, L = 1.0mH Pulse width 300s; duty cycle 2%.
RG = 25, IAS = 10A. (See Figure 12)

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100 VGS
100 VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
7.0V 7.0V
I , D rain-to-S ource C urrent (A )

I , D rain-to-S ource C urrent (A )

6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V

10 10

4 .5V

4.5V
D

D
20 s P U LS E W ID TH 2 0 s P U L S E W ID T H
TC = 2 5C T C = 17 5C
1 A 1 A
0.1 1 10 100 0.1 1 10 100
V D S , D rain-to-S ourc e V oltage (V ) V DS , D rain-to-S ource V oltage (V )

Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics,

TJ = 25oC TJ = 175oC

100 3.0
I D = 1 7A
R D S (on) , Drain-to-S ource O n Resistance
I D , D rain-to-So urce C urren t (A )

2.5
TJ = 2 5 C
T J = 1 7 5 C 2.0
(N orm alized)

10 1.5

1.0

0.5

V DS = 2 5V
2 0 s P U L S E W ID TH V G S = 10 V
1 0.0 A
A
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

V G S , G ate-to -So urce Voltag e (V) T J , Junction T em perature (C )

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

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700 20
V GS = 0V , f = 1M H z I D = 10 A
C is s = C g s + C g d , Cd s S H O R T E D V D S = 44 V

V G S , G ate-to-S ource V oltage (V )

600 C rs s = C gd V D S = 28 V
C o ss = C d s + C gd 16
C iss
C , Capacitance (pF)

500

12
400 C oss

300
8

200 C rss
4
100
FO R TE S T C IR C U IT
S E E FIG U R E 1 3
0 A 0 A
1 10 100 0 4 8 12 16 20
V D S , D rain-to-S ourc e V oltage (V ) Q G , T otal G ate C harge (nC )

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 1000
O P E R A TIO N IN TH IS A R E A L IM ITE D
B Y R D S (o n)
I S D , Reverse D rain C urrent (A)

I D , Drain C urrent (A )

T J = 1 75 C
100

TJ = 25 C
10 s
10

10 100 s

T C = 25 C 1m s
T J = 17 5C
V G S = 0V S ing le P u lse 10m s
1 A 1 A
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 10 100
V S D , S ourc e-to-D rain V oltage (V ) V D S , D rain-to-S ource V oltage (V )

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage

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RD
VDS
20
VGS
D.U.T.
RG
+
16
- VDD
I D , D rain C u rren t (A m ps )

10V
12 Pulse Width 1 s
Duty Factor 0.1 %

8 Fig 10a. Switching Time Test Circuit

VDS
4 90%

0 A
25 50 75 100 125 150 175
10%
TC , C ase T em perature (C ) VGS
td(on) tr t d(off) tf

Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature
10
T h erm a l R e s p o n s e (Z th JC )

D = 0.5 0

1
0 .2 0

0 .1 0
0.0 5
0.02 PD M
0.01
0.1
t
S IN G L E P U L S E 1
(T H E R M A L R E S P O N S E ) t2

N o te s :
1 . D u ty f ac to r D = t /t
1 2
2 . P e a k T J = P D M x Z th J C + T C
0.01 A
0.00001 0.0001 0.001 0.01 0.1 1

t 1 , R ectang ular P ulse D uration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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L
VDS 140
ID

E A S , S ingle P ulse A valanche E nergy (m J)

D.U.T. TO P 4.2 A
120 7.2A
RG + B O TTO M 1 0A
V
- DD
100
10 V IAS
tp 80
0.01

60
Fig 12a. Unclamped Inductive Test Circuit

V(BR)DSS 40

tp 20

VDD
V D D = 25 V
0 A
25 50 75 100 125 150 175
VDS S tarting T J , J unc tion T em perature (C )

Fig 12c. Maximum Avalanche Energy

IAS Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50K

QG 12V .2F
.3F
10 V +
QGS QGD V
D.U.T. - DS

VGS
VG
3mA

Charge IG ID
Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

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Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
Low Stray Inductance
Ground Plane

Low Leakage Inductance
Current Transformer
-

+


- +
-

RG dv/dt controlled by RG +
Driver same type as D.U.T. VDD
-
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFET power MOSFETs

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Package Outline
TO-220AB
Dimensions are shown in millimeters (inches)
10 .54 (.4 15) 3 .7 8 (.149 ) -B -
2.87 (.11 3) 10 .29 (.4 05) 3 .5 4 (.139 ) 4.69 ( .18 5 )
2.62 (.10 3) 4.20 ( .16 5 )
-A - 1 .32 (.05 2)
1 .22 (.04 8)
6.47 (.25 5)
6.10 (.24 0)
4
1 5.24 (.60 0)
1 4.84 (.58 4)
1.15 (.04 5) L E A D A S S IG NM E NT S
M IN 1 - GATE
1 2 3 2 - D R A IN
3 - S O U RC E
4 - D R A IN
1 4.09 (.55 5)
1 3.47 (.53 0) 4.06 (.16 0)
3.55 (.14 0)

0.93 (.03 7) 0.55 (.02 2)

3X 3X
0.69 (.02 7) 0.46 (.01 8)
1 .4 0 (.0 55 )
3X
1 .1 5 (.0 45 ) 0 .3 6 (.01 4) M B A M
2 .92 (.11 5)
2 .64 (.10 4)
2.54 (.10 0)
2X
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 -A B .
2 C O N TR O L LIN G D IM E N S IO N : IN C H 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .

Part Marking Information

TO-220AB
E X A M P L E : TH IS IS A N IR F1 0 1 0
W IT H A S S E M B L Y A
LOT C ODE 9B1M IN TE R N A TIO N A L PART NU MBER
R E C TIF IE R
IR F 10 1 0
LOGO 9246
9B 1M D A TE C O D E
ASSEMBLY
(Y Y W W )
LOT CO DE
YY = YEAR
W W = W EEK

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http://www.irf.com/ Data and specifications subject to change without notice. 9/99
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/