23NM60ND STMicroelectronics
23NM60ND STMicroelectronics
23NM60ND STMicroelectronics
Datasheet
Features
Order code VDS @ TJ max RDS(on) max. ID
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Fast-recovery body diode
Low gate charge and input capacitance
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• Low on-resistance RDS(on)
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TO-247 • 100% avalanche tested
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• High dv/dt ruggedness
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D(2, TAB)
Applications
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• Switching applications
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G(1) Description
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This FDmesh II Power MOSFET with fast-recovery body diode is produced using
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MDmesh II technology. Utilizing a new strip-layout vertical structure, this device
features low on-resistance and superior switching performance. It is ideal for bridge
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AM01475v1_noZen topologies and ZVS phase-shift converters.
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STW23NM60ND
Product summary
1 Electrical ratings
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PTOT Total power dissipation at TC = 25 °C 150 W
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IAS Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max) 9 A
EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAS, VDD = 50 V) 700 mJ
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2. ISD ≤ 19.5 A, di/dt ≤ 600 A/μs, VDD = 80% V(BR)DSS, VDS (peak) < V(BR)DSS.
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Symbol
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Rthj-case Thermal resistance junction-case 0.83 °C/W
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2 Electrical characteristics
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VGS = 0 V, VDS = 600 V 1 µA
IDSS Zero gate voltage drain current
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VGS = 0 V, VDS = 600 V, TC = 125 °C(2) 100 µA
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IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V ±100 nA
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Symbol Parameter Test conditions Min. Typ. Max. Unit
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Ciss Input capacitance - 2100 - pF
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Coss Output capacitance VDS = 50 V, f = 1 MHz, VGS = 0 V - 80 - pF
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Crss Reverse transfer capacitance - 10 - pF
Coss eq. (1) Equivalent output capacitance VGS = 0 V, VDS = 0 to 480 V - 310 - pF
- 69 - nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.
td(off) Turn-off delay time (see Figure 12. Test circuit for resistive - 92 - ns
load switching times and
tf Fall time Figure 17. Switching time waveform) - 42 - ns
trr Reverse recovery time ISD = 19.5 A, di/dt = 100 A/µs, - 190 ns
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load switching and diode recovery times)
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trr Reverse recovery time ISD = 19.5 A, di/dt = 100 A/µs, - 270 ns
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Qrr Reverse recovery charge VDD = 60 V, TJ = 150 °C - 2.0 µC
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(see Figure 14. Test circuit for inductive
IRRM Reverse recovery current - 15 A
load switching and diode recovery times)
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2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
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Figure 3. Output characteristics
b Figure 4. Transfer characteristics
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AM14794v1
ID ID AM14795v1
(A) (A)
50
VGS=10V
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VDS= 20 V
7V
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30
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30
20
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10
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10
b s 0
0 5 10 15 20 25 30 VDS(V)
0
0 2 4 6 8 VGS(V)
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Figure 5. Static drain-source on resistance Figure 6. Gate charge vs gate-source voltage
AM01537v1
VGS
(V) VDD=480V
12 ID=19.5A
10
0
0 20 40 60 80 Qg(nC)
10000
Ciss
1000
100
Coss
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10 Crss
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0.1 1 10 100 VDS(V)
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–100
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Figure 9. Normalized on resistance vs temperature
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Figure 10. Source-drain diode forward characteristics
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b s –100
1.08
1.06
1.04
1.02
1.00
0.98
0.96
0.94
0.92
-50 -25 0 25 50 75 100 TJ (°C)
3 Test circuits
Figure 12. Test circuit for resistive load switching times Figure 13. Test circuit for gate charge behavior
VDD
12 V 47 kΩ
1 kΩ
100 nF
RL
2200 3.3
VD
+ μF μF VDD
IG= CONST
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VGS 100 Ω D.U.T.
RG +
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pulse width
VGS D.U.T. 2.7 kΩ
2200 VG
pulse width μF
47 kΩ
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1 kΩ
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AM01468v1 AM01469v1
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Figure 14. Test circuit for inductive load switching and
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Figure 15. Unclamped inductive load test circuit
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A A A L
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D VD
fast 100 µH
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G D.U.T. diode 2200 3.3
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S B 3.3 1000 + µF µF VDD
B B
µF + µF VDD
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25 Ω D ID
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G D.U.T.
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+
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RG S
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pulse width
D.U.T.
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AM01471v1
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AM01470v1
90% 90%
IDM
0 10%
AM01472v1
AM01473v1
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
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0075325_9
mm
Dim.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0
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3.40
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c 0.40 0.80
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D 19.85 20.15
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E 15.45 15.75
Pr
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70
t e 4.30
L2
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ØP
ØR
3.55
4.50 b s 3.65
5.50
S 5.30
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Revision history
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Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4
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Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
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TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
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Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
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Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
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Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
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ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service
names are the property of their respective owners.
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
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© 2020 STMicroelectronics – All rights reserved
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