Irfz24n PDF
Irfz24n PDF
Irfz24n PDF
IRFZ24N
HEXFET Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating D
l 175C Operating Temperature VDSS = 55V
l Fast Switching
l Fully Avalanche Rated RDS(on) = 0.07
G
Description ID = 17A
Fifth Generation HEXFET power MOSFETs from S
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety
of applications.
Thermal Resistance
Parameter Min. Typ. Max. Units
RJC Junction-to-Case 3.3
RCS Case-to-Sink, Flat, Greased Surface 0.50 C/W
RJA Junction-to-Ambient 62
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IRFZ24N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ.Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 V VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.052 V/C Reference to 25C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance 0.07 VGS = 10V, ID = 10A
VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 250A
gfs Forward Transconductance 4.5 S VDS = 25V, ID = 10A
25 VDS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current A
250 VDS = 44V, VGS = 0V, TJ = 150C
Gate-to-Source Forward Leakage 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage -100 VGS = -20V
Qg Total Gate Charge 20 ID = 10A
Qgs Gate-to-Source Charge 5.3 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge 7.6 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time 4.9 VDD = 28V
tr Rise Time 34 ID = 10A
ns
td(off) Turn-Off Delay Time 19 RG = 24
tf Fall Time 27 RD = 2.6, See Fig. 10
Between lead, D
LD Internal Drain Inductance 4.5
6mm (0.25in.)
nH
from package G
LS Internal Source Inductance
7.5
and center of die contact S
Notes:
Repetitive rating; pulse width limited by ISD 10A, di/dt 280A/s, VDD V(BR)DSS,
max. junction temperature. ( See fig. 11 ) TJ 175C
VDD = 25V, starting TJ = 25C, L = 1.0mH Pulse width 300s; duty cycle 2%.
RG = 25, IAS = 10A. (See Figure 12)
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IRFZ24N
100 VGS
100 VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
7.0V 7.0V
I , D rain-to-S ource C urrent (A )
10 10
4 .5V
4.5V
D
D
20 s P U LS E W ID TH 2 0 s P U L S E W ID T H
TC = 2 5C T C = 17 5C
1 A 1 A
0.1 1 10 100 0.1 1 10 100
V D S , D rain-to-S ourc e V oltage (V ) V DS , D rain-to-S ource V oltage (V )
100 3.0
I D = 1 7A
R D S (on) , Drain-to-S ource O n Resistance
I D , D rain-to-So urce C urren t (A )
2.5
TJ = 2 5 C
T J = 1 7 5 C 2.0
(N orm alized)
10 1.5
1.0
0.5
V DS = 2 5V
2 0 s P U L S E W ID TH V G S = 10 V
1 0.0 A
A
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
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IRFZ24N
700 20
V GS = 0V , f = 1M H z I D = 10 A
C is s = C g s + C g d , Cd s S H O R T E D V D S = 44 V
500
12
400 C oss
300
8
200 C rss
4
100
FO R TE S T C IR C U IT
S E E FIG U R E 1 3
0 A 0 A
1 10 100 0 4 8 12 16 20
V D S , D rain-to-S ourc e V oltage (V ) Q G , T otal G ate C harge (nC )
100 1000
O P E R A TIO N IN TH IS A R E A L IM ITE D
B Y R D S (o n)
I S D , Reverse D rain C urrent (A)
I D , Drain C urrent (A )
T J = 1 75 C
100
TJ = 25 C
10 s
10
10 100 s
T C = 25 C 1m s
T J = 17 5C
V G S = 0V S ing le P u lse 10m s
1 A 1 A
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 10 100
V S D , S ourc e-to-D rain V oltage (V ) V D S , D rain-to-S ource V oltage (V )
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IRFZ24N
RD
VDS
20
VGS
D.U.T.
RG
+
16
- VDD
I D , D rain C u rren t (A m ps )
10V
12 Pulse Width 1 s
Duty Factor 0.1 %
VDS
4 90%
0 A
25 50 75 100 125 150 175
10%
TC , C ase T em perature (C ) VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature
10
T h erm a l R e s p o n s e (Z th JC )
D = 0.5 0
1
0 .2 0
0 .1 0
0.0 5
0.02 PD M
0.01
0.1
t
S IN G L E P U L S E 1
(T H E R M A L R E S P O N S E ) t2
N o te s :
1 . D u ty f ac to r D = t /t
1 2
2 . P e a k T J = P D M x Z th J C + T C
0.01 A
0.00001 0.0001 0.001 0.01 0.1 1
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IRFZ24N
L
VDS 140
ID
60
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS 40
tp 20
VDD
V D D = 25 V
0 A
25 50 75 100 125 150 175
VDS S tarting T J , J unc tion T em perature (C )
Current Regulator
Same Type as D.U.T.
50K
QG 12V .2F
.3F
10 V +
QGS QGD V
D.U.T. - DS
VGS
VG
3mA
Charge IG ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
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IRFZ24N
+
- +
-
RG dv/dt controlled by RG +
Driver same type as D.U.T. VDD
-
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VGS=10V *
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple 5% ISD
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http://www.irf.com/ Data and specifications subject to change without notice. 9/99
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/