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    This document provides information about the ECE 261: Full Custom VLSI Design course taught by Professor James Morizio. The course objectives are to teach VLSI design methodologies with an emphasis on full-custom design. Students will use Mentor Graphics CAD tools to design, simulate, and verify integrated circuits. The course will cover techniques for designing high-speed, low-power, and testable circuits. It will also discuss designing systems on a chip, the challenges of manufacturing ICs, and the history and growth of VLSI technology according to Moore's Law.

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    Intro

    Uploaded by

    teja C S
    73 views25 pages
    This document provides information about the ECE 261: Full Custom VLSI Design course taught by Professor James Morizio. The course objectives are to teach VLSI design methodologies with an emphasis on full-custom design. Students will use Mentor Graphics CAD tools to design, simulate, and verify integrated circuits. The course will cover techniques for designing high-speed, low-power, and testable circuits. It will also discuss designing systems on a chip, the challenges of manufacturing ICs, and the history and growth of VLSI technology according to Moore's Law.

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    This document provides information about the ECE 261: Full Custom VLSI Design course taught by Professor James Morizio. The course objectives are to teach VLSI design methodologies with an emphasis on full-custom design. Students will use Mentor Graphics CAD tools to design, simulate, and verify integrated circuits. The course will cover techniques for designing high-speed, low-power, and testable circuits. It will also discuss designing systems on a chip, the challenges of manufacturing ICs, and the history and growth of VLSI technology according to Moore's Law.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    73 views25 pages

    Intro

    Uploaded by

    teja C S
    This document provides information about the ECE 261: Full Custom VLSI Design course taught by Professor James Morizio. The course objectives are to teach VLSI design methodologies with an emphasis on full-custom design. Students will use Mentor Graphics CAD tools to design, simulate, and verify integrated circuits. The course will cover techniques for designing high-speed, low-power, and testable circuits. It will also discuss designing systems on a chip, the challenges of manufacturing ICs, and the history and growth of VLSI technology according to Moore's Law.

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    © All Rights Reserved
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    of 25

    ECE 261: Full Custom VLSI Design

    Prof. James Morizio


    Dept. Electrical and Computer Engineering
    Hudson Hall
    Ph: 201-7759
    E-mail: [email protected]
    URL: http://www.ee.duke.edu/~jmorizio

    Course URL:
    http://www.ee.duke.edu/~jmorizio/ece261/261.html

    ECE 261 James Morizio 1


    Course Objectives
    • Introduction to CMOS VLSI design methodologies
    – Emphasis on full-custom design
    – Circuit and system levels
    • Extensive use of Mentor Graphics CAD tools for IC design,
    simulation, and layout verification
    • Specific techniques for designing high-speed, low-power, and
    easily-testable circuits

    ECE 261 James Morizio 2


    Designing for VLSI
    • Designing a system on a chip
    – Craft components from silicon rather than selecting catalog parts
    • ICs (chips) are batch fabricated
    – Inexpensive unit cost
    • Bugs are hard to fix!
    – Extensive design verification needed

    ECE 261 James Morizio 3


    VLSI Design: Overview
    • VLSI design is system design
    – Designing fast inverters is fun, but need knowledge of all aspects
    of digital design: algorithms, systems, circuits, fabrication, and
    packaging
    – Need to bridge gap between abstract vision of digital design and
    the underlying digital circuit and its peculiarities
    – Circuit-level optimization, verification, and testing techniques are
    important
    • Tall thin approach does not always work
    – Today’s designer is “fatter”, but well-versed in both high-level and
    low-level design skills

    ECE 261 James Morizio 4


    VLSI: Enabling Technology
    • Automotive electronic systems
    – A typical Chevrolet has 80 ICs (stereo systems, display panels, fuel
    injection systems, smart suspensions, antilock brakes, airbags)
    • Signal Processing (DSP chips, data acquisition systems)
    • Transaction processing (bank ATMs)
    • PCs, workstations
    • Medical electronics (artificial eye, implants)
    • Multimedia

    ECE 261 James Morizio 5


    Design Complexity
    • Transistor counts and IC densities continue to
    grow!
    – Moore’s Law-The number of transistors on an IC doubles every
    1.5 years
    – Intel x486: 1 million transistors (1989), PowerPC: 2-3 million
    transistors (1994), Pentium: 3.1 million transistors (1994), DEC
    Alpha: 10 million transistors (1995)-9 million in SRAM, Pentium
    IV (2001): 42 million transistors
    • Memory (DRAM) is the “technology driver”
    – 256 Mbits DRAM now commercially available

    ECE 261 James Morizio 6


    A Brief History
    • 1958: First integrated circuit
    – Flip-flop using two transistors
    – Built by Jack Kilby at Texas Instruments
    • 2003
    – Intel Pentium 4 µprocessor (55 million transistors)
    – 512 Mbit DRAM (> 0.5 billion transistors)
    • 53% compound annual growth rate over 45 years
    – No other technology has grown so fast so long
    • Driven by miniaturization of transistors
    – Smaller is cheaper, faster, lower in power!
    – Revolutionary effects on society

    ECE 261 James Morizio 7


    Annual Sales
    • 1018 transistors manufactured in 2003
    – 100 million for every human on the planet
    Global Semiconductor Billings

    200
    (Billions of US$)

