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    A Highly Stable 8T SRAM Cell: P.Rama Koteswara Rao and D.Vijaya Kumar

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    This document describes an 8T SRAM cell that provides increased stability and reduced leakage power compared to a 6T SRAM cell. It has two extra transistors that separate the read and write paths to prevent accidental flipping during reads. Simulation results show the 8T cell has higher read static noise margin and lower leakage power than the 6T cell.

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    A Highly Stable 8T SRAM Cell: P.Rama Koteswara Rao and D.Vijaya Kumar

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    112 views6 pages
    This document describes an 8T SRAM cell that provides increased stability and reduced leakage power compared to a 6T SRAM cell. It has two extra transistors that separate the read and write paths to prevent accidental flipping during reads. Simulation results show the 8T cell has higher read static noise margin and lower leakage power than the 6T cell.

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    This document describes an 8T SRAM cell that provides increased stability and reduced leakage power compared to a 6T SRAM cell. It has two extra transistors that separate the read and write paths to prevent accidental flipping during reads. Simulation results show the 8T cell has higher read static noise margin and lower leakage power than the 6T cell.

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    A Highly Stable 8T SRAM Cell: P.Rama Koteswara Rao and D.Vijaya Kumar

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    Rakeshconclave
    This document describes an 8T SRAM cell that provides increased stability and reduced leakage power compared to a 6T SRAM cell. It has two extra transistors that separate the read and write paths to prevent accidental flipping during reads. Simulation results show the 8T cell has higher read static noise margin and lower leakage power than the 6T cell.

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    International Journal of Advances in Science and Technology, Vol. 4, No.

    2, 2012

    A Highly Stable 8T SRAM cell


    P.Rama Koteswara Rao 1 and D.Vijaya Kumar2
    1

    Department of Electronics & Communications, URCE, Teleprolu, AP, India [email protected]

    Department of Electronics & Communications, URCE, Teleprolu, AP, India [email protected]

    Abstract
    This paper describes stability problems in 6T SRAM cell and their solutions with 8T SRAM cell. 8T SRAM with the virtual ground concept has been proposed which increases the cell stability, increases read SNM and reduces leakage power. Comparison of 8T SRAM cell proposed with conventional 6T SRAM cell with respect to leakage power, read SNM are proved by simulation and experimentally using the tool cadence (180nm technology).

    Keywords: Cell stability, Leakage Power, Read Static Noise Margin, Virtual Ground 1. Introduction
    The embedded memories account to 65 percent of the area in modern SoC. The memory area increases with the complexity of SoC and by the year 2018, it is expected to go to 90 percent. Most of the memory is composed of the SRAM cells. With increasing variability in the future CMOS manufacturing processes, the SRAM cell stability, which depends on the balance of transistors, becomes a major concern. As the device dimensions decrease, the SRAM cell becomes more and more susceptible to process variations. The effect of random variations in logic paths can be overcome to a certain extent by placing multiple stages, but in the case of memory, each SRAM cell must function according to the specifications [1]. In addition to the data stability issues, the increasing leakage energy consumption of the embedded memory circuits is also a growing concern. In modern high performance microprocessors, more than 40 percent of the total active mode energy is consumed due to leakage currents [2]. In the conventional six transistor SRAM cell, the read and write operations impose conflicting constraints on the transistors. Due to this any improvement done to enhance the stability for one operation will result in performance degradation in the other operation. The problem of improving the SRAM cell stability is further aggravated by lower supply voltages. As the supply voltage decreases, the threshold voltage variation account for a large fraction of the supply voltage. Many design techniques have been proposed to overcome the variability problems. A higher supply voltage exclusively for the SRAM array apart from the normal supply voltage is one way to enhance the noise margins of the SRAM cell [3]. In this case, the supply voltage of the SRAM cell will not scale with the technology. Further, it may increase if the variability problems become prominent. The supply voltage can be dynamically modulated for read, write and standby operations to achieve the required noise margin [4].These separates the read and write operation from the standby operation. While these techniques provide better noise margins, they add to the complexity of the circuit. Also these techniques may result in increase of dynamic power consumption during the read and write operations. An 8T SRAM cell with two extra transistors and virtual ground has been proposed which is used to separate the read and write current path and avoid accidental cell flipping during read operation. This cell provides significant large SNM during Read operation improves cell stability, reduces leakage power and read power consumption.

