Technical Data Sheet: 2N7381 JANSM (3K RAD (Si) ) Jansd (10K RAD (Si) ) Jansr (100K RAD (Si) ) Jansf (300K RAD (Si) )
Technical Data Sheet: 2N7381 JANSM (3K RAD (Si) ) Jansd (10K RAD (Si) ) Jansr (100K RAD (Si) ) Jansf (300K RAD (Si) )
Technical Data Sheet: 2N7381 JANSM (3K RAD (Si) ) Jansd (10K RAD (Si) ) Jansr (100K RAD (Si) ) Jansf (300K RAD (Si) )
DEVICES LEVELS
Note: (1) Derated Linearly by 0.6 W/°C for TC > +25°C TO-257AA
(2) VGS = 12Vdc, ID = 6.0A JANSR2N7381, JANSF2N7381
See Figure 1
PRE-IRRADIATION ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise
noted)
Parameters / Test Conditions Symbol Min. Max. Unit
Drain-Source Breakdown Voltage
V(BR)DSS 200 Vdc
VGS = 0V, ID = 1mAdc
Gate Current
VGS = ±20V, VDS = 0V IGSS1 ±100 nAdc
VGS = ±20V, VDS = 0V, Tj = +125°C IGSS2 ±200
Drain Current
IDSS1 25 µAdc
VGS = 0V, VDS = 160V
IDSS2 0.25 mAdc
VGS = 0V, VDS = 160V, Tj = +125°C
Static Drain-Source On-State Resistance
VGS = 12V, ID = 6.0A pulsed rDS(on)1 0..40 Ω
VGS = 12V, ID = 9.4A pulsed rDS(on)2 0.49 Ω
Tj = +125°C
VGS = 12V, ID = 6.0A pulsed rDS(on)3 0.75 Ω
Diode Forward Voltage
VSD 1.4 Vdc
VGS = 0V, ID = 9.4A pulsed
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
Drain Current
VGS = 0V, VDS = 160V MSR IDSS1
25 µAdc
VGS = 0V, VDS = 160V MSF
50
Static Drain-Source On-State Voltage
VGS = 12V, ID = 6.0A pulsed MSR VDS(on) 2.4 Vdc
VGS = 12V, ID = 6.0A pulsed MSF 3.18
NOTE:
(3) Post-Irradiation Electrical Characteristics apply to devices subjected to Steady State Total Dose Irradiation testing in
accordance with MIL-STD-750 Method 1019. Separate samples are tested for VGS bias (12V), and VDS bias
(160V) conditions.
Heavy Ion testing of the 2N7381 device was completed by similarity of die structure to the 2N7262. The
2N7262 has been characterized at the Texas A&M cyclotron. The following SOA curve has been established
using the elements, LET, range, and Total Energy conditions as shown:
2N7381 (2N7262)
TAMU Ar
LET=8.3
220 Range =192um
200 Total Energy=531MeV
180
TAMU Kr
160 LET=27.8
Range =134um
Drain Bias, V
140
Total Energy=1032MeV
120
100 TAMU Ag
LET=42.2
80 Range =119um
60 Total Energy=1289MeV
40
TAMU Au
20 LET=85.4
0 Range =118um
Total Energy=2247MeV
0 -5 -10 -15 -20 -25
Gate Bias, V
It should be noted that total energy levels are considered to be a factor in SEE characterization. Comparisons
to other datasets should not be based on LET alone. Please consult factory for more information.
Figure 1: Case Outline and Pin Configuration for JANSR2N7381 & JANSF2N7381