STW23NM60ND

Datasheet

N-channel 600 V, 0.150 Ω typ., 19.5 A, FDmesh II Power MOSFET

in a TO-247 package

Features
Order code VDS @ TJ max RDS(on) max. ID

STW23NM60ND 650 V 0.180 Ω

s )19.5 A

3
•
•
Fast-recovery body diode
Low gate charge and input capacitance
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1
2
• Low on-resistance RDS(on)
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TO-247 • 100% avalanche tested
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• High dv/dt ruggedness

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D(2, TAB)
Applications
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• Switching applications
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G(1) Description
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This FDmesh II Power MOSFET with fast-recovery body diode is produced using

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MDmesh II technology. Utilizing a new strip-layout vertical structure, this device
features low on-resistance and superior switching performance. It is ideal for bridge
c
S(3)
AM01475v1_noZen topologies and ZVS phase-shift converters.

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O b Product status link

STW23NM60ND

Product summary

Order code STW23NM60ND

Marking 23NM60ND
Package TO-247
Packing Tube

DS13218 - Rev 1 - January 2020 www.st.com

For further information contact your local STMicroelectronics sales office.
 STW23NM60ND
Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage 600 V

VGS Gate-source voltage ±25 V

ID Drain current (continuous) at TC = 25 °C 19.5

ID Drain current (continuous) at TC = 100 °C

(
11.7
s ) A

IDM(1) Drain current (pulsed)

c t
78 A

u
od
PTOT Total power dissipation at TC = 25 °C 150 W

Pr
IAS Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max) 9 A

EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAS, VDD = 50 V) 700 mJ

dv/dt(2) Peak diode recovery voltage slope

t e 40 V/ns

Tstg Storage temperature range

o le
TJ Operating junction temperature range
b s -55 to 150 °C

1. Pulse width is limited by safe operating area.

- O
2. ISD ≤ 19.5 A, di/dt ≤ 600 A/μs, VDD = 80% V(BR)DSS, VDS (peak) < V(BR)DSS.

( s )
c t Table 2. Thermal data

Symbol
d u Parameter Value Unit

o
Pr
Rthj-case Thermal resistance junction-case 0.83 °C/W

Rthj-amb Thermal resistance junction-ambient 50 °C/W

t e
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b s
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DS13218 - Rev 1 page 2/12

 STW23NM60ND
Electrical characteristics

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 3. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 600 V

VDD = 480 V, ID = 19.5 A, VGS = 10 V

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dv/dt(1) Drain-source voltage slope 30 V/ns

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VGS = 0 V, VDS = 600 V 1 µA
IDSS Zero gate voltage drain current

od
VGS = 0 V, VDS = 600 V, TC = 125 °C(2) 100 µA

Pr
IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V ±100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V

RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 10 A

t e 0.150 0.180 Ω

1. Characteristic value at turn off on inductive load.

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2. Defined by design, not subject to production test.

b s
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Symbol Parameter Test conditions Min. Typ. Max. Unit

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Ciss Input capacitance - 2100 - pF

od
Coss Output capacitance VDS = 50 V, f = 1 MHz, VGS = 0 V - 80 - pF

Pr
Crss Reverse transfer capacitance - 10 - pF

Coss eq. (1) Equivalent output capacitance VGS = 0 V, VDS = 0 to 480 V - 310 - pF

t e f = 1 MHz, Gate DC Bias = 0 V,

o le Rg Gate input resistance Test signal level = 20 mV, - 4 - Ω

b s Qg Total gate charge

open drain

- 69 - nC

O Qgs Gate-source charge

VDD = 480 V, ID = 19.5 A, VGS = 0 to 10 V
(see Figure 13. Test circuit for gate
charge behavior)
- 13 - nC

Qgd Gate-drain charge - 35 - nC

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.

Table 5. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VDD = 300 V, ID = 10 A, - 21 - ns

tr Rise time RG = 4.7 Ω, VGS = 10 V - 19 - ns

td(off) Turn-off delay time (see Figure 12. Test circuit for resistive - 92 - ns
load switching times and
tf Fall time Figure 17. Switching time waveform) - 42 - ns

DS13218 - Rev 1 page 3/12

 STW23NM60ND
Electrical characteristics

Table 6. Source-drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current - 19.5 A