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    2. Conventional 6T SRAM cell


    In conventional 6T SRAM, the fundamental stability problem occurs during the read operation. In order to reduce leakage power consumption by reducing worst case VDS ofM5 and M6 pass transistor, pre-charge voltage for bit-lines is kept much lower than the cell supply voltage. When the pass transfer transistors (M5 & M6, Fig 1) are turned on, which pull the 0 logic node to a poor 0 level and 1logic node to a poor 1 logic level, it may lead to flip the cell data.

    Figure1: Schematic diagram of the conventional 6T SRAM cell showing the current flow during read operation

    3. Proposed 8T SRAM Cell


    In the proposed 8T SRAM cell, two extra transistors are used to separate the read and write current path and avoid accidental cell flipping during read operation. This cell provides significant large SNM during Read operation.

    Figure 2: Proposed 8T SRAM cell with virtual ground

    3.1.1 8T Write Operation


    Transistor M5 is turned on by enabling the write_word_line. For writing 1 write_bit is charged to logic 1 then Q charges to logic 1 and Qbar discharges to logic 0.For writing 0 write_bit is charged to logic 0 then Q discharges to logic 0 and Qbar charges to logic 1.

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    Figure 3: Proposed 8T SRAM cell during write operation

    3.1.2 8T Cell Read Operation


    Before read operation starts Read_bit is precharged to zero and then M6 is turned on by enabling the Read_word_line .During Read 0 M8 and M7 are turned ON and OFF respectively. So the Read_bit line starts to charge. Sense amplifier detects 0.22v rise in the Read_bit line and gives output as logical 0. During Read 1 M8 and M7 are turned OFF and ON respectively. So the Read_bit line remains at 0v only. Sense amplifier detects this and gives output as logical 1. Read operation is done by M6, M7 and M8 MOSFETs. The read path doesnt include the nodes Q or Qbar which causes no disturbance to the memory circuit during read operation. Hence the main problem of stability in the conventional cell is avoided in the 8T cell.

    Figure 4: Proposed 8T SRAM cell during read operation 3.1.3 Role of virtual ground Whenever Q is 0 and Read_Word_Line is not enabled M7 causes unnecessary leakage. This can be avoided by connecting M7 to the virtual ground instead of ground. Virtual ground acts as ground when Read_Word_Line is enabled and in other case it provides logical 1. On overall this reduces a considerable amount of leakage power.

    4. Characteristics of Proposed 8T SRAM Cell


    The determination of characteristics of the new SRAM cell and the comparison with the existing architectures are conducted. Cadence was used for circuit level simulation. The target technology chosen was 180nm. Scaled dimensions for the transistors were assumed with a lambda of 90nm. The minimum length and width of a transistor were assumed to 180nm and 240nm respectively. The supply voltage was assumed to be VDD=1.8V. Initially the read static noise margin and the leakage of the SRAM cell are analyzed. Later, process variations are introduced and the variations of these characteristics are presented. The power of the memory architecture is dependent on the application. Hence the best case and worst case for both these characteristics are presented. A memory bank which

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    consists of 128 rows and 8 columns array of proposed 8T SRAM is designed. Another 128*8 conventional 6T SRAM is also designed for comparison.

    4.1 Static Noise Margin


    The static noise margins of the conventional 6T SRAM cells with ratio of 2, 3 and 4, the 8T SRAM cell proposed and the modified SRAM were computed and compared.