    150

    100

    50

    0
    1982 1984 1986 1988 1990 1992 1994 1996 1998 2000 2002

    Year

    ECE 261 James Morizio 8


    VLSI Technology
    • CMOS: Complementary Metal Oxide Silicon
    – Based on voltage-controlled field-effect transistors (FETs)
    • Other technologies: bipolar junction transistors
    (BJTs), BiCMOS, gallium arsenide (GaAs)
    – BJTs, BiCMOS, ECL circuits are faster but CMOS consumes
    lower power and are easier to fabricate
    – GaAs carriers have higher mobility but high integration levels are
    difficult to achieve in GaAs technology

    ECE 261 James Morizio 9


    Transistor Types
    • Bipolar transistors
    – npn or pnp silicon structure
    – Small current into very thin base layer controls large currents
    between emitter and collector
    – Base currents limit integration density
    • Metal Oxide Semiconductor Field Effect Transistors
    – nMOS and pMOS MOSFETS
    – Voltage applied to insulated gate controls current between source
    and drain
    – Low power allows very high integration

    ECE 261 James Morizio 10


    IC Manufacturing
    • Some manufacturing processes are tightly coupled to the
    product, e.g. Buick/Chevy assembly line
    • IC manufacturing technology is more versatile
    • CMOS manufacturing line can make circuits of any type
    by changing some basic tools called masks
    – The same plant can manufacture both microprocessors and microwave
    controllers by simply changing masks
    • Silicon wafers: raw materials of IC manufacturing
    IC
    Test
    structure Wafer

    ECE 261 James Morizio 11


    The First Computer

    The Babbage
    Difference Engine
    (1832)
    25,000 parts
    cost: £17,470
    ECE 261 James Morizio 12
    ENIAC - The first electronic computer
    (1946)

    ECE 261 James Morizio 13


    Invention of the Transistor
    • Vacuum tubes ruled in first half of 20th century
    Large, expensive, power-hungry, unreliable
    • 1947: first point contact transistor
    – John Bardeen and Walter Brattain at Bell Labs
    – Read Crystal Fire
    by Riordan, Hoddeson

    ECE 261 James Morizio 14


    MOS Integrated Circuits
    • 1970’s processes usually had only nMOS transistors
    – Inexpensive, but consume power while idle
    – 1980s-present: CMOS processes for low idle power

    Intel 1101 256-bit SRAM Intel 4004 4-bit µProc

    ECE 261 James Morizio 15


    Moore’s Law
    • 1965: Gordon Moore plotted transistor on each
    chip
    – Fit straight line on semilog scale
    – Transistor counts have doubled every 26 months
    1,000,000,000

    100,000,000
    Integration Levels
    Pentium 4

    SSI: 10 gates
    Pentium III
    10,000,000 Pentium II
    Pentium Pro
    Transistors

    Pentium
    Intel486
    1,000,000

    MSI: 1000 gates


    Intel386
    80286
    100,000
    8086
    10,000

    LSI: 10,000 gates


    8080
    8008
    4004
    1,000

    1970 1975 1980 1985 1990 1995 2000


    VLSI: > 10k gates
    Year

    ECE 261 James Morizio 16


    Corollaries
    • Many other factors grow exponentially
    – Ex: clock frequency, processor performance
    10,000

    1,000 4004

    8008

    8080
    Clock Speed (MHz)

    100 8086

    80286

    Intel386

    10 Intel486

    Pentium

    Pentium Pro/II/III

    1 Pentium 4

    1970 1975 1980 1985 1990 1995 2000 2005

    Year

    ECE 261 James Morizio 17


    Evolution in Complexity

    ECE 261 James Morizio 18


    Evolution in Transistor Count

    ECE 261 James Morizio 19


    Evolution in Speed/Performance

    ECE 261 James Morizio 20


    Intel 4004 Micro-Processor

    ECE 261 James Morizio 21


    Intel Pentium (II) microprocessor

    ECE 261 James Morizio 22


    Silicon in 2010
    Density AccessTime
    (Gbits/cm2) (ns)
    Die Area: 2.5x2.5 cm
    DRAM 8.5 10
    Voltage: 0.6 V
    DRAM (Logic) 2.5 10
    Technology: 0.07 µm
    SRAM (Cache) 0.3 1.5

    Density Max. Ave. Power Clock Rate


    (Mgates/cm2) (W /cm2) (GHz)
    Custom 25 54 3
    Std. Cell 10 27 1.5
    Gate Array 5 18 1
    Single-Mask GA 2.5 12.5 0.7
    FPGA 0.4 4.5 0.25

    ECE 261 James Morizio 23


    Design Abstraction Levels
    SYSTEM

    MODULE
    +

    GATE

    CIRCUIT

    DEVICE
    G
    S D
    n+ n+

    ECE 261 James Morizio 24


    New Design Challenges
    • Interconnect-centric design
    – Capacitive coupling, inductance effects, delay modeling
    • Power densities, power grid design, leakage
    – 80 W/cm2 ∼ 100 W/cm2
    • Nuclear reactor: 150 W/cm2
    – 80% increase in power density per generation (voltage
    scales by 0.8)
    – 225% increase in current density
    – 1.3V power supply leads to 60W power with 60A
    sustained current
    • 2X the current (surge) in your car’s alternator
    • Statistical design (P,V,T)
    ECE 261 James Morizio 25

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