ISDM(1) Source-drain current (pulsed) - 78 A

VSD(2) Forward on voltage ISD = 19.5 A, VGS = 0 V - 1.3 V

trr Reverse recovery time ISD = 19.5 A, di/dt = 100 A/µs, - 190 ns

Qrr Reverse recovery charge VDD = 60 V - 1.2 µC

IRRM Reverse recovery current

(see Figure 14. Test circuit for inductive
- 13
s ) A

t(
load switching and diode recovery times)

uc
trr Reverse recovery time ISD = 19.5 A, di/dt = 100 A/µs, - 270 ns

od
Qrr Reverse recovery charge VDD = 60 V, TJ = 150 °C - 2.0 µC

Pr
(see Figure 14. Test circuit for inductive
IRRM Reverse recovery current - 15 A
load switching and diode recovery times)

1. Pulse width is limited by safe operating area.

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2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

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DS13218 - Rev 1 page 4/12

 STW23NM60ND
Electrical characteristics (curves)

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance

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Figure 3. Output characteristics
b Figure 4. Transfer characteristics

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AM14794v1
ID ID AM14795v1
(A) (A)

50
VGS=10V

( s ) 50
VDS= 20 V

7V
c t
40

d u 40

30
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30

20
e P 20

10
ol et 5V
10

b s 0
0 5 10 15 20 25 30 VDS(V)
0
0 2 4 6 8 VGS(V)
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Figure 5. Static drain-source on resistance Figure 6. Gate charge vs gate-source voltage
AM01537v1
VGS
(V) VDD=480V
12 ID=19.5A

10

0
0 20 40 60 80 Qg(nC)

DS13218 - Rev 1 page 5/12

 STW23NM60ND
Electrical characteristics (curves)

Figure 8. Normalized gate threshold voltage vs

Figure 7. Capacitance variations
temperature
C AM01538v1
(pF)

10000

Ciss
1000

100
Coss
s )
10 Crss
c t(
d u
1
0.1 1 10 100 VDS(V)
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–100

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Figure 9. Normalized on resistance vs temperature
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Figure 10. Source-drain diode forward characteristics

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b s –100

O Figure 11. Normalized breakdown voltage vs temperature

V(BR)DSS AM09028v1
(norm) ID=1mA
1.10

1.08
1.06

1.04
1.02
1.00
0.98
0.96
0.94
0.92
-50 -25 0 25 50 75 100 TJ (°C)

DS13218 - Rev 1 page 6/12

 STW23NM60ND
Test circuits

3 Test circuits

Figure 12. Test circuit for resistive load switching times Figure 13. Test circuit for gate charge behavior

VDD

12 V 47 kΩ
1 kΩ
100 nF
RL
2200 3.3

VD
+ μF μF VDD
IG= CONST

s )
t(
VGS 100 Ω D.U.T.

RG +

uc
pulse width
VGS D.U.T. 2.7 kΩ
2200 VG
pulse width μF
47 kΩ

o d
1 kΩ

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eP
AM01468v1 AM01469v1

l e t
Figure 14. Test circuit for inductive load switching and
diode recovery times s o
Figure 15. Unclamped inductive load test circuit

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(s
A A A L

t
D VD
fast 100 µH

c
G D.U.T. diode 2200 3.3

u
S B 3.3 1000 + µF µF VDD
B B
µF + µF VDD

d
25 Ω D ID

o
G D.U.T.

P
+

_
RG S

r Vi
pulse width
D.U.T.

et e
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AM01471v1

s
AM01470v1

O b Figure 17. Switching time waveform

Figure 16. Unclamped inductive waveform
ton toff
V(BR)DSS
td(on) tr td(off) tf
VD

90% 90%
IDM

10% VDS 10%

ID 0

VDD VDD VGS 90%

0 10%
AM01472v1
AM01473v1

DS13218 - Rev 1 page 7/12

 STW23NM60ND
Package information

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 TO-247 package information

Figure 18. TO-247 package outline

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0075325_9

DS13218 - Rev 1 page 8/12

 STW23NM60ND
TO-247 package information

Table 7. TO-247 package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0
)
3.40

s
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c 0.40 0.80

uc
D 19.85 20.15

od
E 15.45 15.75

Pr
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70
t e 4.30
L2

o le 18.50
ØP
ØR
3.55
4.50 b s 3.65
5.50
S 5.30
- O 5.50 5.70

( s )
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DS13218 - Rev 1 page 9/12

 STW23NM60ND

Revision history

Table 8. Document revision history

Date Revision Changes

13-Jan-2020 1 First release. Part number previously included in datasheet DS5681.

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DS13218 - Rev 1 page 10/12

 STW23NM60ND
Contents

Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4
)
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
s
4.1 t(
TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
c
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Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
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DS13218 - Rev 1 page 11/12

 STW23NM60ND

IMPORTANT NOTICE – PLEASE READ CAREFULLY

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
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s )
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
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Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.

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ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service
names are the property of their respective owners.

P
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

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© 2020 STMicroelectronics – All rights reserved

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DS13218 - Rev 1 page 12/12