    Figure5: Comparison of the static noise margins of various SRAM cells SRAM _6 _2B, SRAM _6_ 3B and SRAM _6_4B represent the conventional 6T SRAM cell with of 2, 3 and 4 respectively. SRAM_8T represents the eight transistor SRAM cell proposed. The 8T SRAM have a separate read mechanism, and hence = 1.

    4.2 Read Static Noise Margin


    Read static noise margin is the absolute value of the smaller point. The read static noise margin of each of the cells and the results are shown. As shown, the read static noise margins of the proposed SRAM cell is almost twice that of the conventional SRAM cell.

    Figure 6: Comparison of the read SNMs of various SRAM cells

    4.3 Leakage Power


    Leakage power of a SRAM cell is the power consumed by the SRAM cell when it is in standby mode. Figure7 shows the comparison of the leakage power of the SRAM cells. Since the transistors of the proposed SRAM cell are sized to minimum, the leakage power is less when compared to the other conventional SRAM cells even though the 8 transistor SRAM cell has an extra path for discharging the read bitline.

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    Figure7: Leakage Power Consumption various SRAM cells

    4.4 Write power


    The write power of the proposed SRAM cell is higher than the other cells. However, it provides more robust design since there exists a constant pull up (for logic 1) or pull down (for logic 0) for the entire duration of the write operation, thus making the write bitline more immune to noise. As the CMOS technology scales down, the reliability of the circuit becomes more important than the power consumption.

    Figure 8: Comparison of write power of SRAM cells

    6. CONCLUSION
    In this paper the stability and leakage power reduction in 8T SRAM cell is shown with the use of virtual ground concept when compared to conventional 6T SRAM cell signal. By designing 8T SRAM cell with the help of virtual ground concept, the read SNM is increased (almost doubled).The cell also supports low power operation. This new asymmetric cell structure is capable of using differential sense technique for high speed read operation. REFERENCES

    [1] L. Chang, R. K. Montoye, Y. Nakamura, K. A. Batson, R. J. Eickemeyer, R.H.Dennard, W. Haensch, and D.Jamsek, An 8t-sram for variability tolerance and low-voltage operation in highperformance caches, IEEE Journal of Solid State Circuits, vol. 43, no. 4, pp. 956963, 2006.

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    [2] G. Sery, S. Borkar, and V. De, Life is cmos: why chase the life after?in Proceedings of the 39th conference on Design automation, 2002, pp. 7883. [3] J. Davis, D. Plass, P. Bunce, Y. Chan, A. Pelella, R. Joshi, A. Chen, W. Huott, T. Knips, P. Patel, K. Lo, and E. Fluhr., A 5.6GHz 64kb dual-read data cache for the power6tm processor, in Digest of Technical Papers. IEEE International Solid-State Circuits Conference, 2006, pp. 25642571. [4] K. Zhang, U. Bhattacharya, Z. Chen, F. Hamzaoglu, D. Murray, N. Vallepalli, Y.Wang, B. Zheng, and M. Bohr, A 3-ghz 70-mb sram in 65-nm cmos technology with integrated column-based dynamic power supply, IEEE Journal of Solid-State Circuits, vol. 41, no. 1, pp. 146151, 2006.

    7. Authors Profile
    Mr. P Rama Koteswara Rao is currently working as Associate Professor in ECE Department, Usha Rama College of Engineering & Technology, Telaprolu, AP, India. He is working towards his PhD. at Andhra University College of Engineering, Visakhapatnam, AP, India. He received his M.Tech from JNTU College of Engg, Anantapur. He has thirteen years of experience in teaching undergraduate students and three years industrial experience. His research interests are in the areas of speech signal processing, embedded systems and Memory Design.

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    Mr D. Vijaya Kumar received his M.Tech degree from Institute of Technology, Banaras Hindu University, Varanasi India in 2010 and B.Tech from Malaviya National Institute of Technology, Jaipur, India. He is a member of IEEE. He is currently working as an Assistant Professor in ECE Department, Usha Rama College of Engineering & Technology, Telaprolu, AP, India. His areas of interests include Solid State Physics, VLSI and Memory Design.

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