11NM60N
11NM60N
11NM60N
Features
VDSS RDS(on)
Type ID 3
3
(@TJmax) max 2
3
1 1
2
1
Description
This series of devices is designed using the
second generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
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STx11NM60N Electrical ratings
1 Electrical ratings
Thermal resistance
Rthj-case 1.38 5 °C/W
junction-case max
Thermal resistance
Rthj-amb 62.5 100 62.5 °C/W
junction-amb max
Thermal resistance
Rthj-pcb 50 30 °C/W
junction-pcb max
Maximum lead
Tl temperature for soldering 300 °C
purposes
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Electrical characteristics STx11NM60N
2 Electrical characteristics
Drain-source breakdown
V(BR)DSS ID = 1 mA, VGS= 0 600 V
voltage
VDD = 400 V,ID = 5 A,
dv/dt(1) Drain-source voltage slope 45 V/ns
VGS =10 V
Zero gate voltage drain VDS = Max rating, 1 µA
IDSS
current (VGS = 0) VDS=Max rating,Tc=125 °C 10 µA
Gate body leakage current
IGSS VGS = ±20 V ±100 nA
(VDS = 0)
VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 2 3 4 V
Static drain-source on
RDS(on) VGS= 10 V, ID= 5 A 0.37 0.45 Ω
resistance
1. Characteristic value at turn off on inductive load
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
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STx11NM60N Electrical characteristics
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Electrical characteristics STx11NM60N
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
Figure 6. Safe operating area for DPAK, IPAK Figure 7. Thermal impedance for DPAK, IPAK
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STx11NM60N Electrical characteristics
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
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Electrical characteristics STx11NM60N
Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs
vs temperature temperature
Figure 16. Source-drain diode forward Figure 17. Normalized BVDSS vs temperature
characteristics
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STx11NM60N Test circuits
3 Test circuits
Figure 18. Switching times test circuit for Figure 19. Gate charge test circuit
resistive load
Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test
switching and diode recovery times circuit
Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform
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Package mechanical data STx11NM60N
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STx11NM60N Package mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.14 1.70 0.044 0.066
c 0.48 0.70 0.019 0.027
D 15.25 15.75 0.6 0.62
D1 1.27 0.050
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.051
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
∅P 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
11/20
Package mechanical data STx11NM60N
mm. inch
Dim.
Min. Typ Max. Min. Typ. Max.
A 4.40 4.60 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.70 0.017 0.027
F 0.75 1.00 0.030 0.039
F1 1.15 1.50 0.045 0.067
F2 1.15 1.50 0.045 0.067
G 4.95 5.20 0.195 0.204
G1 2.40 2.70 0.094 0.106
H 10 10.40 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.80 10.60 0.385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.90 16.40 0.626 0.645
L7 9 9.30 0.354 0.366
Dia 3 3.2 0.118 0.126
E
A
D
B
L3
L6
L7
F1
Dia
F
G1
G
H
F2
1 2 3
L5
L2 L4
7012510-I
12/20
STx11NM60N Package mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40 4.60 0.173 0.181
A1 0.03 0.23 0.001 0.009
b 0.70 0.93 0.027 0.037
b2 1.14 1.70 0.045 0.067
c 0.45 0.60 0.017 0.024
c2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 7.50 0.295
E 10 10.40 0.394 0.409
E1 8.50 0.334
e 2.54 0.1
e1 4.88 5.28 0.192 0.208
H 15 15.85 0.590 0.624
J1 2.49 2.69 0.099 0.106
L 2.29 2.79 0.090 0.110
L1 1.27 1.40 0.05 0.055
L2 1.30 1.75 0.051 0.069
R 0.4 0.016
V2 0° 8° 0° 8°
0079457 M
13/20
Package mechanical data STx11NM60N
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40 4.60 0.173 0.181
A1 2.40 2.72 0.094 0.107
b 0.61 0.88 0.024 0.034
b1 1.14 1.70 0.044 0.066
c 0.49 0.70 0.019 0.027
c2 1.23 1.32 0.048 0.052
D 8.95 9.35 0.352 0.368
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
E 10 10.40 0.393 0.410
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L2 1.27 1.40 0.050 0.055
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STx11NM60N Package mechanical data
mm.
DIM.
min. typ max.
A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
b 0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
D1 5.10
E 6.40 6.60
E1 4.70
e 2.28
e1 4.40 4.60
H 9.35 10.10
L 1
L1 2.80
L2 0.80
L4 0.60 1
R 0.20
V2 0o 8o
0068772_G
15/20
Package mechanical data STx11NM60N
mm.
DIM.
min. typ max.
A 2.20 2.40
A1 0.90 1.10
b 0.64 0.90
b2 0.95
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
E 6.40 6.60
e 2.28
e1 4.40 4.60
H 16.10
L 9.00 9.40
(L1) 0.80 1.20
L2 0.80
V1 10 o
0068771_H
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STx11NM60N Packaging mechanical data
DPAK FOOTPRINT
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Packaging mechanical data STx11NM60N
D2PAK FOOTPRINT
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STx11NM60N Revision history
6 Revision history
19/20
STx11NM60N
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